On the relationship between imprint and reliability in Hf_(0.5)Zr_(0.5)O_(2) based ferroelectric random access memory

The detrimental effect of imprint,which can cause misreading problem,has hindered the application of ferroelectric HfO_(2).In this work,we present results of a comprehensive reliability evaluation of Hf_(0.5)Zr_(0.5)O_(2)-based ferroelectric random access memory.The influence of imprint on the retention and endurance is demonstrated.Furthermore,a solution in circuity is pro-posed to effectively solve the misreading problem caused by imprint.

Implementation of sub-100 nm vertical channel-all-around(CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for the next generation dynamic random access memory(DRAM) application. In this work, thermal atomic layer deposition(TALD) indium gallium zinc oxide(IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition(ALD) process. In addition, thin-film transistors(TFTs) with vertical channel-all-around(CAA) structure were realized to explore the influence of different IGZO films as channel layers on the performance of transistors. Our research demonstrates that TALD is crucial for high density integration technology, and the proposed vertical IGZO CAA-TFT provides a feasible path to break through the technical problems for the continuous scale of electronic equipment.

Recent advances of amorphous-phase-engineered metal-based catalysts for boosted electrocatalysis

Amorphous metal-based catalysts(AMCs)have sparked intense research interests in the field of electrocatalysis elicited by their hallmark features such as unlimited volume and morphology,manipulated electronic structures,enriched defects,and unsaturated surface atom coordination.Nevertheless,the manipulation of the amorphous phase in metal-based catalysts is so far impractical,and thus their electrocatalytic mechanism yet remains ambiguous.In this review,the latest advances in AMCs are systematically reviewed,covering amorphous-phase engineering strategy,structure manipulation,and amorphization of various material categories for electrocatalysis.Specifically,a series of applications of AMCs in electrocatalysis for the oxygen reduction reaction(ORR),hydrogen evolution reaction(HER),and oxygen evolution reaction(OER)are summarized based on the classification criteria of substances.Finally,we put forward current challenges that have not yet been clarified in the field of AMCs,and propose possible solutions,particularly from the perspective of the evolution of electron microscopy.It is expected to promote the understanding of the amorphization-catalysis relationship and provide a guideline for designing high-performance electrocatalysts.