Employing a random forest model to forecast the likelihood of coronary artery lesions in Kawasaki disease: a study centered on four biomarkers

Background:Kawasaki disease is an acute immune vasculitis,which is more common in children under 5 years old.Kawasaki disease mainly affects the cardiovascular system,especially the coronary arteries.Once coronary artery damage occurs,it can significantly impact the patient’s prognosis.Therefore,in some countries and regions,Kawasaki disease has become a common acquired heart disease.Methods:First,univariate analysis was conducted on each predictive factor.Then,Least Absolute Shrinkage and Selection Operator and random forest algorithms were used to screen all predictive factors,and the prediction model was evaluated using receiver operating characteristic curve,calibration curve,and Decision Curve Analysis.Results:This study,based on data from 228 Kawasaki disease patients,utilized a random forest model to identify four predictive factors:white blood cell count,creatine kinase isoenzyme MB,albumin,and neutrophil count.These factors were used to construct a prediction model,which achieved an area under the curve of 0.743.Conclusions:We developed a forest plot based on white blood cell count,creatine kinase isoenzyme MB,albumin,and neutrophil count to effectively predict the occurrence of coronary artery lesions in Kawasaki disease.

心理弹性对胃癌根治术患者癌症复发恐惧的作用:领悟社会支持的调节效应

背景胃癌根治术后患者对癌症复发恐惧(fear of cancer recurrence,FCR)心理将严重影响生活质量.心理弹性能使患者保持良好的心理状态去面对逆境,可能会减轻FCR的影响作用.而良好的社会支持对个人的心理健康具有重要作用,积极的领悟社会支持可通过增强心理弹性的作用而减轻负面情绪.目的探讨心理弹性对胃癌根治术患者FCR的作用以及领悟社会支持在二者间的调节效应.方法选择2018-02/2019-08在我院住院的120例胃癌根治术患者为研究对象,采用汉化版癌症患者恐惧疾病进展简化量表,心理弹性量表以及领悟社会支持量表进行调查,然后统计分析.结果胃癌根治术患者FCR得分42.3分±7.6分.其中,在职患者FCR得分41.8分±7.2分,高于非在职患者FCR得分39.1分±6.9分(P<0.05);医疗负担很重和有一定医疗负担患者FCR得分分别为42.9分±8.2分、42.1分±6.9分,均高于基本无负担患者FCR得分38.9分±7.1分(P<0.05).而胃癌根治术患者一般资料中的其他方面FCR得分(P>0.05).胃癌根治术患者的FCR分与领悟社会支持总分和心理弹性得分均呈负相关(r=-0.144,-0.271,P<0.05),领悟社会支持总分以及各分量表得分与心理弹性均呈正相关(r=0.365,0.348,0.323,0.373,P<0.05).采用分层多元线性回归分析,结果表明对FCR具有负向预测作用(β=-0.236,P<0.01),且领悟社会支持在心理弹性和FCR两者间起到了调节作用(β=-0.182,P<0.01).其中家庭支持(β=-0.164,P=0.003,△R2=0.025),朋友支持(β=-0.175,P=0.001,△R2=0.027),其他支持(β=-0.141,P=0.008,△R2=0.025)均能在心理弹性和FCR间起到调节作用.结论心理弹性对胃癌根治术患者的FCR有直接影响作用;领悟社会支持水平的升高会增强心理弹性对FCR的影响,从而进一步降低FCR水平.

Growth of β-Ga_2O_3 Films on Sapphire by Hydride Vapor Phase Epitaxy

Two-inch Ga_2O_3 films with（ˉ201）-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga_2O_3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 e V.

Comparison study of GaN films grown on porous and planar GaN templates

The GaN thick films have been grown on porous GaN template and planar metal-organic chemical vapor deposition(MOCVD)-GaN template by halide vapor phase epitaxy(HVPE). The analysis results indicated that the GaN films grown on porous and planar GaN templates under the same growth conditions have similar structural, optical, and electrical properties. But the porous GaN templates could significantly reduce the stress in the HVPE-GaN epilayer and enhance the photoluminescence(PL) intensity. The voids in the porous template were critical for the strain relaxation in the GaN films and the increase of the PL intensity. Thus, the porous GaN converted from β-Ga2O3 film as a novel promising template is suitable for the growth of stress-free GaN films.

Synthesis and characterization of β-Ga_2O_3@GaN nanowires

In this work, we prepared the β-Ga_2O_3@GaN nanowires(NWs) by oxidizing GaN NWs. High-quality hexagonal wurtzite GaN NWs were achieved and the conversion from GaN to β-Ga_2O_3 was confirmed by x-ray diffraction, Raman spectroscopy and transmission electron microscopy. The effect of the oxidation temperature and time on the oxidation degree of GaN NWs was investigated systematically. The oxidation rate of GaN NWs was estimated at different temperatures.

Study on the nitridation of β-Ga2O3 films

Single-crystal GaN layers have been obtained by nitridingβ-Ga2O3 films in NH3 atmosphere.The effect of the temperature and time on the nitridation and conversion of Ga2O3 films have been investigated.The nitridation process results in lots of holes in the surface of films.The higher nitridation temperature and longer time can promote the nitridation and improve the crystal quality of GaN films.The converted Ga N porous films show the single-crystal structures and lowstress,which can be used as templates for the epitaxial growth of high-quality GaN.