Currently, Nanjing South Railway Stationplanning to implement slate roof renovation is integratingsolar cell modules into traditional roof materials to generateclean energy. Copper–indium–gallium diselenide（CuIn1-x...Currently, Nanjing South Railway Stationplanning to implement slate roof renovation is integratingsolar cell modules into traditional roof materials to generateclean energy. Copper–indium–gallium diselenide（CuIn1-xGaxSe2, CIGS） is one of the most promisingmaterials for thin film solar cells. Cu（In1-xGax）Se2 filmswere deposited by a one-step radio frequency magnetronsputtering process at low substrate temperature. X-raydiffraction, Raman, scanning electron microscopy, energydispersiveX-ray spectroscopy, and electrical and opticalmeasurements were carried out to investigate the depositedfilms. The results reveal that a temperature of 320 C iscritical for near-stoichiometric CIGS films with uniformsurface morphology. Cu-rich phase particulates are foundat less than this temperature. The sample deposited at380 C gives well-crystalline single-phase CIGS film.Furthermore, the electrical and optical performances of theabsorber layer are improved significantly with theincreasing substrate temperature.展开更多
基金financial supports of the Foundation of National Magnetic Confinement Fusion Science Program (No. 2011GB112001)the Program of International S&T Cooperation (No. 2013DFA51050)+1 种基金the NationalNatural Science Foundation of China (No. 51271155, 51377138)the Science Foundation of Sichuan Province (Nos. 2011JY0031 and 2011JY0130)
文摘Currently, Nanjing South Railway Stationplanning to implement slate roof renovation is integratingsolar cell modules into traditional roof materials to generateclean energy. Copper–indium–gallium diselenide（CuIn1-xGaxSe2, CIGS） is one of the most promisingmaterials for thin film solar cells. Cu（In1-xGax）Se2 filmswere deposited by a one-step radio frequency magnetronsputtering process at low substrate temperature. X-raydiffraction, Raman, scanning electron microscopy, energydispersiveX-ray spectroscopy, and electrical and opticalmeasurements were carried out to investigate the depositedfilms. The results reveal that a temperature of 320 C iscritical for near-stoichiometric CIGS films with uniformsurface morphology. Cu-rich phase particulates are foundat less than this temperature. The sample deposited at380 C gives well-crystalline single-phase CIGS film.Furthermore, the electrical and optical performances of theabsorber layer are improved significantly with theincreasing substrate temperature.
