Transition metal oxides have attracted intense interest owing to their abundant physical and chemical properties.The controlled preparation of large-area,high-quality two-dimensional crystals is essential for revealin...Transition metal oxides have attracted intense interest owing to their abundant physical and chemical properties.The controlled preparation of large-area,high-quality two-dimensional crystals is essential for revealing their inherent properties and realizing high-performance devices.However,fabricating two-dimensional(2D)transition metal oxides using a general approach still presents substantial challenges.Herein,we successfully achieve highly crystalline nickel oxide(NiO)flakes with a thickness as thin as 3.3 nm through the salt-assisted vapor-liquid-solid(VLS)growth method,which demonstrated exceptional stability under ambient conditions.To explore the great potential of the NiO crystal in this work,an artificial synapse based on the NiO-flake resistive switching(RS)layer is investigated.Short-term and long-term synaptic behaviors are obtained with external stimuli.The artificial synaptic performance provides the foundation of the neuromorphic application,including handwriting number recognition based on artificial neuron network(ANN)and the virtually unsupervised learning capability based on generative adversarial network(GAN).This pioneering work not only paves new paths for the synthesis of 2D oxides in the future but also demonstrates the substantial potential of oxides in the field of neuromorphic computing.展开更多
Two-dimensional(2D)indium arsenide(InAs)is promising for future electronic and optoelectronic applications such as highperformance nanoscale transistors,flexible and wearable devices,and high-sensitivity broadband pho...Two-dimensional(2D)indium arsenide(InAs)is promising for future electronic and optoelectronic applications such as highperformance nanoscale transistors,flexible and wearable devices,and high-sensitivity broadband photodetectors,and is advantageous for its heterogeneous integration with Si-based electronics.However,the synthesis of 2D InAs single crystals is challenging because of the nonlayered structure.Here we report the van der Waals epitaxy of 2D InAs single crystals,with their thickness down to 4.8 nm,and their lateral sizes up to~37μm.The as-grown InAs flakes have high crystalline quality and are homogenous.The thickness can be tuned by growth time and temperature.Moreover,we explore the thickness-dependent optical properties of InAs flakes.Transports measurement reveals that 2D InAs possesses high conductivity and high carrier mobility.Our work introduces InAs to 2D materials family and paves the way for applying 2D InAs in high-performance electronics and optoelectronics.展开更多
Solid-state batteries(SSBs)are attracting growing interest as long-lasting,thermally resilient,and high-safe energy storage systems.As an emerging area of battery chemistry,there are many issues with SSBs,including st...Solid-state batteries(SSBs)are attracting growing interest as long-lasting,thermally resilient,and high-safe energy storage systems.As an emerging area of battery chemistry,there are many issues with SSBs,including strongly reductive lithium anodes,oxidized cathodes(state of charge),the thermodynamic stability limits of solid-state electrolytes(SSEs),and the ubiquitous and critical interfaces.In this Review,we provided an overview of the main obstacles in the development of SSBs,such as the lithium anode|SSEs interface,the cathode|SSEs interface,lithium-ion transport in the SSEs,and the root origin of lithium intrusions,as well as the safety issues caused by the dendrites.Understanding and overcoming these obstacles are crucial but also extremely challenging as the localized and buried nature of the intimate contact between electrode and SSEs makes direct detection difficult.We reviewed advanced characterization techniques and discussed the complex ion/electron-transport mechanism that have been plaguing electrochemists.Finally,we focused on studying and revealing the coupled electro-chemo-mechanical behavior occurring in the lithium anode,cathode,SSEs,and beyond.展开更多
基金support from the Jiangsu Funding Program for Excellent Postdoctoral Talent,the National Natural Science Foundation of China(No.52372055)the Jiangsu Independent Innovation Fund Project of Agricultural Science and Technology(No.CX(21)3163).
文摘Transition metal oxides have attracted intense interest owing to their abundant physical and chemical properties.The controlled preparation of large-area,high-quality two-dimensional crystals is essential for revealing their inherent properties and realizing high-performance devices.However,fabricating two-dimensional(2D)transition metal oxides using a general approach still presents substantial challenges.Herein,we successfully achieve highly crystalline nickel oxide(NiO)flakes with a thickness as thin as 3.3 nm through the salt-assisted vapor-liquid-solid(VLS)growth method,which demonstrated exceptional stability under ambient conditions.To explore the great potential of the NiO crystal in this work,an artificial synapse based on the NiO-flake resistive switching(RS)layer is investigated.Short-term and long-term synaptic behaviors are obtained with external stimuli.The artificial synaptic performance provides the foundation of the neuromorphic application,including handwriting number recognition based on artificial neuron network(ANN)and the virtually unsupervised learning capability based on generative adversarial network(GAN).This pioneering work not only paves new paths for the synthesis of 2D oxides in the future but also demonstrates the substantial potential of oxides in the field of neuromorphic computing.
基金supported by the National Key Basic Research Program of China(No.2021YFA1401400)the start-up funds of Shanghai Jiao Tong University,the National Natural Science Foundation of China(Nos.52103344,52031014,22022507,and 51973111)+1 种基金the National Key Research and Development Program of China(No.2017YFA0206301)Beijing National Laboratory for Molecular Sciences(No.BNLMS202004).
文摘Two-dimensional(2D)indium arsenide(InAs)is promising for future electronic and optoelectronic applications such as highperformance nanoscale transistors,flexible and wearable devices,and high-sensitivity broadband photodetectors,and is advantageous for its heterogeneous integration with Si-based electronics.However,the synthesis of 2D InAs single crystals is challenging because of the nonlayered structure.Here we report the van der Waals epitaxy of 2D InAs single crystals,with their thickness down to 4.8 nm,and their lateral sizes up to~37μm.The as-grown InAs flakes have high crystalline quality and are homogenous.The thickness can be tuned by growth time and temperature.Moreover,we explore the thickness-dependent optical properties of InAs flakes.Transports measurement reveals that 2D InAs possesses high conductivity and high carrier mobility.Our work introduces InAs to 2D materials family and paves the way for applying 2D InAs in high-performance electronics and optoelectronics.
基金supported by the research fund of Shenzhen Science and Technology Innovation Committee(SGDX20201103093600003)the University of Macao,Macao SAR(MYRG2018-00079-IAPME and MYRG2019-00115-IAPME)+2 种基金the Science and Technology Development Fund,Macao SAR(0092/2019/A2,0059/2018/A2,and 009/2017/AMJ)the National Thousand Young Talent planthe National Natural Science Foundation of China(21875040&21905051)。
基金Talent Scientific Research Project of Qilu University of Technology,Grant/Award Number:2023RCKY181Natural Science Foundation of Shandong Province Youth Project,Grant/Award Number:ZR2022QB178 ZR2020QB197+3 种基金National Natural Science Foundation of China,Grant/Award Numbers:52272136,22108135Natural Science Foundation of Jiangsu province,Grant/Award Number:BK20221402Special Support of China Postdoctoral Science Founudation,Grant/Award Number:2023T160471Basic Research Project of Science,Education and Production Integration Pilot Project。
文摘Solid-state batteries(SSBs)are attracting growing interest as long-lasting,thermally resilient,and high-safe energy storage systems.As an emerging area of battery chemistry,there are many issues with SSBs,including strongly reductive lithium anodes,oxidized cathodes(state of charge),the thermodynamic stability limits of solid-state electrolytes(SSEs),and the ubiquitous and critical interfaces.In this Review,we provided an overview of the main obstacles in the development of SSBs,such as the lithium anode|SSEs interface,the cathode|SSEs interface,lithium-ion transport in the SSEs,and the root origin of lithium intrusions,as well as the safety issues caused by the dendrites.Understanding and overcoming these obstacles are crucial but also extremely challenging as the localized and buried nature of the intimate contact between electrode and SSEs makes direct detection difficult.We reviewed advanced characterization techniques and discussed the complex ion/electron-transport mechanism that have been plaguing electrochemists.Finally,we focused on studying and revealing the coupled electro-chemo-mechanical behavior occurring in the lithium anode,cathode,SSEs,and beyond.
