The semiconductor laser array with single-mode emission is presented in this paper.The 6-μm-wide ridge waveguides(RWGs)are fabricated to select the lateral mode.Thus the fundamental mode of laser array can be obtaine...The semiconductor laser array with single-mode emission is presented in this paper.The 6-μm-wide ridge waveguides(RWGs)are fabricated to select the lateral mode.Thus the fundamental mode of laser array can be obtained by the RWGs.And the maximum output power of single-mode emission can reach 36 W at an injection current of 43 A,after that,a kink will appear.The slow axis(SA)far-field divergence angle of the unit is 13.65.The beam quality factor M;of the units determined by the second-order moment(SOM)method,is 1.2.This single-mode emission laser array can be used for laser processing.展开更多
The 795 nm distributed feedback lasers have great application in pumping the Rb D1 transition.In this paper,in order to realize specific 795 nm lasing,we designed tilted ridge distributed feedback lasers based on pure...The 795 nm distributed feedback lasers have great application in pumping the Rb D1 transition.In this paper,in order to realize specific 795 nm lasing,we designed tilted ridge distributed feedback lasers based on purely gain coupled effect induced by periodic current injection windows through changing the angle of the tilted ridge.The fabricated devices were cleaved into 2 mm-cavity-length,including 5 tilted angles.The peak output powers of all devices were above 30 mW.Single longitudinal mode lasing was realized in all tilted Fabry-Perot cavities using periodic current injection windows,with side mode suppression ratio over 30 dB.The total wavelength range covered 8.656 nm at 20℃.It was disclosed theoretically and experimentally that the output powers,threshold currents,and central wavelengths of the tilted ridge purely gain coupled DFB lasers were relevant to the tilted angles.The results will be instructive for future design of DFB laser arrays with different central wavelengths.展开更多
基金Project supported by the National Science and Technology Major Project of China(Grant Nos.2018YFB0504600and 2017YFB0405102)the Frontier Science Key Program of the President of the Chinese Academy of Sciences(Grant No.QYZDY-SSW-JSC006)+7 种基金the Pilot Project of the Chinese Academy of Sciences(Grant No.XDB43030302)the National Natural Science Foundation of China(Grant Nos.62090051,62090052,62090054,11874353,61935009,61934003,61904179,61727822,61805236,62004194,and 61991433)the Science and Technology Development Project of Jilin Province,China(Grant Nos.20200401062GX,202001069GX,20200501006GX,20200501007GX,20200501008GX,and 20190302042GX)the Key Research and Development Project of Guangdong Province,China(Grant No.2020B090922003)the Equipment Pre-researchChina(Grant No.2006ZYGG0304)the Special Scientific Research Project of the Academician Innovation Platform in Hainan Province,China(Grant No.YSPTZX202034)the Dawn Talent Training Program of CIOMP,China。
文摘The semiconductor laser array with single-mode emission is presented in this paper.The 6-μm-wide ridge waveguides(RWGs)are fabricated to select the lateral mode.Thus the fundamental mode of laser array can be obtained by the RWGs.And the maximum output power of single-mode emission can reach 36 W at an injection current of 43 A,after that,a kink will appear.The slow axis(SA)far-field divergence angle of the unit is 13.65.The beam quality factor M;of the units determined by the second-order moment(SOM)method,is 1.2.This single-mode emission laser array can be used for laser processing.
基金the National Science and Technology Major Project of China(Grant Nos.2017YFB0503100,2018YFB0504600,2018YFB2200300,and 2020YFB2205902)Frontier Science Key Program of the President of the Chinese Academy of Sciences(Grant No.QYZDY-SSW-JSC006)+3 种基金the National Natural Science Foundation of China(Grant Nos.62090051,62090052,62090054,11874353,61935009,61934003,61904179,61727822,61805236,and 62004194)Science and Technology Development Project of Jilin Province,China(Grant Nos.20200401069GX,20200401062GX,20200501007GX,20200501008GX,and 20200501009GX)Special Scientific Research Project of Academician Innovation Platform in Hainan Province,China(Grant No.YSPTZX202034)Dawn Talent Training Program of CIOMP,and Independent Innovation Project of State Key Laboratory of Luminescence and Applications(Grant No.SKL1-Z-2020-02).
文摘The 795 nm distributed feedback lasers have great application in pumping the Rb D1 transition.In this paper,in order to realize specific 795 nm lasing,we designed tilted ridge distributed feedback lasers based on purely gain coupled effect induced by periodic current injection windows through changing the angle of the tilted ridge.The fabricated devices were cleaved into 2 mm-cavity-length,including 5 tilted angles.The peak output powers of all devices were above 30 mW.Single longitudinal mode lasing was realized in all tilted Fabry-Perot cavities using periodic current injection windows,with side mode suppression ratio over 30 dB.The total wavelength range covered 8.656 nm at 20℃.It was disclosed theoretically and experimentally that the output powers,threshold currents,and central wavelengths of the tilted ridge purely gain coupled DFB lasers were relevant to the tilted angles.The results will be instructive for future design of DFB laser arrays with different central wavelengths.
