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Electronic structures and Mott state of epitaxial TaS_(2) monolayers
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作者 Qichao Tian Chi Ding +7 位作者 Xiaodong Qiu Qinghao Meng Kaili Wang Fan Yu yuyang mu Can Wang Jian Sun Yi Zhang 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2024年第5期91-97,共7页
Layered material TaS2hosts multiple structural phases and exotic correlated quantum states,including charge density wave(CDW),superconductivity,quantum spin liquid,and Mott insulating state.Here,we synthesized TaS_(2)... Layered material TaS2hosts multiple structural phases and exotic correlated quantum states,including charge density wave(CDW),superconductivity,quantum spin liquid,and Mott insulating state.Here,we synthesized TaS_(2)monolayers in H and T phases using the molecular beam epitaxial(MBE)method and studied their electronic structures via angle-resolved photoemission spectroscopy(ARPES).We found that the H phase TaS_(2)(H-TaS_(2))monolayer is metallic,with an energy band crossing the Fermi level.In contrast,the T phase TaS_(2)(T-TaS_(2))monolayer shows an insulated energy gap at the Fermi level,while the normal calculated band structure implies it should be metallic without any band gap.However,by considering Hubbard interaction potential U,further density functional theory(DFT)calculation suggests that monolayer T-TaS_(2)could be a CDW Mott insulator,and the DFT+U calculation matches well with the ARPES result.More significantly,the temperature-dependent ARPES result indicates that the CDW Mott state in the T-TaS_(2)monolayer is more robust than its bulk counterpart and can persist at room temperature.Our results reveal that the dimensional effect can enhance the CDW Mott state and provide valuable insights for further exploring the exotic properties of monolayer TaS2. 展开更多
关键词 temperature MONOLAYER STATE
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通过调控范霍夫奇点在外延单层VSe_(2)中诱导出巡游铁磁性
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作者 宗君宇 董召阳 +17 位作者 黄俊伟 王开礼 汪琪玮 孟庆豪 田启超 邱小东 牟浴洋 王利 任伟 谢学栋 陈望 张永衡 王灿 李坊森 李绍春 李建新 袁洪涛 张翼 《Science Bulletin》 SCIE EI CAS CSCD 2023年第10期990-997,M0003,共9页
处在费米能级处的范霍夫奇点(van Hove singularity)由于具有发散的态密度特征可以诱导出巡游铁磁性.本文在SrTiO_(3)(111)衬底上外延生长单层VSe_(2)薄膜,并通过调控范霍夫奇点诱导出巡游铁磁性.作者通过角分辨光电子能谱技术直接观测... 处在费米能级处的范霍夫奇点(van Hove singularity)由于具有发散的态密度特征可以诱导出巡游铁磁性.本文在SrTiO_(3)(111)衬底上外延生长单层VSe_(2)薄膜,并通过调控范霍夫奇点诱导出巡游铁磁性.作者通过角分辨光电子能谱技术直接观测到了单层VSe_(2)中的范霍夫奇点能带结构.理论计算表明,当该范霍夫奇异点靠近费米能级时,可通过斯通纳(Stoner)不稳定性产生巡游铁磁性.实验上,作者利用SrTiO_(3)(111)在低温下极大增强的介电常数εr,通过界面电荷转移效应调控范霍夫奇点向费米能级处移动,并通过电输运测量观测到了3.3 K的巡游铁磁性转变.此外,通过改变薄膜层厚和更换衬底的方式,作者可以进一步调控界面电荷转移效果和范霍夫奇点的能量位置,并对巡游铁磁性进行调控.这项研究证明了范霍夫奇点可以成为巡游铁磁性的调控自由度,并拓展了二维磁体在未来电子信息技术的应用潜力. 展开更多
关键词 2D itinerant ferromagnetism Monolayer1T-VSe_(2)Van Hove singularity Molecularbeam epitaxy Angle-resolved photoemission spectroscopy ELECTRONICTRANSPORT
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