AlGaN-based light-emitting diodes(LEDs)operating in the deep-ultraviolet(DUV)spectral range(210–280 nm)have demonstrated potential applications in physical sterilization.However,the poor external quantum efficiency(E...AlGaN-based light-emitting diodes(LEDs)operating in the deep-ultraviolet(DUV)spectral range(210–280 nm)have demonstrated potential applications in physical sterilization.However,the poor external quantum efficiency(EQE)hinders further advances in the emission performance of AlGaN-based DUV LEDs.Here,we demonstrate the performance of 270-nm AlGaN-based DUV LEDs beyond the state-of-the-art by exploiting the innovative combination of bandgap engineering and device craft.By adopting tailored multiple quantum wells(MQWs),a reflective Al reflector,a low-optical-loss tunneling junction(TJ)and a dielectric SiO_(2)insertion structure(IS-SiO_(2)),outstanding light output powers(LOPs)of 140.1 mW are achieved in our DUV LEDs at 850 mA.The EQEs of our DUV LEDs are 4.5 times greater than those of their conventional counterparts.This comprehensive approach overcomes the major difficulties commonly faced in the pursuit of high-performance AlGaN-based DUV LEDs,such as strong quantum-confined Stark effect(QCSE),severe optical absorption in the p-electrode/ohmic contact layer and poor transverse magnetic(TM)-polarized light extraction.Furthermore,the on-wafer electroluminescence characterization validated the scalability of our DUV LEDs to larger production scales.Our work is promising for the development of highly efficient AlGaN-based DUV LEDs.展开更多
基金financial support from the National Natural Science Foundation of China(Nos.52075394 and 51675386)the National Key Research and Development Program of China(Nos.2021YFB3600200 and 2022YFB3603603)+1 种基金the Key Research and Development Program of Hubei Province(No.2023BAB137)the Knowledge Innovation Program of Wuhan-Basic Research,the Fundamental Research Funds for the Central Universities,and the National Youth Talent Support Program.
文摘AlGaN-based light-emitting diodes(LEDs)operating in the deep-ultraviolet(DUV)spectral range(210–280 nm)have demonstrated potential applications in physical sterilization.However,the poor external quantum efficiency(EQE)hinders further advances in the emission performance of AlGaN-based DUV LEDs.Here,we demonstrate the performance of 270-nm AlGaN-based DUV LEDs beyond the state-of-the-art by exploiting the innovative combination of bandgap engineering and device craft.By adopting tailored multiple quantum wells(MQWs),a reflective Al reflector,a low-optical-loss tunneling junction(TJ)and a dielectric SiO_(2)insertion structure(IS-SiO_(2)),outstanding light output powers(LOPs)of 140.1 mW are achieved in our DUV LEDs at 850 mA.The EQEs of our DUV LEDs are 4.5 times greater than those of their conventional counterparts.This comprehensive approach overcomes the major difficulties commonly faced in the pursuit of high-performance AlGaN-based DUV LEDs,such as strong quantum-confined Stark effect(QCSE),severe optical absorption in the p-electrode/ohmic contact layer and poor transverse magnetic(TM)-polarized light extraction.Furthermore,the on-wafer electroluminescence characterization validated the scalability of our DUV LEDs to larger production scales.Our work is promising for the development of highly efficient AlGaN-based DUV LEDs.
