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Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz
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作者 Guoxuan Qin Mengmeng Jin +4 位作者 Guoping Tu yuexing yan Laichun yang yanmeng Xu Jianguo Ma 《Transactions of Tianjin University》 EI CAS 2017年第2期168-175,共8页
A 0.18 μm CMOS low noise amplifier(LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching... A 0.18 μm CMOS low noise amplifier(LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching and reduce power consumption. The core size of the proposed CMOS LNA circuit without inductor was only 128 μm 9226 μm. The measured power gain and noise figure of the proposed LNA were 20.6 and 1.9 dB,respectively. The 3-dB bandwidth covers frequency from 0.1 to 1.2 GHz. When the chip was operated at a supply voltage of 1.8 V, it consumed 25.69 mW. The high performance of the proposed LNA makes it suitable for multistandard low-cost receiver front-ends within the above frequency range. 展开更多
关键词 CMOS Low noise AMPLIFIER (LNA) MULTIBAND Noise-canceling Self-bias wide band
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