Narrowed Si_(0.7)Ge_(0.3)channel FinFET with subthreshold swing of64 mV/Dec using cyclic self-limited oxidation and removal process

A narrowed Si_(0.7)Ge_(0.3)channel fin field-effect transistor(FinFET)device is demonstrated in detail by using an accuratecyclic wet treatment process.The Si_(0.7)Ge_(0.3)fin/per side of 0.63 nm in thickness can be accurately removed in each cycleby utilizing a self-limited oxidation with 40%HNO_(3)solution in 40 s and oxidation removal can be achieved with 1%HFsolution in 10 s.As a result,after the dummy gate removal,the fin width of Si_(0.7)Ge_(0.3)can be narrowed from 20 nm to 8 nmby utilizing 10 cycles of this wet treatment process.Compared with the conventional Si_(0.7)Ge_(0.3)FinFET under a similarprocess,the narrowed Si_(0.7)Ge_(0.3)channel FinFET can realize a strong gate control capability by using this newly developedwet treatment process,because its subthreshold slope can be reduced by 24%,improving from 87 mV/dec to 64 mV/dec.

Baicalin protects neonatal rat brains against hypoxicischemic injury by upregulating glutamate transporter 1 via the phosphoinositide 3-kinase/protein kinase B signaling pathway

Baicalin is a flavonoid compound extracted from Scutellaria baicalensis root.Recent evidence indicates that baicalin is neuroprotective in models of ischemic stroke.Here,we investigate the neuroprotective effect of baicalin in a neonatal rat model of hypoxic-ischemic encephalopathy.Seven-day-old pups underwent left common carotid artery ligation followed by hypoxia（8% oxygen at 37°C） for 2 hours,before being injected with baicalin（120 mg/kg intraperitoneally） and examined 24 hours later.Baicalin effectively reduced cerebral infarct volume and neuronal loss,inhibited apoptosis,and upregulated the expression of p-Akt and glutamate transporter 1.Intracerebroventricular injection of the phosphoinositide 3-kinase/protein kinase B（PI3 K/Akt） inhibitor LY294002 30 minutes before injury blocked the effect of baicalin on p-Akt and glutamate transporter 1,and weakened the associated neuroprotective effect.Our findings provide the first evidence,to our knowledge that baicalin can protect neonatal rat brains against hypoxic-ischemic injury by upregulating glutamate transporter 1 via the PI3 K/Akt signaling pathway.

High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing

A high crystalline quality of SiGe fin with an Si-rich composition area using the replacement fin processing is systematically demonstrated in this paper.The fin replacement process based on a standard FinFET process is developed.A width of less than 20-nm SiGe fin without obvious defect impact both in the direction across the fin and in the direction along the fin is verified by using the high angle annular dark field scanning transmission electron microscopy and the scanning moiréfringe imaging technique.Moreover,the SiGe composition is inhomogenous in the width of the fin.This is induced by the formation of 111 facets.Due to the atomic density of the 111 facets being higher,the epitaxial growth in the direction perpendicular to these facets is slower than in the direction perpendicular to 001.The Ge incorporation is then higher on the 111 facets than on the 001 facets.So,an Si-rich area is observed in the central area and on the bottom of SiGe fin.

Key technologies for dual high-k and dual metal gate integration

The key technologies for the dual high-k and dual metal gate, such as the electrical optimization of metal insert poly-Si stack structure, the separating of high-k and metal gate of n/pMOS in different regions of the wafer, and the synchronous etching of n/pMOS gate stack, are successfully developed. First, reasonable flat-band voltage and equivalent oxide thickness of pMOS MIPS structure are obtained by further optimizing the HfSiAlON dielectric through incorporating more Al-O dipole at interface between HfSiAlON and bottom SiOx. Then, the separating of high-k and metal gate for n/pMOS is achieved by SC1（NH4OH：H2O2：H2O = 1 ： 1 ： 5） and DHF-based solution for the selective removing of n MOS TaN and Hf Si ON and by BCl3-based plasma and DHF-based solution for the selective removing of pMOS TaN/Mo and HfSiAlON.After that, the synchronous etching of n/pMOS gate stack is developed by utilizing optimized BCl3/SF6/O2/Ar plasma to obtain a vertical profile for TaN and TaN/Mo and by utilizing BCl3/Ar plasma combined with DHF-based solution to achieve high selectivity to Si substrate. Finally, good electrical characteristics of CMOS devices, obtained by utilizing these new developed technologies, further confirm that they are practicable technologies for DHDMG integration.

XOR spin logic operated by unipolar current based on field-free spin-orbit torque switching induced by a lateral interface

Spin logics have emerged as a promising avenue for the development of logic-in-memory architectures.In particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential for low-power stateful logic circuits in the next generation.In this study,we successfully obtained the XOR logic gate by utilizing a spin-orbit torque device with a lateral interface,which was created by local ion implantation in the Ta/Pt/Co/Ta Hall device exhibiting perpendicular magnetic anisotropy.The angle of the lateral interface is set at 45°relative to the current direction,leading to the competition between symmetry breaking and current-driven Néel-type domain wall motion.Consequently,the field-free magnetic switching reversed is realized by the same sign of current amplitude at this interface.Based on this field-free magnetic switching behavior,we successfully proposed an XOR logic gate that could be implemented using only a single spin-orbit torque Hall device.This study provides a potentially viable approach toward efficient spin logics and in-memory computing architectures.