In this Letter, we report large-area（600 μm diameter） 4H-SiC avalanche photodiodes（APDs） with high gain and low dark current for visible-blind ultraviolet detection. Based on the separate absorption and multiplic...In this Letter, we report large-area（600 μm diameter） 4H-SiC avalanche photodiodes（APDs） with high gain and low dark current for visible-blind ultraviolet detection. Based on the separate absorption and multiplication structure, 4H-SiC APDs passivated with SiNxinstead of SiO2 are demonstrated for the first time, to the best of our knowledge. Benefitting from the SiNx passivation, the surface leakage current is effectively suppressed. At room temperature, high multiplication gain of 6.5 × 10^5 and low dark current density of 0.88 μA∕cm^2 at the gain of 1000 are achieved for our devices, which are comparable to the previously reported small-area Si C APDs.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61604137 and 61674130)
文摘In this Letter, we report large-area（600 μm diameter） 4H-SiC avalanche photodiodes（APDs） with high gain and low dark current for visible-blind ultraviolet detection. Based on the separate absorption and multiplication structure, 4H-SiC APDs passivated with SiNxinstead of SiO2 are demonstrated for the first time, to the best of our knowledge. Benefitting from the SiNx passivation, the surface leakage current is effectively suppressed. At room temperature, high multiplication gain of 6.5 × 10^5 and low dark current density of 0.88 μA∕cm^2 at the gain of 1000 are achieved for our devices, which are comparable to the previously reported small-area Si C APDs.
