With the advantages of large electro-optical coefficient,wide transparency window,and strong optical confinement,thin-film lithium niobate(TFLN)technique has enabled the development of various high-performance optoele...With the advantages of large electro-optical coefficient,wide transparency window,and strong optical confinement,thin-film lithium niobate(TFLN)technique has enabled the development of various high-performance optoelectronics devices,ranging from the ultra-wideband electro-optic modulators to the high-efficient quantum sources.However,the TFLN platform does not natively promise lasers and photodiodes.This study presents an InP/InGaAs modified uni-traveling carrier(MUTC)photodiodes heterogeneously integrated on the TFLN platform with a record-high 3-dB bandwidth of 110 GHz and a responsivity of 0.4 A/W at a 1,550-nm wavelength.It is implemented in a wafer-level TFLN-InP heterogeneous integration platform and is suitable for the large-scale,multi-function,and high-performance TFLN photonic integrated circuits.展开更多
基金supported by the National Key Research and Development Program(2022YFB2803800)Fundamental Research Funds for the Central Universities(2682022CX025).
文摘With the advantages of large electro-optical coefficient,wide transparency window,and strong optical confinement,thin-film lithium niobate(TFLN)technique has enabled the development of various high-performance optoelectronics devices,ranging from the ultra-wideband electro-optic modulators to the high-efficient quantum sources.However,the TFLN platform does not natively promise lasers and photodiodes.This study presents an InP/InGaAs modified uni-traveling carrier(MUTC)photodiodes heterogeneously integrated on the TFLN platform with a record-high 3-dB bandwidth of 110 GHz and a responsivity of 0.4 A/W at a 1,550-nm wavelength.It is implemented in a wafer-level TFLN-InP heterogeneous integration platform and is suitable for the large-scale,multi-function,and high-performance TFLN photonic integrated circuits.
