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PIFs interact with SWI2/SNF2-related 1 complex subunit 6 to regulate H2A.Z deposition and photomorphogenesis in Arabidopsis
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作者 Huiru Chen Wanting Wang +9 位作者 Xiao Chen Yake Niu yuanyuan qi Ze Yu Minyu Xiong Pengbo Xu Wenxiu Wang Tongtong Guo Hong-Quan Yang Zhilei Mao 《Journal of Genetics and Genomics》 SCIE CSCD 2023年第12期983-992,共10页
Light is an essential environmental signal perceived by a broad range of photoreceptors in plants. Among them, the red/far-red light receptor phytochromes function to promote photomorphogenesis, which is critical to t... Light is an essential environmental signal perceived by a broad range of photoreceptors in plants. Among them, the red/far-red light receptor phytochromes function to promote photomorphogenesis, which is critical to the survival of seedlings after seeds germination. The basic-helix-loop-helix transcription factors phytochrome-interacting factors (PIFs) are the pivotal direct downstream components of phytochromes. H2A.Z is a highly conserved histone variant regulating gene transcription, and its incorporation into nucleosomes is catalyzed by SWI2/SNF2-related 1 complex, in which SWI2/SNF2-related 1 complex subunit 6 (SWC6) and actin-related protein 6 (ARP6) serve as core subunits. Here, we show that PIFs physically interact with SWC6 in vitro and in vivo, leading to the disassociation of HY5 from SWC6. SWC6 and ARP6 regulate hypocotyl elongation partly through PIFs in red light. PIFs and SWC6 coregulate the expression of auxin-responsive genes such as IAA6, IAA19, IAA20, and IAA29 and repress H2A.Z deposition at IAA6 and IAA19 in red light. Based on previous studies and our findings, we propose that PIFs inhibit photomorphogenesis, at least in part, through repression of H2A.Z deposition at auxin-responsive genes mediated by the interactions of PIFs with SWC6 and promotion of their expression in red light. 展开更多
关键词 Phytochrome-interacting factors PHOTOMORPHOGENESIS H2A.Z SWC6 Auxin-responsive genes ARABIDOPSIS
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新型空穴传输材料CuSCN在光电器件中的应用 被引量:1
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作者 亓媛媛 李明光 +3 位作者 王宏磊 张雯 陈润锋 黄维 《化学进展》 SCIE CAS CSCD 北大核心 2018年第6期785-796,共12页
硫氰化亚铜(CuSCN)是一种良好的p型宽禁带透明半导体材料,具有较高的透光性、高导电率、易于常温制备、可溶液加工性以及价格低廉等优点,使得CuSCN成为未来大面积制备光电器件的有力竞争者。本文概述了CuSCN半导体材料的晶体结构、光学... 硫氰化亚铜(CuSCN)是一种良好的p型宽禁带透明半导体材料,具有较高的透光性、高导电率、易于常温制备、可溶液加工性以及价格低廉等优点,使得CuSCN成为未来大面积制备光电器件的有力竞争者。本文概述了CuSCN半导体材料的晶体结构、光学性质以及空穴传输特性等基本物理性质,介绍了几种常见CuSCN薄膜的制备方法,包括溶液加工成膜法、电化学沉积法和连续性离子层吸附与反应法等;对上述不同的制备方法结合实际应用进行了阐述,同时对比与讨论了各种制备方法的优点和缺点;接下来总结了CuSCN材料作为空穴传输层在场效应晶体管(FETs)、有机电致发光器件(OLEDs)、有机太阳能电池(OSCs)以及有机-无机杂化太阳能电池(HSCs)等领域的应用及其研究进展,最后对CuSCN所面临的问题以及研究前景进行了展望。 展开更多
关键词 硫氰化亚铜 空穴传输层 P型半导体 透光性 光电器件
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