Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth ...Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adatoms is realized, suppressing 3D island growth patterns prevalent in(100) β-Ga_(2)O_(3) films and optimizing the surface morphology with [010] oriented stripe features. The slightly Si-doped β-Ga_(2)O_(3) film shows smooth and flat surface morphology with a root-mean-square roughness of 1.3 nm. Rocking curves of the(400) diffraction peak also demonstrate the high crystal quality of the Si-doped films. According to the capacitance–voltage characteristics, the effective net doping concentrations of the films are 5.41 × 10~(15) – 1.74 × 10~(20) cm~(-3). Hall measurements demonstrate a high electron mobility value of 51cm~2/(V·s), corresponding to a carrier concentration of 7.19 × 10~(18) cm~(-3) and a high activation efficiency of up to 61.5%. Transmission line model(TLM) measurement shows excellent Ohmic contacts and a low specific contact resistance of 1.29 × 10~(-4) Ω·cm~2 for the Si-doped film, which is comparable to the Si-implanted film with a concentration of 5.0 × 10~(19) cm~(-3), confirming the effective Si doing in the MOCVD epitaxy.展开更多
Power electronic devices are of great importance in modern society.After decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion losses.As ...Power electronic devices are of great importance in modern society.After decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion losses.As the demand for electronic components with high efficiency dramatically increasing,new materials are needed for power device fabrication.Betaphase gallium oxide,an ultra-wide bandgap semiconductor,has been considered as a promising candidate,and variousβ-Ga_(2)O_(3)power devices with high breakdown voltages have been demonstrated.However,the realization of enhancement-mode(E-mode)β-Ga_(2)O_(3)field-effect transistors(FETs)is still challenging,which is a critical problem for a myriad of power electronic applications.Recently,researchers have made some progress on E-modeβ-Ga_(2)O_(3)FETs via various methods,and several novel structures have been fabricated.This article gives a review of the material growth,devices and properties of these E-modeβ-Ga_(2)O_(3)FETs.The key challenges and future directions in E-modeβ-Ga_(2)O_(3)FETs are also discussed.展开更多
The use of two inhibitors of Mek1/2 and Gsk3β(2i)promotes the generation of mouse diploid and haploid embryonic stem cells(ESCs)from the inner cell mass of biparental and uniparental blastocysts,respectively.However,...The use of two inhibitors of Mek1/2 and Gsk3β(2i)promotes the generation of mouse diploid and haploid embryonic stem cells(ESCs)from the inner cell mass of biparental and uniparental blastocysts,respectively.However,a system enabling long-term maintenance of imprints in ESCs has proven challenging.Here,we report that the use of a two-step a2i(alternative two inhibitors of Src and Gsk3β,TSa2i)derivation/culture protocol results in the establishment of androgenetic haploid ESCs(AG-haESCs)with stable DNA methylation at paternal DMRs(differentially DNA methylated regions)up to passage 60 that can efficiently support generating mice upon oocyte injection.We also show coexistence of H3K9me3 marks and ZFP57 bindings with intact DMR methylations.Furthermore,we demonstrate that TSa2itreated AG-haESCs are a heterogeneous cell population regarding paternal DMR methylation.Strikingly,AGhaESCs with late passages display increased paternal-DMR methylations and improved developmental potential compared to early-passage cells,in part through the enhanced proliferation of H19-DMR hypermethylated cells.Together,we establish AG-haESCs that can longterm maintain paternal imprints.展开更多
基金supported in part by the National Basic Research Program of China (Grant No. 2021YFB3600202)Key Laboratory Construction Project of Nanchang (Grant No. 2020-NCZDSY-008)Suzhou Science and Technology Foundation (Grant No. SYG202027)。
文摘Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adatoms is realized, suppressing 3D island growth patterns prevalent in(100) β-Ga_(2)O_(3) films and optimizing the surface morphology with [010] oriented stripe features. The slightly Si-doped β-Ga_(2)O_(3) film shows smooth and flat surface morphology with a root-mean-square roughness of 1.3 nm. Rocking curves of the(400) diffraction peak also demonstrate the high crystal quality of the Si-doped films. According to the capacitance–voltage characteristics, the effective net doping concentrations of the films are 5.41 × 10~(15) – 1.74 × 10~(20) cm~(-3). Hall measurements demonstrate a high electron mobility value of 51cm~2/(V·s), corresponding to a carrier concentration of 7.19 × 10~(18) cm~(-3) and a high activation efficiency of up to 61.5%. Transmission line model(TLM) measurement shows excellent Ohmic contacts and a low specific contact resistance of 1.29 × 10~(-4) Ω·cm~2 for the Si-doped film, which is comparable to the Si-implanted film with a concentration of 5.0 × 10~(19) cm~(-3), confirming the effective Si doing in the MOCVD epitaxy.
基金supported in part by the National Basic Research Program of China(Grant No.2021YFB3600202)Key Laboratory Construction Project of Nanchang(Grant No.2020-NCZDSY-008)the Suzhou Science and Technology Foundation(Grant No.SYG202027)。
文摘Power electronic devices are of great importance in modern society.After decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion losses.As the demand for electronic components with high efficiency dramatically increasing,new materials are needed for power device fabrication.Betaphase gallium oxide,an ultra-wide bandgap semiconductor,has been considered as a promising candidate,and variousβ-Ga_(2)O_(3)power devices with high breakdown voltages have been demonstrated.However,the realization of enhancement-mode(E-mode)β-Ga_(2)O_(3)field-effect transistors(FETs)is still challenging,which is a critical problem for a myriad of power electronic applications.Recently,researchers have made some progress on E-modeβ-Ga_(2)O_(3)FETs via various methods,and several novel structures have been fabricated.This article gives a review of the material growth,devices and properties of these E-modeβ-Ga_(2)O_(3)FETs.The key challenges and future directions in E-modeβ-Ga_(2)O_(3)FETs are also discussed.
基金This study was supported by Genome Tagging Project and grants from the Chinese Academy of Sciences,the National Key Research and Development Program of Chinathe National Natural Science Foundation of China(2019YFA0109900,2020YFA0509000,XDB19010204,QYZDJ-SSW-SMC023,Facility-based Open Research Program,31821004,32030029,and 31730062).
文摘The use of two inhibitors of Mek1/2 and Gsk3β(2i)promotes the generation of mouse diploid and haploid embryonic stem cells(ESCs)from the inner cell mass of biparental and uniparental blastocysts,respectively.However,a system enabling long-term maintenance of imprints in ESCs has proven challenging.Here,we report that the use of a two-step a2i(alternative two inhibitors of Src and Gsk3β,TSa2i)derivation/culture protocol results in the establishment of androgenetic haploid ESCs(AG-haESCs)with stable DNA methylation at paternal DMRs(differentially DNA methylated regions)up to passage 60 that can efficiently support generating mice upon oocyte injection.We also show coexistence of H3K9me3 marks and ZFP57 bindings with intact DMR methylations.Furthermore,we demonstrate that TSa2itreated AG-haESCs are a heterogeneous cell population regarding paternal DMR methylation.Strikingly,AGhaESCs with late passages display increased paternal-DMR methylations and improved developmental potential compared to early-passage cells,in part through the enhanced proliferation of H19-DMR hypermethylated cells.Together,we establish AG-haESCs that can longterm maintain paternal imprints.
