C/C-SiC-HfC composites were fabricated by using Precursor Infiltration and Pyrolysis(PIP) combined with Gaseous Silicon Infiltration(GSI) process. Different GSI temperatures(1900 ℃ and 2100 ℃) were selected. The com...C/C-SiC-HfC composites were fabricated by using Precursor Infiltration and Pyrolysis(PIP) combined with Gaseous Silicon Infiltration(GSI) process. Different GSI temperatures(1900 ℃ and 2100 ℃) were selected. The combination of PIP and GSI could significantly reduce the preparation time of the composites. The morphology displaying a rich-Si layer was formed on the surface of the composites prepared at GSI 2100 ℃. Ablation performance of the composites was investigated by oxyacetylene torch. The results showed that after ablation for 120 s, compared to the composites prepared by PIP + 1900 ℃ GSI, the linear and mass ablation rates of the composites fabricated by PIP + 2100 ℃ GSI were decreased from 8.05 μm/s to 5.06 μm/s and from 1.61 mg/s to 1.03 mg/s, respectively. The coverage of the rich-Si surface layer promoted the generation of more SiO_(2) during ablation, which not only benefited for decreasing the surface temperature but also contributed to the formation of H-Si-O glass and the HfO_(2) skeleton, thus better resisting the denudation of the oxyacetylene torch.展开更多
基金supported by the National Key Research and Development Program of China(No.2021YFA0715803)the Science Center for Gas Turbine Project,China(No.P2021A-Ⅳ-003-001)+2 种基金the National Natural Science Foundation of China(52002321)the Fundamental Research Funds for the Central Universities,China(No.G2022KY0609)the Young Talent Program of Association for Science and Technology in Xi’an,China(No.095920211338).
文摘C/C-SiC-HfC composites were fabricated by using Precursor Infiltration and Pyrolysis(PIP) combined with Gaseous Silicon Infiltration(GSI) process. Different GSI temperatures(1900 ℃ and 2100 ℃) were selected. The combination of PIP and GSI could significantly reduce the preparation time of the composites. The morphology displaying a rich-Si layer was formed on the surface of the composites prepared at GSI 2100 ℃. Ablation performance of the composites was investigated by oxyacetylene torch. The results showed that after ablation for 120 s, compared to the composites prepared by PIP + 1900 ℃ GSI, the linear and mass ablation rates of the composites fabricated by PIP + 2100 ℃ GSI were decreased from 8.05 μm/s to 5.06 μm/s and from 1.61 mg/s to 1.03 mg/s, respectively. The coverage of the rich-Si surface layer promoted the generation of more SiO_(2) during ablation, which not only benefited for decreasing the surface temperature but also contributed to the formation of H-Si-O glass and the HfO_(2) skeleton, thus better resisting the denudation of the oxyacetylene torch.
