Halide vapor phase epitaxy(HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc.HVPE is a non-organic chemical vapor deposition(CVD) technique, characterized by high quality growth o...Halide vapor phase epitaxy(HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc.HVPE is a non-organic chemical vapor deposition(CVD) technique, characterized by high quality growth of epitaxial layers with fast growth rate, which is versatile for the fabrication of both substrates and devices with wide applications. In this paper, we review the usage of HVPE for the growth and device applications of Ga_2O_3, with detailed discussions on a variety of technological aspects of HVPE. It is concluded that HVPE is a promising candidate for the epitaxy of large-area Ga_2O_3 substrates and for the fabrication of high power β-Ga_2O_3 devices.展开更多
Summary of main observation and conclusion Sulfonylation of alkenes through photoredox-catalyzed functionalization of alkenes with thiourea dioxide under visible-ight rradiation is achleved,The reaction of alkenes,thi...Summary of main observation and conclusion Sulfonylation of alkenes through photoredox-catalyzed functionalization of alkenes with thiourea dioxide under visible-ight rradiation is achleved,The reaction of alkenes,thiourea dioxide and electropiles provides a green and fficient access to alkyl sul-fones and sulfonamides.A broad reaction scope is presented with good functional group compat bility and excellent regiaselectivity.A plausible mecha-nism involving a radical addition process with sulfur dioxide rpdical anion(SO2-)derived from the oxidation of sulfur dioxide anion(S02^-2) is proposed,which is supported by fluorescence quenching experiments.展开更多
基金supported by the National Key R&D Program of China(No.2017YFB0404201)the Solid State Lighting and Energy-Saving Electronics Collaborative Innovation Center,PAPD,and the State Grid Shandong Electric Power Company
文摘Halide vapor phase epitaxy(HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc.HVPE is a non-organic chemical vapor deposition(CVD) technique, characterized by high quality growth of epitaxial layers with fast growth rate, which is versatile for the fabrication of both substrates and devices with wide applications. In this paper, we review the usage of HVPE for the growth and device applications of Ga_2O_3, with detailed discussions on a variety of technological aspects of HVPE. It is concluded that HVPE is a promising candidate for the epitaxy of large-area Ga_2O_3 substrates and for the fabrication of high power β-Ga_2O_3 devices.
基金Acknowledgement Financial support from the National Natural Science Founda-tion of China(Nps.21871053 and 21532001)is gratefully ack-nowledged.
文摘Summary of main observation and conclusion Sulfonylation of alkenes through photoredox-catalyzed functionalization of alkenes with thiourea dioxide under visible-ight rradiation is achleved,The reaction of alkenes,thiourea dioxide and electropiles provides a green and fficient access to alkyl sul-fones and sulfonamides.A broad reaction scope is presented with good functional group compat bility and excellent regiaselectivity.A plausible mecha-nism involving a radical addition process with sulfur dioxide rpdical anion(SO2-)derived from the oxidation of sulfur dioxide anion(S02^-2) is proposed,which is supported by fluorescence quenching experiments.
