Ligand Exchange of Colloidal ZnO Nanocrystals from the High Temperature and Nonaqueous Approach

Colloidal zinc oxide(ZnO) nanocrystals generated from the high temperature and nonaqueous approache are attractive for use in solution-processed electrical and optoelectronic devices. However, the asprepared colloidal ZnO nanocrystals by this approach are generally capped by ligands with long alkyl-chains,which is disadvantage for solution-processed devices due to hindering charge transport. Here we demonstrate an effective ligand exchange process for the colloidal ZnO nanocrystals from the high temperature and nonaqueous approach by using n-butylamine. The ligand exchange process was carefully characterized. The thin films based on colloidal ZnO nanocrystals after ligand exchange exhibited dramatically enhanced UV photoconductivity.

Anisotropic emission of orientation-controlled mixed-dimensional perovskites for light-emitting devices

Perovskite light-emitting diodes(PeLEDs)are attracting increasing attention owing to their impressive efficiencies and high luminance across the full visible light range.Further improvement of the external quantum efficiency(EQE)of planar PeLEDs is limited by the light out-coupling efficiency.Introducing perovskite emitters with directional emission in PeLEDs is an effective way to improve light extraction.Here,we report that it is possible to achieve directional emission in mixed-dimensional perovskites by controlling the orientation of the emissive center in the film.Multiple characterization methods suggest that our mixed-dimensional perovskite film shows highly orientated transition dipole moments(TDMs)with the horizontal ratio of over 88%,substantially higher than that of the isotropic emitters.The horizontally dominated TDMs lead to PeLEDs with exceptional high light out-coupling efficiency of over 32%,enabling a high EQE of 18.2%.

Green light-emitting diodes based on hybrid perovskite films with mixed cesium and methylammonium cations

我们报导高质量的 C 0.4 麻省 0.6 PbBr 3 有在进 perovskite 晶体的 C + 的介绍之上的将近完整的表面范围和好排放性质的薄电影。C 0.4 麻省 0.6 PbBr 3 薄电影在轻射出的二极管作为放射性的层被使用。~ 的最大的外部量效率 2.0% 为这些绿射出的设备被完成。

An important step towards commercialization of quantum-dot light-emitting diode displays

Colloidal quantum dots(QDs)are a unique class of emissive materials with size-tunable emission wavelengths,saturated emission colors,near-unity luminance efficiency,inherent photo-and thermal-stability,and excellent solution processability.Display based on quantum-dot light-emitting diodes(QLED)may combine the superior properties of QDs,the benefits of solution-based fabrication techniques,and the advantages of self-emission devices,which promises an unprecedented generation of cost-effective,large-area,energysaving,wide-color-gamut,ultra-thin and flexible displays.

Quantum-dot light-emitting diodes with Fermi-level pinning at the hole-injection/hole-transporting interfaces

Quantum-dot light-emitting diodes(QLEDs)are multilayer electroluminescent devices promising for next-generation display and solid-state-lighting technologies.In the state-of-the-art QLEDs,hole-injection layers(HILs)with high work functions are generally used to achieve efficient hole injection.In these devices,Fermi-level pinning,a phenomenon often observed in heterojunctions involving organic semiconductors,can take place in the hole-injection/hole-transporting interfaces.However,an in-depth understanding of the impacts of Fermi-level pinning at the hole-injection/hole-transporting interfaces on the operation and performance of QLEDs is still lacking.Here,we develop a set of NiOx HILs with controlled work functions of 5.2–5.9 eV to investigate QLEDs with Fermi-level pinning at the hole-injection/hole-transporting interfaces.The results show that despite that Fermi-level pinning induces identical apparent hole-injection barriers,the red QLEDs using HILs with higher work functions show improved efficiency roll-off and better operational stability.Remarkably,the devices using the NiOx HILs with a work function of 5.9 eV demonstrate a peak external quantum efficiency of~18.0%and a long T95 operational lifetime of 8,800 h at 1,000 cd·m^(−2),representing the best-performing QLEDs with inorganic HILs.Our work provides a key design principle for future developments of the hole-injection/hole-transporting interfaces of QLEDs.

On the accurate characterization of quantum-dot light-emitting diodes for display applications

Quantum dot light-emitting diodes(QLEDs)are a class of high-performance solution-processed electroluminescent(EL)devices highly attractive for next-generation display applications.Despite the encouraging advances in the mechanism investigation,material chemistry,and device engineering of QLEDs,the lack of standard protocols for the characterization of QLEDs may cause inaccurate measurements of device parameters and invalid comparison of different devices.Here,we report a comprehensive study on the characterizations of QLEDs using various methods.We show that the emission non-uniformity across the active area,nonLambertian angular distributions of EL intensity,and discrepancies in the adopted spectral luminous efficiency functions could introduce significant errors in the device efficiency.Larger errors in the operational-lifetime measurements may arise from the inaccurate determination of the initial luminance and inconsistent methods for analyzing the luminance-decay curves.Finally,we suggest a set of recommended practices and a checklist for device characterizations,aiming to help the researchers in the QLED field to achieve accurate and reliable measurements.