The commercialization of lithium niobate on insulator(LNOI) wafer has resulted in significant on-chip photonic integration application owing to its remarkable photonic,acousto-optic,electro-optic,and piezoelectric nat...The commercialization of lithium niobate on insulator(LNOI) wafer has resulted in significant on-chip photonic integration application owing to its remarkable photonic,acousto-optic,electro-optic,and piezoelectric nature.In recent years,a variety of high-performance on-chip LNOI-based photonic devices have been realized.In this study,we developed a 1-mol% erbium-doped lithium niobate crystal and its LNOI on a silicon substrate and fabricated an erbium-doped LNOI microdisk with high quality factor(~1.05×105).C-band laser emission at ~1530 and ~1560 nm(linewidth 0.12 nm) from the high-Q erbium-doped LNOI microdisk was demonstrated with 974-and 1460-nm pumping,with the latter having better thermal stability.This microlaser would play an important role in the photonic integrated circuits of the lithium niobate platform.展开更多
All-optical logic gates including AND, XOR, and NOT gates, as well as a half-adder, are realized based on twodimensional lithium niobate photonic crystal(PhC) circuits with Ph C micro-cavities.The proposed all-optical...All-optical logic gates including AND, XOR, and NOT gates, as well as a half-adder, are realized based on twodimensional lithium niobate photonic crystal(PhC) circuits with Ph C micro-cavities.The proposed all-optical devices have an extinction ratio as high as 23 dB due to the effective all-optical switch function induced by twomissing-hole micro-cavities.These proposed devices can have potential implementation of complex integrated optical functionalities including all-optical computing in a lithium niobate slab or thin film.展开更多
基金supported by the National Key R&D Program of China (Grant Nos. 2019YFB2203500, and 2017YFA0303700)the National Natural Science Foundation of China (Grant No. 91950107)the Foundation for Development of Science and Technology of Shanghai (Grant No. 17JC1400400)。
文摘The commercialization of lithium niobate on insulator(LNOI) wafer has resulted in significant on-chip photonic integration application owing to its remarkable photonic,acousto-optic,electro-optic,and piezoelectric nature.In recent years,a variety of high-performance on-chip LNOI-based photonic devices have been realized.In this study,we developed a 1-mol% erbium-doped lithium niobate crystal and its LNOI on a silicon substrate and fabricated an erbium-doped LNOI microdisk with high quality factor(~1.05×105).C-band laser emission at ~1530 and ~1560 nm(linewidth 0.12 nm) from the high-Q erbium-doped LNOI microdisk was demonstrated with 974-and 1460-nm pumping,with the latter having better thermal stability.This microlaser would play an important role in the photonic integrated circuits of the lithium niobate platform.
基金supported by the National Key R&D Program of China(No.2017YFA0303700)the National Natural Science Foundation of China(NFSC)(No.11574208)
文摘All-optical logic gates including AND, XOR, and NOT gates, as well as a half-adder, are realized based on twodimensional lithium niobate photonic crystal(PhC) circuits with Ph C micro-cavities.The proposed all-optical devices have an extinction ratio as high as 23 dB due to the effective all-optical switch function induced by twomissing-hole micro-cavities.These proposed devices can have potential implementation of complex integrated optical functionalities including all-optical computing in a lithium niobate slab or thin film.
