The physical mechanism of the resistance switching for RRAM with co-doped defects（Ag and oxygen vacancy）is studied based on the first principle calculations and the simulation tool VASR The interaction energy,format...The physical mechanism of the resistance switching for RRAM with co-doped defects（Ag and oxygen vacancy）is studied based on the first principle calculations and the simulation tool VASR The interaction energy,formation energy and density of states of Ag and oxygen vacancy defect（VO）are calculated.The calculated results reveal that the co-doped system is more stable than the system only doped either Ag or VO defect and the impurity energy levels in the band gap are contributed by Ag and VO defects.The obtained partial charge density confirmed further that the clusters are obvious in the direction of Ag to Hf ions,which means that it is Ag but VO plays a role of conductive paths.For the formation mechanism,the modified electron affinity and the partial charge density difference are calculated.The results show that the ability of electron donors of Ag is stronger than VO In conclusion,the conductivity of the physical mechanism of resistance switching in the co-doped system mainly depends on the doped Ag.展开更多
A two-dimensional analytical model of double-gate（DG） tunneling field-effect transistors（TFETs） with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potentia...A two-dimensional analytical model of double-gate（DG） tunneling field-effect transistors（TFETs） with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile,the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate,and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results.展开更多
基金Project supported by the National Natural Science Foundation of China(No.61376106)the Research Foundation of Education Bureau of Anhui Province,China(Nos.KJ2015A276,KJ2016A574,KJ2014A208)the Special Foundation for Young Scientists of Hefei Normal University(No.2015rcjj02)
文摘The physical mechanism of the resistance switching for RRAM with co-doped defects（Ag and oxygen vacancy）is studied based on the first principle calculations and the simulation tool VASR The interaction energy,formation energy and density of states of Ag and oxygen vacancy defect（VO）are calculated.The calculated results reveal that the co-doped system is more stable than the system only doped either Ag or VO defect and the impurity energy levels in the band gap are contributed by Ag and VO defects.The obtained partial charge density confirmed further that the clusters are obvious in the direction of Ag to Hf ions,which means that it is Ag but VO plays a role of conductive paths.For the formation mechanism,the modified electron affinity and the partial charge density difference are calculated.The results show that the ability of electron donors of Ag is stronger than VO In conclusion,the conductivity of the physical mechanism of resistance switching in the co-doped system mainly depends on the doped Ag.
基金Project supported by the National Natural Science Foundation of China(No.61376106)the University Natural Science Research Key Project of Anhui Province(No.KJ2016A169)the Introduced Talents Project of Anhui Science and Technology University
文摘A two-dimensional analytical model of double-gate（DG） tunneling field-effect transistors（TFETs） with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile,the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate,and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results.
