A novel normally-off AlGaN/GaN high-electron-mobility transistor(HEMT)with a p-GaN Schottky hybrid gate(PSHG)is proposed,and compared with the conventional p-GaN normally-off AlGaN/GaN HEMTs.This structure can be real...A novel normally-off AlGaN/GaN high-electron-mobility transistor(HEMT)with a p-GaN Schottky hybrid gate(PSHG)is proposed,and compared with the conventional p-GaN normally-off AlGaN/GaN HEMTs.This structure can be realized by selective etching of p-GaN layer,which enables the Schottky junction and PN junction to control the channel charge at the same time.The direct current(DC)and switching characteristics of the PSHG HEMTs are simulated by Slivaco TCAD,and the p-GaN HEMTs and conventional normally-on HEMTs are also simulated for comparison.The simulation results show that the PSHG HEMTs have a higher current density and a lower on-resistance than p-GaN HEMTs,which is more obvious with the decrease of p-GaN ratios of the PSHG HEMTs.The breakdown voltage and threshold voltage of the PSHG HEMTs are very close to those of the p-GaN HEMTs.In addition,the PSHG HEMTs have a higher switching speed than the conventional normally-on HEMTs,and the p-GaN layer ratio has no obvious effect on the switching speed.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.62004150)Postdoctoral Science Foundation of China(Grant No.2018M643575)the Fundamental Research Funds for the Central Universities,and the Innovation Fund of Xidian University(Grant No.JB211104)。
文摘A novel normally-off AlGaN/GaN high-electron-mobility transistor(HEMT)with a p-GaN Schottky hybrid gate(PSHG)is proposed,and compared with the conventional p-GaN normally-off AlGaN/GaN HEMTs.This structure can be realized by selective etching of p-GaN layer,which enables the Schottky junction and PN junction to control the channel charge at the same time.The direct current(DC)and switching characteristics of the PSHG HEMTs are simulated by Slivaco TCAD,and the p-GaN HEMTs and conventional normally-on HEMTs are also simulated for comparison.The simulation results show that the PSHG HEMTs have a higher current density and a lower on-resistance than p-GaN HEMTs,which is more obvious with the decrease of p-GaN ratios of the PSHG HEMTs.The breakdown voltage and threshold voltage of the PSHG HEMTs are very close to those of the p-GaN HEMTs.In addition,the PSHG HEMTs have a higher switching speed than the conventional normally-on HEMTs,and the p-GaN layer ratio has no obvious effect on the switching speed.
