Poly(arylene ether nitrile)Dielectric Film Modified by Bi_(2)S_(3)/rGO-CN Fillers for High Temperature Resistant Electronics Fields

High-quality film capacitors are widely used in many fields such as new energy vehicles,electronic communications,etc.,due to their advantages in wide frequency response and low dielectric loss.The dielectric film is a crucial part of the film capacitor,and its properties have an important impact on the performance and use conditions of the film capacitor.In this work,a novel high-temperature-resistant dielectric film was prepared.Firstly,the Bi_(2)S_(3)/rGO-CN fillers were prepared by hydrothermal method combined with cyanation treatment,and then added to the poly(arylene ether nitrile)(PEN)matrix to prepare the dielectric film materials(PEN/Bi_(2)S_(3)/rGO-CN).After high temperature treatment,the fillers Bi_(2)S_(3)/rGO-CN reacted with the PEN matrix,and the composites materials transformed into a thermosetting hybrid film(PEN-Bi_(2)S_(3)/rGO)with gel content of 97.88%.The prepared hybrid dielectric films did not decompose significantly before 400℃,and showed a glass transition temperature(Tg)of up to 252.4℃,which could increase the effective use temperature of the materials.Compared with the composite films without heat treatment,they exhibit better mechanical properties,with further improvement in tensile strength and elastic modulus,and a decrease in elongation at break.The dielectric constant of the hybrid films can be up to 6.8 while the dielectric loss is only about 0.02 at 1 kHz.Moreover,the hybrid films showed excellent dielectric stability during temperature changes,and remain relatively stable before 250℃,which is suitable as a high-temperature-resistant high-dielectric material and is more advantageous for practical applications.