The thermodynamic state and kinetic process of low-temperature deoxygenation reaction of graphene oxide(GO) have been investigated for better understanding on the reduction mechanism by using Differential Scanning Cal...The thermodynamic state and kinetic process of low-temperature deoxygenation reaction of graphene oxide(GO) have been investigated for better understanding on the reduction mechanism by using Differential Scanning Calorimetry(DSC), Thermogravimetry-Mass Spectrometry(TG-MS), and X-ray Photoelectron Spectroscopy(XPS). It is found that the thermal reduction reaction of GO is exothermic with degassing of CO_2, CO and H_2O. Graphene is thermodynamically more stable than GO. The deoxygenation reaction of GO is kinetically controlled and the activation energy for GO is calculated to be 167 k J/mol(1.73 e V/atom).展开更多
The solid-electrolyte-based memristors have attracted tremendous attention for the next-generation nonvolatile memory for both logic and neuromorphic applications.However,they encounter variability performance challen...The solid-electrolyte-based memristors have attracted tremendous attention for the next-generation nonvolatile memory for both logic and neuromorphic applications.However,they encounter variability performance challenges which originated from the random ionic transport and conductive filaments formation.Evidently,the electrochemical metallized mechanism associated with ion transport has been elucidated.Nonetheless,the failure mechanism caused by ion transport during cycles is rarely reported.Hereafter,the five stages of failure in the Ag/Ag_(10)Ge_(15)Te_(75)/W memristor are elucidated through ex-situ current-voltage measurements combined with in-situ transmission electron microscopy characteristics.Our investigation reveals that the migration and enrichment of Ag ions result in the precipitation of Ag_(2)Te.The formation of Ag_(2)Te hinders the device's ability to maintain its bipolar characteristics and also decreases the resistance value of the high resistance state,thereby reducing the device's switching ratio.The promising results provide important guidance for the future design of structures and the manipulation of ion transport for high-performance memristors.展开更多
基金supported by the National Basic Research Program of China(Grant Nos.2011CB707601and 2009CB623702)the National Natural Science Foundation of China(Grant Nos.51071044+3 种基金60976003and 61006011)China Postdoctoral Science Foundation Funded Pro ject(Grant No.20100481085)Jiangsu Planned Pro jects for Postdoctoral Research Funds(Grant No.1001014B)Open Research Fund of State Key Laboratory of Bioelectronics
文摘The thermodynamic state and kinetic process of low-temperature deoxygenation reaction of graphene oxide(GO) have been investigated for better understanding on the reduction mechanism by using Differential Scanning Calorimetry(DSC), Thermogravimetry-Mass Spectrometry(TG-MS), and X-ray Photoelectron Spectroscopy(XPS). It is found that the thermal reduction reaction of GO is exothermic with degassing of CO_2, CO and H_2O. Graphene is thermodynamically more stable than GO. The deoxygenation reaction of GO is kinetically controlled and the activation energy for GO is calculated to be 167 k J/mol(1.73 e V/atom).
基金supported by Jiangsu Provincial Key Research and Development Program(No.BE2021007-2)the National Natural Science Foundation of China(Nos.12174050 and 12234005)the new cornerstone science foundation and XPLORER PRIZE.
文摘The solid-electrolyte-based memristors have attracted tremendous attention for the next-generation nonvolatile memory for both logic and neuromorphic applications.However,they encounter variability performance challenges which originated from the random ionic transport and conductive filaments formation.Evidently,the electrochemical metallized mechanism associated with ion transport has been elucidated.Nonetheless,the failure mechanism caused by ion transport during cycles is rarely reported.Hereafter,the five stages of failure in the Ag/Ag_(10)Ge_(15)Te_(75)/W memristor are elucidated through ex-situ current-voltage measurements combined with in-situ transmission electron microscopy characteristics.Our investigation reveals that the migration and enrichment of Ag ions result in the precipitation of Ag_(2)Te.The formation of Ag_(2)Te hinders the device's ability to maintain its bipolar characteristics and also decreases the resistance value of the high resistance state,thereby reducing the device's switching ratio.The promising results provide important guidance for the future design of structures and the manipulation of ion transport for high-performance memristors.
