Solar-blind ultraviolet(UV)photodetectors based on p-organic/n-Ga_(2)O_(3) hybrid heterojunctions have attracted extensive attention recently.Herein,the multifunctional solar-blind photodetector based on p-type poly[N...Solar-blind ultraviolet(UV)photodetectors based on p-organic/n-Ga_(2)O_(3) hybrid heterojunctions have attracted extensive attention recently.Herein,the multifunctional solar-blind photodetector based on p-type poly[N-90-heptadecanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)](PCDTBT)/n-type amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))is fabricated and investigated,which can work in the phototransistor mode coupling with self-powered mode.With the introduction of PCDTBT,the dark current of such the a-Ga_(2)O_(3)-based photodetector is decreased to 0.48 pA.Meanwhile,the photoresponse parameters of the a-Ga_(2)O_(3)-based photodetector in the phototransistor mode to solar-blind UV light are further increased,that is,responsivity(R),photo-detectivity(D*),and external quantum efficiency(EQE)enhanced to 187 A W^(-1),1.3×10^(16) Jones and 9.1×10^(4)% under the weak light intensity of 11μW cm^(-2),respectively.Thanks to the formation of the built-in field in the p-PCDTBT/n-Ga_(2)O_(3) type-Ⅱ heterojunction,the PCDTBT/Ga_(2)O_(3) multifunctional photodetector shows self-powered behavior.The responsivity of p-PCDTBT/n-Ga_(2)O_(3) multifunctional photodetector is 57.5 mA W^(-1) at zero bias.Such multifunctional p-n hybrid heterojunction-based photodetectors set the stage for realizing high-performance amorphous Ga_(2)O_(3) heterojunction-based photodetectors.展开更多
基金National Key Research and Development Program of China,Grant/Award Numbers:2021YFA0715600,2021YFA0717700National Natural Science Foundation of China,Grant/Award Numbers:52192610,62274127,62304163,62374128+5 种基金State Key Laboratory of Infrared Physics,Grant/Award Number:SITP-NLIST-ZD-2023-03Songshan Lake Materials Laboratory,Grant/Award Number:2023SLABFN02Wuhu and Xidian University special fund for industry-university-research cooperation,Grant/Award Number:XWYCXY-012021004China Postdoctoral Science Foundation,Grant/Award Number:2023TQ0255Fundamental Research Funds for the Central UniversitiesInnovation Fund of Xidian University。
文摘Solar-blind ultraviolet(UV)photodetectors based on p-organic/n-Ga_(2)O_(3) hybrid heterojunctions have attracted extensive attention recently.Herein,the multifunctional solar-blind photodetector based on p-type poly[N-90-heptadecanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)](PCDTBT)/n-type amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))is fabricated and investigated,which can work in the phototransistor mode coupling with self-powered mode.With the introduction of PCDTBT,the dark current of such the a-Ga_(2)O_(3)-based photodetector is decreased to 0.48 pA.Meanwhile,the photoresponse parameters of the a-Ga_(2)O_(3)-based photodetector in the phototransistor mode to solar-blind UV light are further increased,that is,responsivity(R),photo-detectivity(D*),and external quantum efficiency(EQE)enhanced to 187 A W^(-1),1.3×10^(16) Jones and 9.1×10^(4)% under the weak light intensity of 11μW cm^(-2),respectively.Thanks to the formation of the built-in field in the p-PCDTBT/n-Ga_(2)O_(3) type-Ⅱ heterojunction,the PCDTBT/Ga_(2)O_(3) multifunctional photodetector shows self-powered behavior.The responsivity of p-PCDTBT/n-Ga_(2)O_(3) multifunctional photodetector is 57.5 mA W^(-1) at zero bias.Such multifunctional p-n hybrid heterojunction-based photodetectors set the stage for realizing high-performance amorphous Ga_(2)O_(3) heterojunction-based photodetectors.
