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High thermal stability of diamond-cBN-B_4C-Si composites
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作者 Hong-Sheng Jia Pin-Wen Zhu +7 位作者 Hao Ye Bin Zuo yuan-long e Shi-Chong Xu Ji Li Hai-Bo Li Xiao-Peng Jia Hong-An Ma 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第1期521-525,共5页
Improving the thermal stability of diamond and other superhard materials has great significance in various applications. Here, we report the synthesis and characterization of bulk diamond–cBN–B4C–Si composites sint... Improving the thermal stability of diamond and other superhard materials has great significance in various applications. Here, we report the synthesis and characterization of bulk diamond–cBN–B4C–Si composites sintered at high pressure and high temperature(HPHT, 5.2 GPa, 1620–1680 K for 3–5 min). The results show that the diamond, cBN, B4C,BxSiC, SiO2 and amorphous carbon or a little surplus Si are present in the sintered samples. The onset oxidation temperature of 1673 K in the as-synthesized sample is much higher than that of diamond, cBN, and B4C. The high thermal stability is ascribed to the covalent bonds of B–C, C–N, and the solid-solution of BxSiC formed during the sintering process. The results obtained in this work may be useful in preparing superhard materials with high thermal stability. 展开更多
关键词 high pressure and high temperature diamond–cBN–B4C–Si COMPOSITES high thermal stability
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