A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky(JBS)diodes under heavy ion irradiation.We propose and verify that the generation of ...A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky(JBS)diodes under heavy ion irradiation.We propose and verify that the generation of stacking faults(SFs)induced by the recombination of massive electron-hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments results.The irradiation experiment was carried out based on Ta ions with high linear energy transfer(LET)of 90.5 MeV/(mg/cm^(2)).It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20%of the rated reverse voltage.Micro-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS diodes.We combined the degraded performance of irradiated samples with SFs introduced by heavy ion irradiation.Finally,three-dimensional(3D)TCAD simulation was employed to evaluate the excessive electron-hole pairs(EHPs)concentration excited by heavy ion irradiation.It was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the substrate.The proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices.展开更多
A theoretical relationship between the wavelet transform and the fast fourier transformation(FFT) methods in broadband wireless signal is proposed for solving the direction of arrivals(DOAs) estimation problem. This l...A theoretical relationship between the wavelet transform and the fast fourier transformation(FFT) methods in broadband wireless signal is proposed for solving the direction of arrivals(DOAs) estimation problem. This leads naturally to the derivation of minimum variance distortionless response(MVDR) algorithm, which combines the benefits of subspace methods with those of wavelet, and spatially smoothed versions are utilized which exhibits good performance against correlated signals. We test the method's performance by simulating and comparing the performance of proposed algorithm, FFT MVDR and MVDR with correlated signals, and an improved performance is obtained.展开更多
文摘A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky(JBS)diodes under heavy ion irradiation.We propose and verify that the generation of stacking faults(SFs)induced by the recombination of massive electron-hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments results.The irradiation experiment was carried out based on Ta ions with high linear energy transfer(LET)of 90.5 MeV/(mg/cm^(2)).It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20%of the rated reverse voltage.Micro-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS diodes.We combined the degraded performance of irradiated samples with SFs introduced by heavy ion irradiation.Finally,three-dimensional(3D)TCAD simulation was employed to evaluate the excessive electron-hole pairs(EHPs)concentration excited by heavy ion irradiation.It was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the substrate.The proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices.
基金supported by the Chinese Natural Science Foundation 61401075Central University Business Fee ZYGX2015J106
文摘A theoretical relationship between the wavelet transform and the fast fourier transformation(FFT) methods in broadband wireless signal is proposed for solving the direction of arrivals(DOAs) estimation problem. This leads naturally to the derivation of minimum variance distortionless response(MVDR) algorithm, which combines the benefits of subspace methods with those of wavelet, and spatially smoothed versions are utilized which exhibits good performance against correlated signals. We test the method's performance by simulating and comparing the performance of proposed algorithm, FFT MVDR and MVDR with correlated signals, and an improved performance is obtained.