Crystal morphologies and resistivity of polysilicon trap-rich layers of two-generation trap-rich silicon-on-insulator（TR-SOI） substrates are studied. It is found that the resistivity of the trap-rich layer of genera...Crystal morphologies and resistivity of polysilicon trap-rich layers of two-generation trap-rich silicon-on-insulator（TR-SOI） substrates are studied. It is found that the resistivity of the trap-rich layer of generation 2（TR-G2）is higher than that of generation 1（TR-G1）, although the crystal morphologies of the trap rich layers are the same. In addition, the rf performance of two-generation TR-SOI substrates is investigated by coplanar waveguide lines and inductors. The results show that both the rf loss and the second harmonic distortion of TR-G2 are smaller than those of TR-G1. These results can be attributed to the higher resistivity values of both the trap-rich layer and the high-resistivity silicon（HR-Si） substrate of TR-G2. Moreover, the rf performance of the TR-SOI substrate with thicker buried oxide is slightly better. The second harmonics of various TR-SOI substrates are simulated and evaluated with the harmonic quality factor model as well. It can be predicted that the TR-SOI substrate will see further improvement in rf performance if the resistivities of both the trap-rich layer and HR-Si substrate increase.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61376021 and 61674159the Program of Shanghai Academic/Technology Research Leader under Grant No 17XD1424500
文摘Crystal morphologies and resistivity of polysilicon trap-rich layers of two-generation trap-rich silicon-on-insulator（TR-SOI） substrates are studied. It is found that the resistivity of the trap-rich layer of generation 2（TR-G2）is higher than that of generation 1（TR-G1）, although the crystal morphologies of the trap rich layers are the same. In addition, the rf performance of two-generation TR-SOI substrates is investigated by coplanar waveguide lines and inductors. The results show that both the rf loss and the second harmonic distortion of TR-G2 are smaller than those of TR-G1. These results can be attributed to the higher resistivity values of both the trap-rich layer and the high-resistivity silicon（HR-Si） substrate of TR-G2. Moreover, the rf performance of the TR-SOI substrate with thicker buried oxide is slightly better. The second harmonics of various TR-SOI substrates are simulated and evaluated with the harmonic quality factor model as well. It can be predicted that the TR-SOI substrate will see further improvement in rf performance if the resistivities of both the trap-rich layer and HR-Si substrate increase.
