Exploring novel two-dimensional(2D)valleytronic materials has an essential impact on the design of spintronic and valleytronic devices.Our first principles calculation results reveal that the Janus SWSiX_(2)(X=N,P,As)...Exploring novel two-dimensional(2D)valleytronic materials has an essential impact on the design of spintronic and valleytronic devices.Our first principles calculation results reveal that the Janus SWSiX_(2)(X=N,P,As)monolayer has excellent dynamical and thermal stability.Owing to strong spin–orbit coupling(SOC),the SWSiX_(2)monolayer exhibits a valence band spin splitting of up to 0.49 eV,making it promising 2D semiconductor for valleytronic applications.The opposite Berry curvatures and optical selection rules lead to the coexistence of valley and spin Hall effects in the SWSiX2 monolayer.Moreover,the optical transition energies can be remarkably modulated by the in-plane strains.Large tensile(compressive)in-plane strains can achieve spin flipping in the SWSiN2 monolayer,and induce both SWSiP_(2)and SWSiAs_(2)monolayers transit from semiconductor to metal.Our research provides new 2D semiconductor candidates for designing high-performance valleytronic devices.展开更多
基金the National Natural Science Foundation of China(Grant Nos.62174088 and 62371238)。
文摘Exploring novel two-dimensional(2D)valleytronic materials has an essential impact on the design of spintronic and valleytronic devices.Our first principles calculation results reveal that the Janus SWSiX_(2)(X=N,P,As)monolayer has excellent dynamical and thermal stability.Owing to strong spin–orbit coupling(SOC),the SWSiX_(2)monolayer exhibits a valence band spin splitting of up to 0.49 eV,making it promising 2D semiconductor for valleytronic applications.The opposite Berry curvatures and optical selection rules lead to the coexistence of valley and spin Hall effects in the SWSiX2 monolayer.Moreover,the optical transition energies can be remarkably modulated by the in-plane strains.Large tensile(compressive)in-plane strains can achieve spin flipping in the SWSiN2 monolayer,and induce both SWSiP_(2)and SWSiAs_(2)monolayers transit from semiconductor to metal.Our research provides new 2D semiconductor candidates for designing high-performance valleytronic devices.
