Measurements of argon metastable density using the tunable diode laser absorption spectroscopy in Ar and Ar/O2

Densities of Ar metastable states 1s5 and 1s3 are measured by using the tunable diode laser absorption spectroscopy（TDLAS） in Ar and Ar/O2 mixture dual-frequency capacitively coupled plasma（DF-CCP）. We investigate the effects of high-frequency（HF, 60 MHz） power, low-frequency（LF, 2 MHz） power, and working pressure on the density of Ar metastable states for three different gas components（0%, 5%, and 10% oxygen mixed in argon）. The dependence of Ar metastable state density on the oxygen content is also studied at different working pressures. It is found that densities of Ar metastable states in discharges with different gas components exhibit different behaviors as HF power increases. With the increase of HF power, the metastable density increases rapidly at the initial stage, and then tends to be saturated at a higher HF power. With a small fraction（5% or 10%） of oxygen added in argon plasma, a similar change of the Ar metastable density with HF power can be observed, but the metastable density is saturated at a higher HF power than in the pure argon discharge. In the DF-CCP, the metastable density is found to be higher than in a single frequency discharge, and has weak dependence on LF power. As working pressure increases, the metastable state density first increases and then decreases,and the pressure value, at which the density maximum occurs, decreases with oxygen content increasing. Besides, adding a small fraction of oxygen into argon plasma will significantly dwindle the metastable state density as a result of quenching loss by oxygen molecules.

Fundamental study towards a better understanding of low pressure radio-frequency plasmas for industrial applications

Two classic radio-frequency(RF) plasmas, i.e., the capacitively and the inductively coupled plasmas(CCP and ICP),are widely employed in material processing, e.g., etching and thin film deposition, etc. Since RF plasmas are usually operated in particular circumstances, e.g., low pressures(m Torr-Torr), high-frequency electric field(13.56 MHz-200 MHz),reactive feedstock gases, diverse reactor configurations, etc., a variety of physical phenomena, e.g., electron resonance heating, discharge mode transitions, striated structures, standing wave effects, etc., arise. These physical effects could significantly influence plasma-based material processing. Therefore, understanding the fundamental processes of RF plasma is not only of fundamental interest, but also of practical significance for the improvement of the performance of the plasma sources. In this article, we review the major progresses that have been achieved in the fundamental study on the RF plasmas,and the topics include 1) electron heating mechanism, 2) plasma operation mode, 3) pulse modulated plasma, and 4) electromagnetic effects. These topics cover the typical issues in RF plasma field, ranging from fundamental to application.

Time-resolved radial uniformity of pulse-modulated inductively coupled O_(2)/Ar plasmas

Time-resolved radial uniformity of pulse-modulated inductively coupled O_(2)/Ar plasma has been investigated by means of a Langmuir probe as well as an optical probe in this paper. The radial uniformity of plasma has been discussed through analyzing the nonuniformity factor β(calculated by the measured n_e, lower β means higher plasma radial uniformity). The results show that during the active-glow period, the radial distribution of ne exhibits an almost flat profile at the beginning phase, but it converts into a parabola-like profile during the steady state. The consequent evolution for β is that when the power is turned on, it declines to a minimum at first, and then it increases to a maximum, after that, it decays until it keeps constant. This phenomenon can be explained by the fact that the ionization gradually becomes stronger at the plasma center and meanwhile the rebuilt electric field(plasma potential and ambipolar potential) will confine the electrons at the plasma center as well. Besides, the mean electron energy( <ε>_(on)) at the pulse beginning decreases with the increasing duty cycle. This will postpone the plasma ignition after the power is turned on. This phenomenon has been verified by the emission intensity of Ar(λ = 750.4 nm). During the after-glow period, it is interesting to find that the electrons have a large depletion rate at the plasma center. Consequently, ne forms a hollow distribution in the radial direction at the late stage of after-glow. Therefore, β exhibits a maximum at the same time. This can be attributed to the formation of negative oxygen ion(O^(-)) at the plasma center when the power has been turned off.

Numerical investigation of radio-frequency negative hydrogen ion sources by a three-dimensional fluid model

A three-dimensional fluid model is developed to investigate the radio-frequency inductively coupled H2 plasma in a reactor with a rectangular expansion chamber and a cylindrical driver chamber,for neutral beam injection system in CFETR.In this model,the electron effective collision frequency and the ion mobility at high E-fields are employed,for accurate simulation of discharges at low pressures(0.3 Pa-2 Pa)and high powers(40 kW-100 kW).The results indicate that when the high E-field ion mobility is taken into account,the electron density is about four times higher than the value in the low E-field case.In addition,the influences of the magnetic field,pressure and power on the electron density and electron temperature are demonstrated.It is found that the electron density and electron temperature in the xz-plane along permanent magnet side become much more asymmetric when magnetic field enhances.However,the plasma parameters in the yz-plane without permanent magnet side are symmetric no matter the magnetic field is applied or not.Besides,the maximum of the electron density first increases and then decreases with magnetic field,while the electron temperature at the bottom of the expansion region first decreases and then almost keeps constant.As the pressure increases from 0.3 Pa to 2 Pa,the electron density becomes higher,with the maximum moving upwards to the driver region,and the symmetry of the electron temperature in the xz-plane becomes much better.As power increases,the electron density rises,whereas the spatial distribution is similar.It can be summarized that the magnetic field and gas pressure have great influence on the symmetry of the plasma parameters,while the power only has little effect.

Phase shift effects of radio-frequency bias on ion energy distribution in continuous wave and pulse modulated inductively coupled plasmas

A retarding field energy analyzer（RFEA） is used to measure the time-averaged ion energy distributions（IEDs） on the substrate in both continuous wave（CW） and synchronous pulse modulated radio-frequency（RF） inductively coupled Ar plasmas（ICPs）.The effects of the phase shift θ between the RF bias voltage and the RF source on the IED is investigated under various discharge conditions.It is found that as θ increases from 0 to π,the IED moves towards the low-energy side,and its energy width becomes narrower.In order to figure out the physical mechanism,the voltage waveforms on the substrate are also measured.The results show that as θ increases from 0 to π,the amplitude of the voltage waveform decreases and,meanwhile,the average sheath potential decreases as well.Specifically,the potential drop in the sheath on the substrate exhibits a maximum value at the same phase（i.e.,θ = 0） and a minimum value at the opposite phase（i.e.,θ = π）.Therefore,when ions traverse across the sheath region above the substrate,they obtain less energies at lower sheath potential drop,leading to lower ion energy.Besides,as θ increases from π to 2π,the IEDs and their energy widths change reversely.

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Planar radio frequency inductively coupled plasmas（ICP） are employed for low-voltage ion implantation processes,with capacitive pulse biasing of the substrate for modulation of the ion energy. In this work, a two-dimensional（2D） selfconsistent fluid model has been employed to investigate the influence of the pulsed bias power on the nitrogen plasmas for various bias voltages and pulse frequencies. The results indicate that the plasma density as well as the inductive power density increase significantly when the bias voltage varies from 0 V to-4000 V, due to the heating of the capacitive field caused by the bias power. The N＋fraction increases rapidly to a maximum at the beginning of the power-on time, and then it decreases and reaches the steady state at the end of the glow period. Moreover, it increases with the bias voltage during the power-on time, whereas the N2-＋ fraction exhibits a reverse behavior. When the pulse frequency increases to 25 kHz and40 kHz, the plasma steady state cannot be obtained, and a rapid decrease of the ion density at the substrate surface at the beginning of the glow period is observed.

Measurement of electronegativity during the E to H mode transition in a radio frequency inductively coupled Ar/O2 plasma

This paper presents the evolution of the electronegativity with the applied power during the E to H mode transition in a radio frequency(rf)inductively coupled plasma(ICP)in a mixture of Ar and O2.The densities of the negative ion and the electron,as well as their ratio,i.e.,the electronegativity,are measured as a function of the applied power by laser photo-detachment combined with a microwave resonance probe,under different pressures and O2 contents.Meanwhile,the optical emission intensities at Ar 750.4 nm and O 844.6 nm are monitored via a spectrograph.It was found that by increasing the applied power,the electron density and the optical emission intensity show a similar trench,i.e.,they increase abruptly at a threshold power,suggesting that the E to H mode transition occurs.With the increase of the pressure,the negative ion density presents opposite trends in the E-mode and the H-mode,which is related to the difference of the electron density and energy for the two modes.The emission intensities of Ar 750.4 nm and O 844.6 nm monotonously decrease with increasing the pressure or the O2 content,indicating that the density of high-energy electrons,which can excite atoms,is monotonically decreased.This leads to an increase of the negative ion density in the H-mode with increasing the pressure.Besides,as the applied power is increased,the electronegativity shows an abrupt drop during the E-to H-mode transition.

Spatio-temporal measurements of overshoot phenomenon in pulsed inductively coupled discharge

Pulse inductively coupled plasma has been widely used in the microelectronics industry,but the existence of overshoot phenomenon may affect the uniformity of plasma and generate high-energy ions,which could damage the chip.The overshoot phenomenon at various spatial locations in pulsed inductively coupled Ar and Ar/CF_(4) discharges is studied in this work.The electron density,effective electron temperature,relative light intensity,and electron energy probability function(EEPF) are measured by using a time-resolved Langmuir probe and an optical probe,as a function of axial and radial locations.At the initial stage of pulse,both electron density and relative light intensity exhibit overshoot phenomenon,i.e.,they first increase to a peak value and then decrease to a convergent value.The overshoot phenomenon gradually decays,when the probe moves away from the coils.Meanwhile,a delay appears in the variation of the electron densities,and the effective electron temperature decreases,which may be related to the reduced strength of electric field at a distance,and the consequent fewer high-energy electrons,inducing limited ionization and excitation rate.The overshoot phenomenon gradually disappears and the electron density decreases,when the probe moves away from reactor centre.In Ar/CF_(4) discharge,the overshoot phenomenon of electron density is weaker than that in the Ar discharge,and the plasma reaches a steady density within a much shorter time,which is probably due to the more ionization channels and lower ionization thresholds in the Ar/CF_(4) plasma.

Effect of radio frequency bias on plasma characteristics of inductively coupled argon discharge based on fluid simulations

t A fluid model is employed to investigate the effect of radio frequency bias on the behavior of an argon inductively coupled plasma(ICP).In particular,the effects of ICP source power,single-frequency bias power,and dual-frequency bias power on the characteristics of ICP are simulated at a fixed pressure of 30 mTorr(1 Torr=1.33322×102 Pa).When the bias frequency is fixed at 27.12 MHz,the two-dimensional(2D)plasma density profile is significantly affected by the bias power at low ICP source power(e.g.,50 W),whereas it is weakly affected by the bias power at higher ICP source power(e.g.,100 W).When dual-frequency(27.12 MHz/2.26 MHz)bias is applied and the sum of bias powers is fixed at 500 W,a pronounced increase in the maximum argon ion density is observed with the increase of the bias power ratio in the absence of ICP source power.As the ratio of 27.12-MHz/2.26-MHz bias power decreases from 500 W/0 W to 0 W/500 W with the ICP source power fixed at 50 W,the plasma density profiles smoothly shifts from edge-high to center-high,and the effect of bias power on the plasma distribution becomes weaker with the bias power ratio decreasing.Besides,the axial ion flux at the substrate surface is characterized by a maximum at the edge of the substrate.When the ICP source power is higher,the 2D plasma density profiles,as well as the spatiotemporal and radial distributions of ion flux at the substrate surface are characterized by a peak in the reactor center,and the distributions of plasma parameters are negligibly affected by the dual-frequency bias power ratio.