An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotio...An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 10^(11) cm^(-2),1× 10^(12) cm^(-2), and 5× 10^(12) cm^(-2). DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 10^(12) cm^(-2). Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.展开更多
The performance damage mechanism of InP-based high electron mobility transistors(HEMTs) after proton irradiation has been investigated comprehensively through induced defects.The effects of the defect type, defect ene...The performance damage mechanism of InP-based high electron mobility transistors(HEMTs) after proton irradiation has been investigated comprehensively through induced defects.The effects of the defect type, defect energy level with respect to conduction band ET, and defect concentration on the transfer and output characteristics of the device are discussed based on hydrodynamic model and Shockley–Read–Hall recombination model.The results indicate that only acceptorlike defects have a significant influence on device operation.Meanwhile, as defect energy level ETshifts away from conduction band, the drain current decreases gradually and finally reaches a saturation value with ETabove 0.5 eV.This can be attributed to the fact that at sufficient deep level, acceptor-type defects could not be ionized any more.Additionally,the drain current and transconductance degrade more severely with larger acceptor concentration.These changes of the electrical characteristics with proton radiation could be accounted for by the electron density reduction in the channel region from induced acceptor-like defects.展开更多
This paper proposes a reasonable radiation-resistant composite channel structure for In P HEMTs.The simulation results show that the composite channel structure has excellent electrical properties due to increased mod...This paper proposes a reasonable radiation-resistant composite channel structure for In P HEMTs.The simulation results show that the composite channel structure has excellent electrical properties due to increased modulation doping efficiency and carrier confinement.Moreover,the direct current(DC)and radio frequency(RF)characteristics and their reliability between the single channel structure and the composite channel structure after 75-ke V proton irradiation are compared in detail.The results show that the composite channel structure has excellent radiation tolerance.Mechanism analysis demonstrates that the composite channel structure weakens the carrier removal effect.This phenomenon can account for the increase of native carrier and the decrease of defect capture rate.展开更多
A two-step gate-recess process combining high selective wet-etching and non-selective digital wet-etching techniques has been proposed for InAlAs/InGaAs InP-based high electron mobility transistors (HEMTs). High etc...A two-step gate-recess process combining high selective wet-etching and non-selective digital wet-etching techniques has been proposed for InAlAs/InGaAs InP-based high electron mobility transistors (HEMTs). High etching-selectivity ratio of InGaAs to InA1As material larger than 100 is achieved by using mixture solution of succinic acid and hydrogen peroxide (H202). Selective wet-etching is validated in the gate-recess process of InA1As/InGaAs InP-based HEMTs, which proceeds and auto- matically stops at the InA1As barrier layer. The non-selective digital wet-etching process is developed using a separately controlled oxidation/de-oxidation technique, and during each digital etching cycle 1.2 nm InAIAs material is removed. The two-step gate-recess etching technique has been successfully incorporated into device fabrication. Digital wet-etching is repeated for two cycles with about 3 nm InAIAs barrier layer being etched off. InP-based HEMTs have demonstrated superior extrinsic trans- conductance and RF characteristics to devices fabricated during only the selective gate-recess etching process because of the smaller gate to channel distance.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11775191,61404115,61434006,and 11475256)the Promotion Funding for Excellent Young Backbone Teacher of Henan Province,China(Grant No.2019GGJS017)。
文摘An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 10^(11) cm^(-2),1× 10^(12) cm^(-2), and 5× 10^(12) cm^(-2). DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 10^(12) cm^(-2). Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11775191,61404115,61434006,and 11475256)the Development Fund for Outstanding Young Teachers in Zhengzhou University of China(Grant No.1521317004)the Doctoral Student Overseas Study Program of Zhengzhou University,China
文摘The performance damage mechanism of InP-based high electron mobility transistors(HEMTs) after proton irradiation has been investigated comprehensively through induced defects.The effects of the defect type, defect energy level with respect to conduction band ET, and defect concentration on the transfer and output characteristics of the device are discussed based on hydrodynamic model and Shockley–Read–Hall recombination model.The results indicate that only acceptorlike defects have a significant influence on device operation.Meanwhile, as defect energy level ETshifts away from conduction band, the drain current decreases gradually and finally reaches a saturation value with ETabove 0.5 eV.This can be attributed to the fact that at sufficient deep level, acceptor-type defects could not be ionized any more.Additionally,the drain current and transconductance degrade more severely with larger acceptor concentration.These changes of the electrical characteristics with proton radiation could be accounted for by the electron density reduction in the channel region from induced acceptor-like defects.
基金the National Natural Science Foundation of China(Grant No.11775191)the Natural Science Foundation of Henan Province,China(Grant No.202300410379)+2 种基金the Promotion Funding for Excellent Young Backbone Teacher of Henan Province,China(Grant No.2019GGJS017)Key Technologies Research and Development Program of Henan Province,China(Grant No.202102210321)the Promotion Project for Physics Discipline in Zhengzhou University,China(Grant No.2018WLTJ01)。
文摘This paper proposes a reasonable radiation-resistant composite channel structure for In P HEMTs.The simulation results show that the composite channel structure has excellent electrical properties due to increased modulation doping efficiency and carrier confinement.Moreover,the direct current(DC)and radio frequency(RF)characteristics and their reliability between the single channel structure and the composite channel structure after 75-ke V proton irradiation are compared in detail.The results show that the composite channel structure has excellent radiation tolerance.Mechanism analysis demonstrates that the composite channel structure weakens the carrier removal effect.This phenomenon can account for the increase of native carrier and the decrease of defect capture rate.
基金Project supported by the National Natural Science Foundation of China (Nos. 61404115 and 61434006), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province, China (No. 18IRTSTHN016), and the Development Fund for Outstanding Young Teachers in Zhengzhou University, China (No. 1521317004)
文摘A two-step gate-recess process combining high selective wet-etching and non-selective digital wet-etching techniques has been proposed for InAlAs/InGaAs InP-based high electron mobility transistors (HEMTs). High etching-selectivity ratio of InGaAs to InA1As material larger than 100 is achieved by using mixture solution of succinic acid and hydrogen peroxide (H202). Selective wet-etching is validated in the gate-recess process of InA1As/InGaAs InP-based HEMTs, which proceeds and auto- matically stops at the InA1As barrier layer. The non-selective digital wet-etching process is developed using a separately controlled oxidation/de-oxidation technique, and during each digital etching cycle 1.2 nm InAIAs material is removed. The two-step gate-recess etching technique has been successfully incorporated into device fabrication. Digital wet-etching is repeated for two cycles with about 3 nm InAIAs barrier layer being etched off. InP-based HEMTs have demonstrated superior extrinsic trans- conductance and RF characteristics to devices fabricated during only the selective gate-recess etching process because of the smaller gate to channel distance.