Tin(Sn^(2+))-based halide perovskites have been developed as the most prom-ising alternatives to their toxic Pb-based counterparts in optoelectronic devices.However,the facile tin vacancy formation and easy oxidizatio...Tin(Sn^(2+))-based halide perovskites have been developed as the most prom-ising alternatives to their toxic Pb-based counterparts in optoelectronic devices.However,the facile tin vacancy formation and easy oxidization characteristics make Sn^(2+)-based perovskites highly p-doped with excessive hole concentrations,which significantly hinder their applications.Herein,we demonstrate a potent hole inhibitor of antimony fluoride(SbF_(3)),which possesses a higher hole-suppression capability than conventional tin fluo-ride(SnF_(2)).A small amount of SbF_(3) allows a wide range of hole-density modulation with no or less SnF_(2) addition,thus mitigating the negative effects of using only SnF_(2).A SnF_(2)/SbF_(3) co-additive approach was further developed to achieve high-performance Sn 2+perovskite thin-film transis-tors operated in the enhancement mode with a five-fold enhancement of the field-effect mobility and improved operational stability compared to using only SnF_(2).We expect that the SbF 3 hole suppressor and co-additive approach can provide opportunities for the development of high-efficiency Sn^(2+)-perovskite optoelectronic devices.展开更多
基金This study was supported by the Ministry of Science and ICT through the National Research Foundation,funded by the Korean government(NRF-2021R1A2C3005401,2020M3F3A2A01085792,2020R1A4A1019455,2020M3D1A 1110548)Samsung Display Corporation.
文摘Tin(Sn^(2+))-based halide perovskites have been developed as the most prom-ising alternatives to their toxic Pb-based counterparts in optoelectronic devices.However,the facile tin vacancy formation and easy oxidization characteristics make Sn^(2+)-based perovskites highly p-doped with excessive hole concentrations,which significantly hinder their applications.Herein,we demonstrate a potent hole inhibitor of antimony fluoride(SbF_(3)),which possesses a higher hole-suppression capability than conventional tin fluo-ride(SnF_(2)).A small amount of SbF_(3) allows a wide range of hole-density modulation with no or less SnF_(2) addition,thus mitigating the negative effects of using only SnF_(2).A SnF_(2)/SbF_(3) co-additive approach was further developed to achieve high-performance Sn 2+perovskite thin-film transis-tors operated in the enhancement mode with a five-fold enhancement of the field-effect mobility and improved operational stability compared to using only SnF_(2).We expect that the SbF 3 hole suppressor and co-additive approach can provide opportunities for the development of high-efficiency Sn^(2+)-perovskite optoelectronic devices.
