we have developed ferroelectric capacitor fabrication technique to realize low-voltage and high-density ferroelectric random access memory （FRAM）. High temperature deposited IrOxtop electrode reveals high crystallin...we have developed ferroelectric capacitor fabrication technique to realize low-voltage and high-density ferroelectric random access memory （FRAM）. High temperature deposited IrOxtop electrode reveals high crystalline quality which drastically reduces the degradation of ferroelectric film by preventing hydrogen diffusion into ferroelectric film. This improvement enables us to commercialize highly-reliable 1T 1C FRAM with memory density of 4 Mb or larger.展开更多
文摘we have developed ferroelectric capacitor fabrication technique to realize low-voltage and high-density ferroelectric random access memory （FRAM）. High temperature deposited IrOxtop electrode reveals high crystalline quality which drastically reduces the degradation of ferroelectric film by preventing hydrogen diffusion into ferroelectric film. This improvement enables us to commercialize highly-reliable 1T 1C FRAM with memory density of 4 Mb or larger.
