Epitaxial LaNiO_(3)(LNO)thin films prepared from the sols modified with polyethyleneimine(PEI)were grown on single-crystal LaAlO_(3),(LaAlO_(3))_(0.3)(SrAlTaO_(6))_(0.7),and SrTiO_(3) substrates,respectively,using a s...Epitaxial LaNiO_(3)(LNO)thin films prepared from the sols modified with polyethyleneimine(PEI)were grown on single-crystal LaAlO_(3),(LaAlO_(3))_(0.3)(SrAlTaO_(6))_(0.7),and SrTiO_(3) substrates,respectively,using a simple polymer assisted deposition(PAD).The epitaxial structure,surface morphologies and transport of the LNO films were studied by X-ray diffraction(θ/2θ symmetric scan,ω-scan,and in-planeφ-scan),the field emission scanning electron microscopy,and a standard dc four-probe method.It is found that,compared with that of LNO bulk,the c-axis parameter of the LNO film increases under compressive strain and decreases under tensile strain.All the LNO films exhibit metal properties in the temperature-dependent resistivity.The resistivity of the LNO films shows an increasing trend with the lattice mismatch strain changing from compressive to tensile.It is suggested that the oxygen vacancy compensated by more Ni^(2+)changed from Ni^(3+)in the film increases with the strain changing from compressive to tensile,which results in the increase of the resistivity.展开更多
Phase structures, the transport ana magnetic properties of the Perovskite-type manganite （La0.8-x CexSr0.2）0.97 MnO3（x = 0 - 0. 26） prepared by La2O3 containing CeO2 with different contents were studied. Experimen...Phase structures, the transport ana magnetic properties of the Perovskite-type manganite （La0.8-x CexSr0.2）0.97 MnO3（x = 0 - 0. 26） prepared by La2O3 containing CeO2 with different contents were studied. Experiments show that the compounds consist of a magnetic perovskite phase and non-magnetic CeO2 and Mn3O4. The resistivity and magnetoresistance ratio （MR） of the samples vary with changing x. Their room-temperature MR reaches -3% - - 14% at the magnetic field of 1 T. For x =0; x =0.037 and x = 0.26 samples, the conductance keeps unchanged basically in a relatively wide temperature range above 600 K, and the result shows that it is feasible for producing SOFC cathode materials with these samples.展开更多
基金Funded by the Natural Science Foundation of Anhui Jianzhu University(No.2019QDZ63)。
文摘Epitaxial LaNiO_(3)(LNO)thin films prepared from the sols modified with polyethyleneimine(PEI)were grown on single-crystal LaAlO_(3),(LaAlO_(3))_(0.3)(SrAlTaO_(6))_(0.7),and SrTiO_(3) substrates,respectively,using a simple polymer assisted deposition(PAD).The epitaxial structure,surface morphologies and transport of the LNO films were studied by X-ray diffraction(θ/2θ symmetric scan,ω-scan,and in-planeφ-scan),the field emission scanning electron microscopy,and a standard dc four-probe method.It is found that,compared with that of LNO bulk,the c-axis parameter of the LNO film increases under compressive strain and decreases under tensile strain.All the LNO films exhibit metal properties in the temperature-dependent resistivity.The resistivity of the LNO films shows an increasing trend with the lattice mismatch strain changing from compressive to tensile.It is suggested that the oxygen vacancy compensated by more Ni^(2+)changed from Ni^(3+)in the film increases with the strain changing from compressive to tensile,which results in the increase of the resistivity.
文摘Phase structures, the transport ana magnetic properties of the Perovskite-type manganite （La0.8-x CexSr0.2）0.97 MnO3（x = 0 - 0. 26） prepared by La2O3 containing CeO2 with different contents were studied. Experiments show that the compounds consist of a magnetic perovskite phase and non-magnetic CeO2 and Mn3O4. The resistivity and magnetoresistance ratio （MR） of the samples vary with changing x. Their room-temperature MR reaches -3% - - 14% at the magnetic field of 1 T. For x =0; x =0.037 and x = 0.26 samples, the conductance keeps unchanged basically in a relatively wide temperature range above 600 K, and the result shows that it is feasible for producing SOFC cathode materials with these samples.
