In this paper, a new principle for an adaptive line driver using Fuzzy logic is presented. This type of line driver can adapt its output impedance and gain, automatically to the applied load using a fuzzy logic contro...In this paper, a new principle for an adaptive line driver using Fuzzy logic is presented. This type of line driver can adapt its output impedance and gain, automatically to the applied load using a fuzzy logic controller (FLC). This results in automatically corrected output impedance for different cables with terminations. Also, the line driver output impedance and gain become insensitive to process and line variations. As an example, a line driver for ADSL application has been designed. The circuit operates from a 3.3 v in a 0.35 um standard CMOS technology. The power consumption of FLC is about 1 mW. The circuit dissipates 106 mW and exhibits a -62 dB THD for a 3.2-Vpp signal at 5 MHz across a 75 ohms Load. It has a relatively high -3 dB bandwidth (240 MHz) with good phase margin of about 67 degrees in a 10 pF load capacitor.展开更多
In this paper, we present a solution to the ultra low voltage inverter by adding a keeper transistor in order to make the semi-floating-gate more stable and to reduce the current dissipation. Moreover, we also present...In this paper, we present a solution to the ultra low voltage inverter by adding a keeper transistor in order to make the semi-floating-gate more stable and to reduce the current dissipation. Moreover, we also present a differential ULV inverter and elaborate on the reliability and fault tolerance of the gate. The differential ULV gate compared to both a former ULV gate and standard CMOS are given. The results are obtained through Monte-Carlo simulations.展开更多
In this paper, novel ultra low voltage (ULV) dual-rail NOR gates are presented which use the semi-floating-gate (SFG) structure to speed up the logic circuit. Higher speed in the lower supply voltages and robustness a...In this paper, novel ultra low voltage (ULV) dual-rail NOR gates are presented which use the semi-floating-gate (SFG) structure to speed up the logic circuit. Higher speed in the lower supply voltages and robustness against the input signal delay variations are the main advantages of the proposed gates in comparison to the previously reported domino dual-rail NOR gates. The simulation results in a typical TSMC 90 nm CMOS technology show that the proposed NOR gate is more than 20 times faster than conventional dual-rail NOR gate.展开更多
文摘In this paper, a new principle for an adaptive line driver using Fuzzy logic is presented. This type of line driver can adapt its output impedance and gain, automatically to the applied load using a fuzzy logic controller (FLC). This results in automatically corrected output impedance for different cables with terminations. Also, the line driver output impedance and gain become insensitive to process and line variations. As an example, a line driver for ADSL application has been designed. The circuit operates from a 3.3 v in a 0.35 um standard CMOS technology. The power consumption of FLC is about 1 mW. The circuit dissipates 106 mW and exhibits a -62 dB THD for a 3.2-Vpp signal at 5 MHz across a 75 ohms Load. It has a relatively high -3 dB bandwidth (240 MHz) with good phase margin of about 67 degrees in a 10 pF load capacitor.
文摘In this paper, we present a solution to the ultra low voltage inverter by adding a keeper transistor in order to make the semi-floating-gate more stable and to reduce the current dissipation. Moreover, we also present a differential ULV inverter and elaborate on the reliability and fault tolerance of the gate. The differential ULV gate compared to both a former ULV gate and standard CMOS are given. The results are obtained through Monte-Carlo simulations.
文摘In this paper, novel ultra low voltage (ULV) dual-rail NOR gates are presented which use the semi-floating-gate (SFG) structure to speed up the logic circuit. Higher speed in the lower supply voltages and robustness against the input signal delay variations are the main advantages of the proposed gates in comparison to the previously reported domino dual-rail NOR gates. The simulation results in a typical TSMC 90 nm CMOS technology show that the proposed NOR gate is more than 20 times faster than conventional dual-rail NOR gate.
