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Electrocatalytic stability of two-dimensional materials
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作者 Huijie Zhu Youchao Liu +3 位作者 yongsen wu Yushan He Yang Cao Sheng Hu 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2024年第10期302-320,I0006,共20页
In electrocatalysis,two-dimensional(2D)materials have attracted extensive interests due to their unique electronic structure and physical properties.In recent years,many efforts have been devoted to improving the cata... In electrocatalysis,two-dimensional(2D)materials have attracted extensive interests due to their unique electronic structure and physical properties.In recent years,many efforts have been devoted to improving the catalytic activity of 2D materials.However,the stability of 2D materials under catalytic conditions,as a critical issue,requires better understanding for any practical applications.This review summarizes recent progress in electrocatalytic stability of 2D materials,including four intrinsic factors that affect the stability of 2D materials:1.Weak interactions between 2D catalyst and substrate;2,delamination of 2D catalyst layers;3.metastable phase of 2D materials;4.chemistry and environmental instability of 2D materials.Meanwhile,some corresponding solutions are summarized for each factor.In addition,this review proposes potential routes for developing 2D catalytic materials with both high activity and stability. 展开更多
关键词 2D materials ELECTROCATALYST STABILITY
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由原子薄横向异质结构建的可调谐肖特基二极管 被引量:1
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作者 卢香超 王伟 +5 位作者 朱慧洁 吴永森 鲁艺珍 邵功磊 刘松 曹阳 《Science China Materials》 SCIE EI CAS CSCD 2023年第11期4419-4426,共8页
本研究利用一步化学气相沉积技术制备了Sn_(x)Mo_(1−x)S_(2)/MoS_(2)横向异质结高性能二极管.通过选择性掺杂Sn原子到单层MoS_(2)的边缘,形成了与MoS_(2)相同晶格常数的Sn_(x)Mo_(1−x)S_(2).在边缘的Sn_(x)Mo_(1−x)S_(2)和内部的MoS_(2... 本研究利用一步化学气相沉积技术制备了Sn_(x)Mo_(1−x)S_(2)/MoS_(2)横向异质结高性能二极管.通过选择性掺杂Sn原子到单层MoS_(2)的边缘,形成了与MoS_(2)相同晶格常数的Sn_(x)Mo_(1−x)S_(2).在边缘的Sn_(x)Mo_(1−x)S_(2)和内部的MoS_(2)上分别沉积铬/金电极,形成肖特基势垒,其中势垒高度不同导致载流子仅在一个方向上传输.通过控制掺杂浓度和栅极电压,可实现MoS_(2)和Sn_(x)Mo_(1−x)S_(2)之间费米能级的对齐调节,实现了可调整的整流比,最高达到104.令人印象深刻的是,该二极管还表现出优异的光伏特性,该器件在λ=400 nm处实现了40%的外量子效率值.此外,我们在无外部偏压条件下实现了自供电光电探测,该异质结二极管在400和650 nm波长处的响应率分别为0.12和0.16 A W^(-1).对应的探测率分别是4.9×10^(10)和6.4×10^(10)Jones.可调的掺杂浓度为进一步创造高效器件提供了可能.这种合成二维侧向二极管的策略丰富了异质结二极管的材料多样性,并为开发新型电子和光电器件提供了新的平台. 展开更多
关键词 heterojunction diode controllable doping tunable rectification ratio one-step chemical vapor deposition photo-voltaic effect
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