Association of overexpression of TIF1γ with colorectal carcinogenesis and advanced colorectal adenocarcinoma

AIM:To determine the expression and clinical significance of transcriptional intermediary factor 1 gamma (TIF1γ),Smad4 and transforming growth factor-beta (TGFβR) across a spectrum representing colorectal cancer (CRC) development.METHODS:Tissue microarrays were prepared from archival paraffin embedded tissue,including 51 colorectal carcinomas,25 tubular adenomas (TA) and 26 HPs,each with matched normal colonic epithelium.Immunohistochemistry was performed using antibodies against TIF1γ,Smad4 and TGFβ RⅡ.The levels of expression were scored semi-quantitatively (score 0-3 or loss and retention for Smad4).RESULTS:Overexpression of TIF1γ was detected in 5/26 (19%) HP;however,it was seen in a significantly higher proportion of neoplasms,15/25 (60%) TAs and 24/51 (47%) CRCs (P<0.05).Normal colonic mucosa,HP,and TAs showed strong Smad4 expression,while its expression was absent in 22/51 (43%) CRCs.Over-expression of TGFβ RⅡ was more commonly seen in neoplasms,13/25 (52%) TAs and 29/51 (57%) CRCs compared to 9/26 (35%) HP (P<0.05).Furthermore,there was a correlation between TIF1γ overexpression and Smad4 loss in CRC (Kendall tau rank correlation value=0.35,P<0.05).The levels of TIF1γ overexpression were significantly higher in stage Ⅲ than in stage Ⅰ and Ⅱ CRC (P<0.05).CONCLUSION:The findings suggest that over-expression of TIF1γ occurs in early stages of colorectal carcinogenesis,is inversely related with Smad4 loss,and may be a prognostic indicator for poor outcome.

Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor

The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively,by means of drain voltage stress and gate bias stress.The results indicate that:(ⅰ) High constant drain voltage stress has only a negligible impact on the device electrical parameters,with a slightly first increase and then decrease in output current;(ⅱ) A negative shift of threshold voltage and increased output current were observed in the device subjected to forward gate bias stress,which is mainly ascribed to the hole-trapping induced by high electric field across the p-GaN/AlGaN interface;(ⅲ) The analyzed device showed an excellent behavior at reverse gate bias stress,with almost unaltered threshold voltage,output current,and gate leakage current,exhibiting a large gate swing in the negative direction.The results are meaningful and valuable in directing the process optimization towards a high voltage and high reliable enhanced AlGaN/GaN high-electron mobility transistor.

From TCM Practice to Classic Texts:The Case of Henry C.Lu’s A Complete Translation of the Yellow Emperor’s Classics of Internal Medicine and the Difficult Classic(Nei-Jing and Nan-Jing)

In memory of Dr.Henry C.Lu,a traditional Chinese medicine(TCM)practitioner,educator and translator,this article provides an overview of his masterpiece A Complete Translation of the Yellow Emperor’s Classics of Internal Medicine and the Difficult Classic(Nei-Jing and Nan-Jing)from the perspectives of book section,translation ideology and translation strategies.We then identify the features of TCM classics translated by overseas TCM practitioners and educators through analyzing exemplary characteristics of this translation.Their translations are often teaching oriented with plain and easy-to-read language,thus making TCM classics practical and applicable in clinic practice.Although these works are found in very few library collections of academic institutions,they received positive comments from readers including foreign TCM practitioners and students.