In vivo activities of the structured lipids-1,3-dioleic acid 2-palmitic acid triglyceride(OPO)in high-fat diet mice

High-energy diets and lipid metabolism can lead to high levels of total cholesterol,a decrease in antioxidant,enzyme activity,and an increase in oxidative stress and dyslipidemia biomarker.In this study,the in vivo antihyperlipidemic and antioxidant effects of 1,3-dioleoyl-2-palmitoyl triglyceride(OPO)using a high fat-diet model were investigated.The mice were divided into groups including high-fat model group(HF),auxiliary group(AG),positive Control group(PC),low OPO dose group(LO),medium OPO dose group(MO)and high OPO.OPO was administrated to 60 hyperlipidemia induced male Kunming mice at the dosage of 200,400 and 800 mg/kg•d body weight,for 35 days.The results showed that the administration of OPO decreased the body weight from 43.92 g in HF to 37.74 g in HO group,liver index from 3.94%in HF to 3.43 in HO group and kidney index from 1.38 in HF%to 1.17%in HO group.The administration of OPO significantly decreased hyperlipidemia mice's serum triglyceride,total cholesterol,and low-density lipoprotein cholesterol levels at P<0.05.High-density lipoprotein cholesterol levels were increased with reductions of visceral hypertrophy and fat accumulation in model mice.Furthermore,in the HO group,superoxide dismutase,catalase and glutathione peroxidase levels increased significantly by 27.39,38.33 and 22.90%at(P<0.05),respectively.OPO also significantly reduced the enzyme activity of aspartate aminotransferase and alanine aminotransferase in serum at P<0.05.These findings suggested that OPO has potential use in hyperlipidemia treatment and other health-related complications.

Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors

Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnace. The optical characteristics of the Zn-diffused InP layer for the planar-type InGaAs/InP PIN photodetectors grown by molecular beam epitaxy （MBE） has been investigated by photoluminescence （PL） measurements. The temperature-dependent PL spectrum of Zn-diffused InP samples at different diffusion temperatures showed that band-to-acceptor transition dominates the PL emission, which indicates that Zn was commendably diffused into InP layer as the acceptor. High quality Zn-diffused InP layer with typically smooth surface was obtained at 580 ℃for 10 min. Furthermore, more interstitial Zn atoms were activated to act as acceptors after a rapid annealing process. Based on the above Zn-diffusion technique, a 50μm planar-type InGaAs/InP PIN photodector device was fabricated and exhibited a low dark current of 7.73 pA under a reverse bias potential of -5 V and a high break- down voltage of larger than 41 V （1 〈 10μA）. In addition, a high responsivity of 0.81 A/W at 1.31/~m and 0.97 A/W at 1.55μm was obtained in the developed PIN photodetector.