Lithium-ion batteries(LIBs) and sodium-ion batteries(SIBs) have received much attention in energy storage system. In particular, among the great efforts on enhancing the performance of LIBs and SIBs, yolk–shell(YS) s...Lithium-ion batteries(LIBs) and sodium-ion batteries(SIBs) have received much attention in energy storage system. In particular, among the great efforts on enhancing the performance of LIBs and SIBs, yolk–shell(YS) structured materials have emerged as a promising strategy toward improving lithium and sodium storage. YS structures possess unique interior void space, large surface area and short diffusion distance, which can solve the problems of volume expansion and aggregation of anode materials, thus enhancing the performance of LIBs and SIBs. In this review, we present a brief overview of recent advances in the novel YS structures of spheres, polyhedrons and rods with controllable morphology and compositions. Enhanced electrochemical performance of LIBs and SIBs based on these novel YS structured anode materials was discussed in detail.展开更多
Subthreshold conduction is governed by the potential distribution. We focus on full two-dimensional（2D） analytical modeling in order to evaluate the 2D potential profile within the active area of Fin FET structure.S...Subthreshold conduction is governed by the potential distribution. We focus on full two-dimensional（2D） analytical modeling in order to evaluate the 2D potential profile within the active area of Fin FET structure.Surfaces and interfaces, which are key nanowire elements, are carefully studied. Different structures have different boundary conditions, and therefore different effects on the potential distributions. A range of models in Fin FET are reviewed in this paper. Parabolic approximation and evanescent mode are two different basic math methods to simplify the Poisson＇s equation. Both superposition method and parabolic approximation are widely used in heavily doped devices. It is helpful to learn performances of MOSFETs with different structures. These two methods achieved improvement to face different structures from heavily doped devices or lightly doped devices to junctionless transistors.展开更多
基金supported by National Program on Key Basic Research Project (973 Program) No. 2013CB933301National Natural Science Foundation of China No. 51272038 and 61474015
文摘Lithium-ion batteries(LIBs) and sodium-ion batteries(SIBs) have received much attention in energy storage system. In particular, among the great efforts on enhancing the performance of LIBs and SIBs, yolk–shell(YS) structured materials have emerged as a promising strategy toward improving lithium and sodium storage. YS structures possess unique interior void space, large surface area and short diffusion distance, which can solve the problems of volume expansion and aggregation of anode materials, thus enhancing the performance of LIBs and SIBs. In this review, we present a brief overview of recent advances in the novel YS structures of spheres, polyhedrons and rods with controllable morphology and compositions. Enhanced electrochemical performance of LIBs and SIBs based on these novel YS structured anode materials was discussed in detail.
文摘Subthreshold conduction is governed by the potential distribution. We focus on full two-dimensional（2D） analytical modeling in order to evaluate the 2D potential profile within the active area of Fin FET structure.Surfaces and interfaces, which are key nanowire elements, are carefully studied. Different structures have different boundary conditions, and therefore different effects on the potential distributions. A range of models in Fin FET are reviewed in this paper. Parabolic approximation and evanescent mode are two different basic math methods to simplify the Poisson＇s equation. Both superposition method and parabolic approximation are widely used in heavily doped devices. It is helpful to learn performances of MOSFETs with different structures. These two methods achieved improvement to face different structures from heavily doped devices or lightly doped devices to junctionless transistors.
