β-GaOis an ultra-wide band-gap semiconductor with promising applications in UV optical detectors,Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of...β-GaOis an ultra-wide band-gap semiconductor with promising applications in UV optical detectors,Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of large β-GaOcrystals is undeveloped and many properties of this material have not been discovered yet. In this work, 2-inch β-GaOsingle crystals were grown by using an edge-defined film-fed growth method. The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum. The electrical properties and optical properties of both the unintentionally doped and Si-doped β-GaOcrystals were investigated systematically.展开更多
Φ55×15 mm~2 CdS bulk single crystal with high infrared transmittance was grown by physical vapor transport. The single crystal has a consistent structure from top to bottom, which was confirmed by X-ray diffract...Φ55×15 mm~2 CdS bulk single crystal with high infrared transmittance was grown by physical vapor transport. The single crystal has a consistent structure from top to bottom, which was confirmed by X-ray diffraction. The(002) full-width at half-maximum of the X-ray diffraction was measured to be 60.00 arcsec, indicating a good quality of the structure. Hall mobility, specific resistivity, and carrier concentration for the top and bottom of the crystal were observed as well. Transmittance for the CdS single crystal was measured to be higher than 70% from 2.5 to 4.5 μm, making the single crystal an important candidate for infrared window materials. Furthermore,the absorption mechanism of the CdS single crystal was analyzed.展开更多
文摘β-GaOis an ultra-wide band-gap semiconductor with promising applications in UV optical detectors,Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of large β-GaOcrystals is undeveloped and many properties of this material have not been discovered yet. In this work, 2-inch β-GaOsingle crystals were grown by using an edge-defined film-fed growth method. The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum. The electrical properties and optical properties of both the unintentionally doped and Si-doped β-GaOcrystals were investigated systematically.
基金Project supported by the National Natural Science Foundation of China(No.51702297)
文摘Φ55×15 mm~2 CdS bulk single crystal with high infrared transmittance was grown by physical vapor transport. The single crystal has a consistent structure from top to bottom, which was confirmed by X-ray diffraction. The(002) full-width at half-maximum of the X-ray diffraction was measured to be 60.00 arcsec, indicating a good quality of the structure. Hall mobility, specific resistivity, and carrier concentration for the top and bottom of the crystal were observed as well. Transmittance for the CdS single crystal was measured to be higher than 70% from 2.5 to 4.5 μm, making the single crystal an important candidate for infrared window materials. Furthermore,the absorption mechanism of the CdS single crystal was analyzed.
