Effect of integration of mechanical ball milling and flue gas desulfurization gypsum on dealkalization of bauxite residue

The synergistic impact of mechanical ball milling and flue gas desulfurization(FGD)gypsum on the dealkalization of bauxite residue was investigated through integrated analyses of solution chemistry,mineralogy,and microtopography.The results showed a significant decrease in Na_(2)O content(>30 wt.%)of FGD gypsum-treated bauxite residue after 30 min of mechanical ball milling.Mechanical ball milling resulted in differentiation of the elemental distribution,modification of the minerals in crystalline structure,and promotion in the dissolution of alkaline minerals,thus enhancing the acid neutralization capacity of bauxite residue.5 wt.%FGD gypsum combined with 30 min mechanical ball milling was optimal for the dealkalization of bauxite residue.

Efficacy of acupuncture at ghost points combined with fluoxetine in treating depression:A randomized study

BACKGROUND Depression affects more than 350 million people worldwide.In China,4.2%(54 million people)of the total population suffers from depression.Psychotherapy has been shown to change cognition,improve personality,and enhance the ability to cope with difficulties and setbacks.While pharmacotherapy can reduce symptoms,it is also associated with adverse reactions and relapse after drug withdrawal.Therefore,there has been an increasing emphasis placed on the use of non-pharmacological therapies for depression.The hypothesis of this study was that acupuncture at ghost points combined with fluoxetine would be more effective than fluoxetine alone for the treatment of depression.AIM To investigate the efficacy of acupuncture at ghost points combined with fluoxetine for the treatment of patients with depression.METHODS This randomized controlled trial included patients with mild to moderate depression(n=160).Patients received either acupuncture at ghost points combined with fluoxetine(n=80)or fluoxetine alone(control group,n=80).Needles were retained in place for 30 min,5 times a week;three treatment cycles were administered.The Mann–Whitney U test was used to compare functional magnet resonance imaging parameters,Hamilton depression rating scale(HAMD)scores,and self-rating depression scale(SDS)scores between the acupuncture group and control group.RESULTS There were no significant differences in HAMD or SDS scores between the acupuncture group and control group,before or after 4 wk of treatment.The acupuncture group exhibited significantly lower HAMD and SDS scores than the control group after 8 wk of treatment(P<0.05).The acupuncture group had significantly lower fractional Amplitude of Low Frequency Fluctuations values for the left anterior wedge leaf,left posterior cingulate gyrus,left middle occipital gyrus,and left inferior occipital gyrus after 8 wk.The acupuncture group also had significantly higher values for the right inferior frontal gyrus,right insula,and right hippocampus(P<0.05).After 8 wk of treatment,the effective rates of the acupuncture and control groups were 51.25%and 36.25%,respectively(P<0.05).CONCLUSION The study results suggest that acupuncture at ghost points combined with fluoxetine is more effective than fluoxetine alone for the treatment of patients with mild to moderate depression.

The Lattice Kinetic Monte Carlo Simulation of Boron Diffusion in SiGe

The lattice kinetic Monte Carlo simulation (kMCS) was applied to study the boron diffusion in Si-SiGe beyond nanotechnology. Both the interstitialcy and kick-out mechanisms of boron diffusion were considered, including the effects of annealing temperatures, boron dopant concentrations, Ge compositions, and concentrations of Si self-interstitial defects (SiI). The effects on boron diffusion caused by single and double layer(s) of SiGe phase with different Ge contents and varying boron concentrations in double layers of SiGe phase were also simulated. The results show that boron diffusion in Si and between SiGe-Si both largely increase as the temperature or concentration of SiI increases, but the boron diffusion between SiGe-Si is much less than in Si. Increasing the Ge contents in SiGe alloy could retard boron diffusion heavily, while increasing the boron concentration on SiGe phase would enhance boron diffusion.