The effect of N_(2)-plasma-treated SiO_(2) interfacial layer on the interfacial and electrical characteristics of HfO_(2)/SiO_(2)/p-Si stacks grown by atomic layer deposition(ALD) was investigated.The microstructure a...The effect of N_(2)-plasma-treated SiO_(2) interfacial layer on the interfacial and electrical characteristics of HfO_(2)/SiO_(2)/p-Si stacks grown by atomic layer deposition(ALD) was investigated.The microstructure and interfacial chemical bonding configuration of the HfO_(2)/SiO_(2)/Si stacks were also examined by high-resolution transmission electron microscopy(HRTEM) and X-ray photoelectron spectroscopy(XPS).Compared with the samples without N2-plasma treatment,it is found that the samples with N2-plasma treatment have less oxygen vacancy density for SiO_(2) interfacial layer and better HfO_(2)/SiO_(2) interface.In agreement with XPS analyses,electrical measurements of the samples with N2-plasma treatment show better interfacial quality,including lower interface-state density(Dit,9.3 × 1011 cm^(-2)·eV^(-1) near midgap) and lower oxidecharge density(Q_(ox),2.5 × 1012 cm^(-2)),than those of the samples without N_(2)-plasma treatment.Additionally,the samples with N_(2)-plasma treatment have better electrical performances,including higher saturation capacitance density(1.49 μF·cm^(-2)) and lower leakage current density(3.2 × 10^(-6) A·cm^(-2) at V_(g)=V_(fb)-1 V).Furthermore,constant voltage stress was applied on the gate electrode to investigate the reliability of these samples.It shows that the samples with N_(2)-plasma treatment have better electrical stability than the samples without N_(2)-plasma treatment.展开更多
Resistive switching (RS) behaviors of Dy2O3- based memory devices with and without Pt nanocrystals (Pt-nc) layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2O3/Pt memory exhibits excelle...Resistive switching (RS) behaviors of Dy2O3- based memory devices with and without Pt nanocrystals (Pt-nc) layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2O3/Pt memory exhibits excellent unipolar RS characteristics, including highly uniform switching parameters, lower switching voltage (〈1.2 V), high resistance ratio (〉1 × 104), a large number of switching cycles, as well as long retention time (〉1 × 105 s), owing to the local electric field confined and strengthened near the nanocrystals' location.展开更多
The band alignment of HfO2 film on p-type (100) InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron sp...The band alignment of HfO2 film on p-type (100) InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron spectroscopy (XPS).The results show that there is no existence of Hf-P or Hf-In and there are interfacial In2O3 and InPO4 at the interface.Ultraviolet spectrophotometer (UVS) was employed to obtain the band gap value of HfO2.In 3d and Hf 4f core-level spectra and valence spectra were employed to obtain the valence band offset of HfO2/InP.Experimental results show that the (5.88 ± 0.05) eV band gap of HfO2 is aligned to the band gap of InP with a conduction band offset (△Ec) of (2.74 ± 0.05) eV and a valence band offset (△Ev) of (1.80 ± 0.05) eV.Compared with HfO2 on Si,HfO2 on InP exhibits a much larger conduction band offset (1.35 eV larger),which is beneficial to suppress the tunneling leakage current.展开更多
基金financially supported by the National Science and Technology Major Project of China (No. 2013ZX02303-001-002)。
文摘The effect of N_(2)-plasma-treated SiO_(2) interfacial layer on the interfacial and electrical characteristics of HfO_(2)/SiO_(2)/p-Si stacks grown by atomic layer deposition(ALD) was investigated.The microstructure and interfacial chemical bonding configuration of the HfO_(2)/SiO_(2)/Si stacks were also examined by high-resolution transmission electron microscopy(HRTEM) and X-ray photoelectron spectroscopy(XPS).Compared with the samples without N2-plasma treatment,it is found that the samples with N2-plasma treatment have less oxygen vacancy density for SiO_(2) interfacial layer and better HfO_(2)/SiO_(2) interface.In agreement with XPS analyses,electrical measurements of the samples with N2-plasma treatment show better interfacial quality,including lower interface-state density(Dit,9.3 × 1011 cm^(-2)·eV^(-1) near midgap) and lower oxidecharge density(Q_(ox),2.5 × 1012 cm^(-2)),than those of the samples without N_(2)-plasma treatment.Additionally,the samples with N_(2)-plasma treatment have better electrical performances,including higher saturation capacitance density(1.49 μF·cm^(-2)) and lower leakage current density(3.2 × 10^(-6) A·cm^(-2) at V_(g)=V_(fb)-1 V).Furthermore,constant voltage stress was applied on the gate electrode to investigate the reliability of these samples.It shows that the samples with N_(2)-plasma treatment have better electrical stability than the samples without N_(2)-plasma treatment.
基金financially supported by the National Natural Science Foundation of China(Nos.50932001,51102020,and 51202013)the Important National Science&Technology Specific Projects(No.2009ZX02039-005)
文摘Resistive switching (RS) behaviors of Dy2O3- based memory devices with and without Pt nanocrystals (Pt-nc) layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2O3/Pt memory exhibits excellent unipolar RS characteristics, including highly uniform switching parameters, lower switching voltage (〈1.2 V), high resistance ratio (〉1 × 104), a large number of switching cycles, as well as long retention time (〉1 × 105 s), owing to the local electric field confined and strengthened near the nanocrystals' location.
基金financially supported by the National Natural Science Foundation of China(Nos.50932001,51102020,and 51202013)
文摘The band alignment of HfO2 film on p-type (100) InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron spectroscopy (XPS).The results show that there is no existence of Hf-P or Hf-In and there are interfacial In2O3 and InPO4 at the interface.Ultraviolet spectrophotometer (UVS) was employed to obtain the band gap value of HfO2.In 3d and Hf 4f core-level spectra and valence spectra were employed to obtain the valence band offset of HfO2/InP.Experimental results show that the (5.88 ± 0.05) eV band gap of HfO2 is aligned to the band gap of InP with a conduction band offset (△Ec) of (2.74 ± 0.05) eV and a valence band offset (△Ev) of (1.80 ± 0.05) eV.Compared with HfO2 on Si,HfO2 on InP exhibits a much larger conduction band offset (1.35 eV larger),which is beneficial to suppress the tunneling leakage current.