Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photo...Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photodetection properties are investigated.The results show that the photocurrent increases to 11.2 mA under 200μW·cm^(-2)254 nm illumination and±20 V bias,leading to photo-responsivity as high as 788 A·W^(-1).The Si-dopedβ-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.展开更多
基金the National Natural Science Foundation of China(Grant Nos.61774019 and 51572033)the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT)the Fundamental Research Funds for the Central Universities,China.
文摘Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photodetection properties are investigated.The results show that the photocurrent increases to 11.2 mA under 200μW·cm^(-2)254 nm illumination and±20 V bias,leading to photo-responsivity as high as 788 A·W^(-1).The Si-dopedβ-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.
