We prepared the isolated micrometer-sized diamond particles without seeding on the substrate in hot filament chemical vapor deposition. The diamond particles with specific crystallographic planes and strong silicon-va...We prepared the isolated micrometer-sized diamond particles without seeding on the substrate in hot filament chemical vapor deposition. The diamond particles with specific crystallographic planes and strong silicon-vacancy(SiV) photoluminescence(PL) have been prepared by adjusting the growth pressure. As the growth pressure increases from 2.5 to 3.5 kPa,the diamond particles transit from composite planes of {100} and {111} to only smooth {111} planes. The {111}-faceted diamond particles present better crystal quality and stronger normalized intensity of SiV PL with a narrower bandwidth of 5 nm. Raman depth profiles show that the SiV centers are more likely to be formed on the near-surface areas of the diamond particles, which have poorer crystal quality and greater lattice stress than the inner areas. Complex lattice stress environment in the near-surface areas broadens the bandwidth of SiV PL peak. These results provide a feasible method to prepare diamond particles with specific crystallographic planes and stronger SiV PL.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.50972129 and 50602039)the International Science Technology Cooperation Program of China(Grant No.2014DFR51160)+3 种基金the National Key Research and Development Program of China(Grant No.2016YFE0133200)European Union’s Horizon 2020 Research and Innovation Staff Exchange(RISE)Scheme(Grant No.734578)One Belt and One Road International Cooperation Project from Key Research and Development Program of Zhejiang Province,China(Grant No.2018C04021)the Natural Science Foundation of Zhejiang Province,China(Grant No.LY18E020013)
文摘We prepared the isolated micrometer-sized diamond particles without seeding on the substrate in hot filament chemical vapor deposition. The diamond particles with specific crystallographic planes and strong silicon-vacancy(SiV) photoluminescence(PL) have been prepared by adjusting the growth pressure. As the growth pressure increases from 2.5 to 3.5 kPa,the diamond particles transit from composite planes of {100} and {111} to only smooth {111} planes. The {111}-faceted diamond particles present better crystal quality and stronger normalized intensity of SiV PL with a narrower bandwidth of 5 nm. Raman depth profiles show that the SiV centers are more likely to be formed on the near-surface areas of the diamond particles, which have poorer crystal quality and greater lattice stress than the inner areas. Complex lattice stress environment in the near-surface areas broadens the bandwidth of SiV PL peak. These results provide a feasible method to prepare diamond particles with specific crystallographic planes and stronger SiV PL.
