The effect of SiO2 doping on the sintering behavior, microstructure, and dielectric properties of BaTiO3-based ceramics has been investigated. Silica was added to the BaTiO3-based powder prepared by the solid state me...The effect of SiO2 doping on the sintering behavior, microstructure, and dielectric properties of BaTiO3-based ceramics has been investigated. Silica was added to the BaTiO3-based powder prepared by the solid state method with 0.075mol%, 0.15mol%, and 0.3mol%, respectively. The SiO2-doped BaTiO3-based ceramic with high density and uniform grain size were obtained, which were sintered in reducing atmosphere. A scanning electron microscope, X-ray diffraction, and LCR meter were used to determine the microstructure as well as the dielectric properties. SiO2 can form a liquid phase belonging to the ternary system of BaO-TiO2-SiO2, leading to the formation of BaTiO3 ceramics with high density at a lower sintering temperature. The SiO2-doped BaTiO3-based ceramics can be sintered to a theoretical density higher than 95% at 1220℃ with a soaking time of 2 h. The dielectric constants of the sample with 0.15mol% SiO2 addition sintered at 1220℃ is about 9000. Doping with a small amount of silica can improve the sintering and dielectric properties of BaTiO3-based ceramics.展开更多
The effects of microwave sintering on the sintering behaviour, microstructure and dielectric properties of Bi2O3-doped (Ba0.6Sr0.4)(Ti0.94Cu0.06)O3 (BSTC) ceramics were investigated. The microstructure and dielectric ...The effects of microwave sintering on the sintering behaviour, microstructure and dielectric properties of Bi2O3-doped (Ba0.6Sr0.4)(Ti0.94Cu0.06)O3 (BSTC) ceramics were investigated. The microstructure and dielectric properties of a BSTC ceramic were also studied given different amounts of Bi2O3 doping. Microwave heating with sintering temperatures below 1000°C significantly improves the densification of Bi2O3-doped BSTC ceramics. The BSTC ceramic with 1 wt% Bi2O3 addition sintered at 950°C in air for 30 min exhibited dielectric properties of er = 3756, dielectric loss of tanδ = 7 × 10-3 and bulk density > 96% of theoretical density.展开更多
基金supported by the Found No.NSC96-2218-E-020-004-005
文摘The effect of SiO2 doping on the sintering behavior, microstructure, and dielectric properties of BaTiO3-based ceramics has been investigated. Silica was added to the BaTiO3-based powder prepared by the solid state method with 0.075mol%, 0.15mol%, and 0.3mol%, respectively. The SiO2-doped BaTiO3-based ceramic with high density and uniform grain size were obtained, which were sintered in reducing atmosphere. A scanning electron microscope, X-ray diffraction, and LCR meter were used to determine the microstructure as well as the dielectric properties. SiO2 can form a liquid phase belonging to the ternary system of BaO-TiO2-SiO2, leading to the formation of BaTiO3 ceramics with high density at a lower sintering temperature. The SiO2-doped BaTiO3-based ceramics can be sintered to a theoretical density higher than 95% at 1220℃ with a soaking time of 2 h. The dielectric constants of the sample with 0.15mol% SiO2 addition sintered at 1220℃ is about 9000. Doping with a small amount of silica can improve the sintering and dielectric properties of BaTiO3-based ceramics.
文摘The effects of microwave sintering on the sintering behaviour, microstructure and dielectric properties of Bi2O3-doped (Ba0.6Sr0.4)(Ti0.94Cu0.06)O3 (BSTC) ceramics were investigated. The microstructure and dielectric properties of a BSTC ceramic were also studied given different amounts of Bi2O3 doping. Microwave heating with sintering temperatures below 1000°C significantly improves the densification of Bi2O3-doped BSTC ceramics. The BSTC ceramic with 1 wt% Bi2O3 addition sintered at 950°C in air for 30 min exhibited dielectric properties of er = 3756, dielectric loss of tanδ = 7 × 10-3 and bulk density > 96% of theoretical density.
