This study first reviews the numerical manifold method(NMM)which possesses some advantages over the traditional limit equilibrium methods(LEMs)in calculating the factors of safety(Fs)of the slopes.Then,with regard to ...This study first reviews the numerical manifold method(NMM)which possesses some advantages over the traditional limit equilibrium methods(LEMs)in calculating the factors of safety(Fs)of the slopes.Then,with regard to a trial slip surface(TSS),associated stress fields reproduced by NMM as well as the enhanced limit equilibrium method are combined to compute Fs.In order to search for the potential critical slip surface(CSS),the MAX-MIN ant colony optimization algorithm(MMACOA),one of the best performing algorithms for some optimization problems,is adopted.Procedures to obtain Fs in conjunction with the potential CSS are described.Finally,the proposed numerical model and traditional methods are compared with stability analysis of three typical slopes.The numerical results show that Fs and CSSs of the slopes can be accurately calculated with the proposed model.展开更多
The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this study.The electrical properties of both P-GaN and N-GaN,separated fro...The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this study.The electrical properties of both P-GaN and N-GaN,separated from power devices,were gauged for fundamental analysis.It was found that the electrical properties of P-GaN were improved as a consequence of the disruption of the Mg-H bond induced by high-dose x-ray irradiation,as indicated by the Hall and circular transmission line model.Specifically,under a 100-Mrad(Si)x-ray dose,the specific contact resistance pc of P-GaN decreased by 30%,and the hole carrier concentration increased significantly.Additionally,the atom displacement damage effect of a 2-MeV proton of 1×10^(13)p/cm^(2)led to a significant degradation of the electrical properties of P-GaN,while those of N-GaN remained unchanged.P-GaN was found to be more sensitive to irradiation than N-GaN thin film.The effectiveness of x-ray irradiation in enhancing the electrical properties of P-GaN thin films was demonstrated in this study.展开更多
Zn O-Bi_2O_3 varistorfilms doped with two kinds of rare earth element oxides(Lu_2O_3,Yb_2O_3)were prepared by the sol-gel method.The effects of Lu_2O_3/Yb__2O__3 doping on microstructure and electrical characteristics...Zn O-Bi_2O_3 varistorfilms doped with two kinds of rare earth element oxides(Lu_2O_3,Yb_2O_3)were prepared by the sol-gel method.The effects of Lu_2O_3/Yb__2O__3 doping on microstructure and electrical characteristics of ZnO-Bi_2O_3 varistor films were investigat-展开更多
Ga_(2)O_(3)-based avalanche photodetectors(APDs) have gained increasing attention because of their excellent photoelectric conversion capability in the UV solar-blind region. Integrating high-quality epitaxial Ga_(2)O...Ga_(2)O_(3)-based avalanche photodetectors(APDs) have gained increasing attention because of their excellent photoelectric conversion capability in the UV solar-blind region. Integrating high-quality epitaxial Ga_(2)O_(3) with p-type semiconductor remains an open challenge associated with the integration difficulty on alleviating its defects and dislocations. Herein,we construct an APD consisting of epitaxial β-Ga_(2)O_(3)/La_(0.8)Ca_(0.2)MnO_(3) heterostructure. The pn junction APDs exhibit a high responsivity of 568 A/W as well as an enhanced avalanche gain of up to 3.0 × 10~5 at a reverse bias voltage of 37.9 V. The integration capability demonstrated in this work provides exciting opportunities for further development of high-performance Ga_(2)O_(3)-based electronics and optoelectronics.展开更多
Bipolar disorder(BD)is a debilitating psychiatric mood dis-order affecting approximately 1%-3%of the population worldwide(Merikangas,2007).Bipolar disorder is characterized by recurrent episodes of depression,hypomani...Bipolar disorder(BD)is a debilitating psychiatric mood dis-order affecting approximately 1%-3%of the population worldwide(Merikangas,2007).Bipolar disorder is characterized by recurrent episodes of depression,hypomania,mania,or mixed states,and it has a poor outcome,with high rates of relapse,lingering residual symptoms,cognitive impairment,and functional impairment(Moreno et al.,2007)Although various etiopathological hypotheses concerning the disease have been reported,the pathophysiology underlying BD remains poody understood(Gawryluk and Young,2011).展开更多
基金This study is supported by the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2020327)the National Natural Science Foundation of China(Grant No.51609240).
文摘This study first reviews the numerical manifold method(NMM)which possesses some advantages over the traditional limit equilibrium methods(LEMs)in calculating the factors of safety(Fs)of the slopes.Then,with regard to a trial slip surface(TSS),associated stress fields reproduced by NMM as well as the enhanced limit equilibrium method are combined to compute Fs.In order to search for the potential critical slip surface(CSS),the MAX-MIN ant colony optimization algorithm(MMACOA),one of the best performing algorithms for some optimization problems,is adopted.Procedures to obtain Fs in conjunction with the potential CSS are described.Finally,the proposed numerical model and traditional methods are compared with stability analysis of three typical slopes.The numerical results show that Fs and CSSs of the slopes can be accurately calculated with the proposed model.
文摘The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this study.The electrical properties of both P-GaN and N-GaN,separated from power devices,were gauged for fundamental analysis.It was found that the electrical properties of P-GaN were improved as a consequence of the disruption of the Mg-H bond induced by high-dose x-ray irradiation,as indicated by the Hall and circular transmission line model.Specifically,under a 100-Mrad(Si)x-ray dose,the specific contact resistance pc of P-GaN decreased by 30%,and the hole carrier concentration increased significantly.Additionally,the atom displacement damage effect of a 2-MeV proton of 1×10^(13)p/cm^(2)led to a significant degradation of the electrical properties of P-GaN,while those of N-GaN remained unchanged.P-GaN was found to be more sensitive to irradiation than N-GaN thin film.The effectiveness of x-ray irradiation in enhancing the electrical properties of P-GaN thin films was demonstrated in this study.
文摘Zn O-Bi_2O_3 varistorfilms doped with two kinds of rare earth element oxides(Lu_2O_3,Yb_2O_3)were prepared by the sol-gel method.The effects of Lu_2O_3/Yb__2O__3 doping on microstructure and electrical characteristics of ZnO-Bi_2O_3 varistor films were investigat-
基金supported by the National Natural Science Foundation of China (Nos. 12074044, 11874230, 52233014, and 12274243)the Fund of State Key Laboratory of Information Photonics and Optical Communications (No. IPOC2021ZT05)the Fundamental Research Funds for the Central Universities (BUPT)。
文摘Ga_(2)O_(3)-based avalanche photodetectors(APDs) have gained increasing attention because of their excellent photoelectric conversion capability in the UV solar-blind region. Integrating high-quality epitaxial Ga_(2)O_(3) with p-type semiconductor remains an open challenge associated with the integration difficulty on alleviating its defects and dislocations. Herein,we construct an APD consisting of epitaxial β-Ga_(2)O_(3)/La_(0.8)Ca_(0.2)MnO_(3) heterostructure. The pn junction APDs exhibit a high responsivity of 568 A/W as well as an enhanced avalanche gain of up to 3.0 × 10~5 at a reverse bias voltage of 37.9 V. The integration capability demonstrated in this work provides exciting opportunities for further development of high-performance Ga_(2)O_(3)-based electronics and optoelectronics.
文摘Bipolar disorder(BD)is a debilitating psychiatric mood dis-order affecting approximately 1%-3%of the population worldwide(Merikangas,2007).Bipolar disorder is characterized by recurrent episodes of depression,hypomania,mania,or mixed states,and it has a poor outcome,with high rates of relapse,lingering residual symptoms,cognitive impairment,and functional impairment(Moreno et al.,2007)Although various etiopathological hypotheses concerning the disease have been reported,the pathophysiology underlying BD remains poody understood(Gawryluk and Young,2011).
