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Publisher Correction:Bayesian optimization with experimental failure for high-throughput materials growth
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作者 Yuki K.Wakabayashi Takuma Otsuka +3 位作者 yoshiharu krockenberger Hiroshi Sawada Yoshitaka Taniyasu Hideki Yamamoto 《npj Computational Materials》 SCIE EI CSCD 2022年第1期1755-1755,共1页
The original version of this Article contained an error in CODE AVAILABILITY,in which description of URL for the hyperlink is incorrect.In the corrected version,“https://github.com/XXXX/”is replaced by“https://gith... The original version of this Article contained an error in CODE AVAILABILITY,in which description of URL for the hyperlink is incorrect.In the corrected version,“https://github.com/XXXX/”is replaced by“https://github.com/nttcslab/floor-padding-BO.”This has been corrected in the PDF and HTML versions of the Article. 展开更多
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Bayesian optimization with experimental failure for high-throughput materials growth
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作者 Yuki K.Wakabayashi Takuma Otsuka +3 位作者 yoshiharu krockenberger Hiroshi Sawada Yoshitaka Taniyasu Hideki Yamamoto 《npj Computational Materials》 SCIE EI CSCD 2022年第1期1746-1754,共9页
A crucial problem in achieving innovative high-throughput materials growth with machine learning,such as Bayesian optimization(BO),and automation techniques has been a lack of an appropriate way to handle missing data... A crucial problem in achieving innovative high-throughput materials growth with machine learning,such as Bayesian optimization(BO),and automation techniques has been a lack of an appropriate way to handle missing data due to experimental failures.Here,we propose a BO algorithm that complements the missing data in optimizing materials growth parameters.The proposed method provides a flexible optimization algorithm that searches a wide multi-dimensional parameter space.We demonstrate the effectiveness of the method with simulated data as well as in its implementation for actual materials growth,namely machine-learning-assisted molecular beam epitaxy(ML-MBE)of SrRuO_(3),which is widely used as a metallic electrode in oxide electronics.Through the exploitation and exploration in a wide three-dimensional parameter space,while complementing the missing data,we attained tensile-strained SrRuO3 film with a high residual resistivity ratio of 80.1,the highest among tensile-strained SrRuO3 films ever reported,in only 35 MBE growth runs. 展开更多
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