Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman...Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence （PL） spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E^g and Alg modes of WS2 and MoS2 vary linearly with tem- perature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the band- gap shrinkage of bulk semiconductor.展开更多
基金supported by the National Basic Research Program of China (2015CB932403)the National Natural Science Foundation of China (11674012, 61422501, 11374023, 11304054 and 61521004)+2 种基金Beijing Natural Science Foundation (L140007)Foundation for the Author of National Excellent Doctoral Dissertation of China (201420)National Program for Support of Top-notch Young Professionals
文摘Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence （PL） spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E^g and Alg modes of WS2 and MoS2 vary linearly with tem- perature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the band- gap shrinkage of bulk semiconductor.
