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Anisotropic Magnon–Magnon Coupling in Synthetic Antiferromagnets
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作者 Wei He ZKXie +8 位作者 Rui Sun Meng Yang Yang Li Xiao-Tian Zhao Wei Liu z.d.zhang Jian-Wang Cai Zhao-Hua Cheng Jie Lu 《Chinese Physics Letters》 SCIE CAS CSCD 2021年第5期137-142,共6页
Magnon-magnon coupling in synthetic antiferromagnets advances it as hybrid magnonic systems to explore the quantum information technologies.To induce magnon-magnon coupling,the parity symmetry between two magnetizatio... Magnon-magnon coupling in synthetic antiferromagnets advances it as hybrid magnonic systems to explore the quantum information technologies.To induce magnon-magnon coupling,the parity symmetry between two magnetization needs to be broken.Here we experimentally demonstrate a convenient method to break the parity symmetry by the asymmetric structure.We successfully introduce a magnon-magnon coupling in Ir-based synthetic antiferromagnets CoFeB(10 nm)/Ir(t_(Ir)=0.6 nm,1.2 nm)/CoFeB(13 nm).Remarkably,we find that the weakly uniaxial anisotropy field(-20 Oe)makes the magnon-magnon coupling anisotropic.The coupling strength presented by a characteristic anticrossing gap varies in the range between 0.54 GHz and 0.90 GHz for t_(Ir)=0.6 nm,and between 0.09 GHz and 1.4 GHz for t_(Ir)=1.2 nm.Our results demonstrate a feasible way to induce magnon-magnon coupling by an asymmetric structure and tune the coupling strength by varying the direction of in-plane magnetic field.The magnon-magnon coupling in this highly tunable material system could open exciting perspectives for exploring quantum-mechanical coupling phenomena. 展开更多
关键词 NET RED Magnon Coupling in Synthetic Antiferromagnets Anisotropic Magnon
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EFFECTS OF HDDR PROCESS ON STRUCTURE AND MAGNETIC PROPERTIES OF Nd(Fe,Ti)_(12)N_δ PREPARED BY MECHANICAL ALLOYING
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作者 B.ZCui X.K.Sun +5 位作者 X.G.Zhao W.Liu Q.F.Xiao T.Zhao z.d.zhang Y.C.Sui 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 1998年第1期68-78,共11页
The effects of the hydrogenation-disproportionation-desorption-recombination (HDDR) process on the structure and the magnetic properties of the mechanical alloying (MA) prepared Nd8Fe84 Ti8 alloy and its nitride count... The effects of the hydrogenation-disproportionation-desorption-recombination (HDDR) process on the structure and the magnetic properties of the mechanical alloying (MA) prepared Nd8Fe84 Ti8 alloy and its nitride counterpart have been studied in detail. It has been found that Nd(Fe, Ti)12Hδ is formed in the temperature range from 300 to 550°℃. The disproportionation is ready to start at 550°℃ and is complete at 960°℃.The desorption and the recombination are almost synchronized. The phase of Nd(Fe,Ti)7 is formed at 750°℃ during the HDDR treatment. With increasing temperature of HDDR process, the metastable structure of TbCu7 type is gradually transformed into the structure of ThMn12 type. The intrinsic coercivity and the maximum magnetic energy product increase with increasing temperature of HDDR process. 展开更多
关键词 Nd(Fe Ti)_(12)N_δ compound magnetic property hydrogenation
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Amplitude analysis of the decays D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)
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作者 M.Ablikim M.N.Achasov +642 位作者 P.Adlarson O.Afedulidis X.C.Ai R.Aliberti A.Amoroso Q.An Y.Bai O.Bakina I.Balossino Y.Ban H.-R.Bao V.Batozskaya K.Begzsuren N.Berger M.Berlowski M.Bertani D.Bettoni F.Bianchi E.Bianco A.Bortone I.Boyko R.A.Briere A.Brueggemann H.Cai X.Cai A.Calcaterra G.F.Cao N.Cao S.A.Cetin J.F.Chang W.L.Chang G.R.Che G.Chelkov C.Chen C.H.Chen Chao Chen G.Chen H.S.Chen M.L.Chen S.J.Chen S.L.Chen S.M.Chen T.Chen X.R.Chen X.T.Chen Y.B.Chen Y.Q.Chen Z.J.Chen Z.Y.Chen S.K.Choi X.Chu G.Cibinetto F.Cossio J.J.Cui H.L.Dai J.P.Dai A.Dbeyssi R.E.de Boer D.Dedovich C.Q.Deng Z.Y.Deng A.Denig I.Denysenko M.Destefanis F.De Mori B.Fang S.S.Fang W.X.Fang Y.Fang Y.Q.Fang R.Farinelli L.Fava F.Feldbauer G.Felici C.Q.Feng J.H.Feng Y.T.Feng K.Fischer M.Fritsch C.D.Fu J.L.Fu Y.W.Fu H.Gao Y.N.Gao Yang Gao S.Garbolino I.Garzia P.T.Ge Z.W.Ge C.Geng E.M.Gersabeck B.Ding X.X.Ding Y.Ding Y.Ding J.Dong L.Y.Dong M.Y.Dong X.Dong M.C.Du S.X.Du Z.H.Duan P.Egorov Y.H.Fan J.Fang JA.Gilman K.Goetzen L.Gong W.X.Gong W.Gradl S.Gramigna M.Greco M.H.Gu Y.T.Gu C.Y.Guan Z.L.Guan A.Q.Guo L.B.Guo M.J.Guo R.P.Guo Y.P.Guo A.Guskov J.Gutierrez K.L.Han T.T.Han X.Q.Hao F.A.Harris K.K.He K.L.He F.H.Heinsius C.H.Heinz Y.K.Heng C.Herold T.Holtmann P.C.Hong G.Y.Hou X.T.Hou Y.R.Hou Z.L.Hou B.Y.Hu H.M.Hu J.F.Hu T.Hu Y.Hu G.S.Huang K.X.Huang L.Q.Huang X.T.Huang Y.P.Huang T.Hussain F.H\"olzken N.H\"usken N.in der Wiesche M.Irshad J.Jackson S.Janchiv J.H.Jeong Q.Ji Q.P.Ji W.Ji X.B.Ji X.L.Ji Y.Y.Ji X.Q.Jia Z.K.Jia D.Jiang H.B.Jiang P.C.Jiang S.S.Jiang T.J.Jiang X.S.Jiang Y.Jiang J.B.Jiao J.K.Jiao Z.Jiao S.Jin Y.Jin M.Q.Jing X.M.Jing T.Johansson S.Kabana N.Kalantar-Nayestanaki X.L.Kang X.S.Kang M.Kavatsyuk B.C.Ke V.Khachatryan A.Khoukaz R.Kiuchi O.B.Kolcu B.Kopf M.Kuessner X.Kui A.Kupsc W.K\"uhn J.J.Lane P.Larin L.Lavezzi T.T.Lei Z.H.Lei H.Leithoff M.Lellmann T.Lenz C.Li C.Li C.H.Li Cheng Li D.M.Li F.Li G.Li H.Li H.B.Li H.J.Li H.N.Li Hui Li J.R.Li J.S.Li K.Li L.J.Li L.K.Li Lei Li M.H.Li P.R.Li Q.M.Li Q.X.Li R.Li S.X.Li T.Li W.D.Li W.G.Li X.Li X.H.Li X.L.Li X.Y.Li Y.G.Li Z.J.Li Z.X.Li C.Liang H.Liang H.Liang Y.F.Liang Y.T.Liang G.R.Liao L.Z.Liao Y.P.Liao J.Libby A.Limphirat D.X.Lin T.Lin B.J.Liu B.X.Liu C.Liu C.X.Liu F.Liu F.H.Liu Feng Liu G.M.Liu H.Liu H.B.Liu H.H.Liu H.M.Liu Huihui Liu J.B.Liu J.Y.Liu K.Liu K.Y.Liu Ke Liu L.Liu L.C.Liu Lu Liu M.H.Liu P.L.Liu Q.Liu S.B.Liu T.Liu W.K.Liu W.M.Liu X.Liu X.Liu Y.Liu Y.Liu Y.B.Liu Z.A.Liu Z.D.Liu Z.Q.Liu X.C.Lou F.X.Lu H.J.Lu J.G.Lu X.L.Lu Y.Lu Y.P.Lu Z.H.Lu C.L.Luo M.X.Luo T.Luo X.L.Luo X.R.Lyu Y.F.Lyu F.C.Ma H.Ma H.L.Ma J.L.Ma L.L.Ma M.M.Ma Q.M.Ma R.Q.Ma X.T.Ma X.Y.Ma Y.Ma Y.M.Ma F.E.Maas M.Maggiora S.Malde A.Mangoni Y.J.Mao Z.P.Mao S.Marcello Z.X.Meng J.G.Messchendorp G.Mezzadri H.Miao T.J.Min R.E.Mitchell X.H.Mo B.Moses N.Yu.Muchnoi J.Muskalla Y.Nefedov F.Nerling I.B.Nikolaev Z.Ning S.Nisar Q.L.Niu W.D.Niu Y.Niu S.L.Olsen Q.Ouyang S.Pacetti X.Pan Y.Pan A.Pathak P.Patteri Y.P.Pei M.Pelizaeus H.P.Peng Y.Y.Peng K.Peters J.L.Ping R.G.Ping S.Plura V.Prasad F.Z.Qi H.Qi H.R.Qi M.Qi T.Y.Qi S.Qian W.B.Qian C.F.Qiao J.J.Qin L.Q.Qin X.S.Qin Z.H.Qin J.F.Qiu S.Q.Qu Z.H.Qu C.F.Redmer K.J.Ren A.Rivetti M.Rolo G.Rong Ch.Rosner S.N.Ruan N.Salone A.Sarantsev Y.Schelhaas K.Schoenning M.Scodeggio K.Y.Shan W.Shan X.Y.Shan J.F.Shangguan L.G.Shao M.Shao C.P.Shen H.F.Shen W.H.Shen X.Y.Shen B.A.Shi H.C.Shi J.L.Shi J.Y.Shi Q.Q.Shi R.S.Shi S.Y.Shi X.Shi X.D.Shi J.J.Song T.Z.Song W.M.Song Y.J.Song Y.X.Song S.Sosio S.Spataro F.Stieler Y.J.Su G.B.Sun G.X.Sun H.Sun H.K.Sun J.F.Sun K.Sun L.Sun S.S.Sun T.Sun W.Y.Sun Y.Sun Y.J.Sun Y.Z.Sun Z.Q.Sun Z.T.Sun C.J.Tang G.Y.Tang J.Tang Y.A.Tang L.Y.Tao Q.T.Tao M.Tat J.X.Teng V.Thoren W.H.Tian Y.Tian Z.F.Tian I.Uman Y.Wan S.J.Wang B.Wang B.L.Wang Bo Wang D.Y.Wang F.Wang H.J.Wang J.P.Wang K.Wang L.L.Wang M.Wang Meng Wang N.Y.Wang S.Wang S.Wang T.Wang T.J.Wang W.Wang W.Wang W.P.Wang X.Wang X.F.Wang X.J.Wang X.L.Wang X.N.Wang Y.Wang Y.D.Wang Y.F.Wang Y.L.Wang Y.N.Wang Y.Q.Wang Yaqian Wang Yi Wang Z.Wang Z.L.Wang Z.Y.Wang Ziyi Wang D.Wei D.H.Wei F.Weidner S.P.Wen Y.R.Wen U.Wiedner G.Wilkinson M.Wolke L.Wollenberg C.Wu J.F.Wu L.H.Wu L.J.Wu X.Wu X.H.Wu Y.Wu Y.H.Wu Y.J.Wu Z.Wu L.Xia X.M.Xian B.H.Xiang T.Xiang D.Xiao G.Y.Xiao S.Y.Xiao Y.L.Xiao Z.J.Xiao C.Xie X.H.Xie Y.Xie Y.G.Xie Y.H.Xie Z.P.Xie T.Y.Xing C.F.Xu C.J.Xu G.F.Xu H.Y.Xu Q.J.Xu Q.N.Xu W.Xu W.L.Xu X.P.Xu Y.C.Xu Z.P.Xu Z.S.Xu F.Yan L.Yan W.B.Yan W.C.Yan X.Q.Yan H.J.Yang H.L.Yang H.X.Yang T.Yang Y.Yang Y.F.Yang Y.F.Yang Y.X.Yang Z.W.Yang Z.P.Yao M.Ye M.H.Ye J.H.Yin Z.Y.You B.X.Yu C.X.Yu G.Yu J.S.Yu T.Yu X.D.Yu C.Z.Yuan J.Yuan L.Yuan S.C.Yuan Y.Yuan Z.Y.Yuan C.X.Yue A.A.Zafar F.R.Zeng S.H.Zeng X.Zeng Y.Zeng Y.J.Zeng Y.J.Zeng X.Y.Zhai Y.C.Zhai Y.H.Zhan A.Q.Zhang B.L.Zhang B.X.Zhang D.H.Zhang G.Y.Zhang H.Zhang H.C.Zhang H.H.Zhang H.H.Zhang H.Q.Zhang H.Y.Zhang J.Zhang J.Zhang J.J.Zhang J.L.Zhang J.Q.Zhang J.W.Zhang J.X.Zhang J.Y.Zhang J.Z.Zhang Jianyu Zhang L.M.Zhang Lei Zhang P.Zhang Q.Y.Zhang S.H.Zhang Shulei Zhang X.D.Zhang X.M.Zhang X.Y.Zhang Y.Zhang Y.Zhang Y.T.Zhang Y.H.Zhang Y.M.Zhang Yan Zhang z.d.zhang Z.H.Zhang Z.L.Zhang Z.Y.Zhang Z.Y.Zhang G.Zhao J.Y.Zhao J.Z.Zhao L.Zhao Lei Zhao M.G.Zhao R.P.Zhao S.J.Zhao Y.B.Zhao Y.X.Zhao Z.G.Zhao A.Zhemchugov B.Zheng J.P.Zheng W.J.Zheng Y.H.Zheng B.Zhong X.Zhong H.Zhou J.Y.Zhou L.P.Zhou X.Zhou X.K.Zhou X.R.Zhou X.Y.Zhou Y.Z.Zhou J.Zhu K.Zhu K.J.Zhu L.Zhu L.X.Zhu S.H.Zhu S.Q.Zhu T.J.Zhu W.D.Zhu Y.C.Zhu Z.A.Zhu J.H.Zou J.Zu 《Chinese Physics C》 SCIE CAS CSCD 2024年第8期6-33,共28页
Using e^(+)e^(−)annihilation data corresponding to an integrated luminosity of 2.93 fb^(−1)taken at the center-of-mass energy√s=3.773 GeV with the BESIII detector,a joint amplitude analysis is performed on the decays... Using e^(+)e^(−)annihilation data corresponding to an integrated luminosity of 2.93 fb^(−1)taken at the center-of-mass energy√s=3.773 GeV with the BESIII detector,a joint amplitude analysis is performed on the decays D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)(non-η).The fit fractions of individual components are obtained,and large interferences among the dominant components of the decays D^(0)→a_(1)(1260)π,D^(0)→π(1300)π,D^(0)→ρ(770)ρ(770),and D^(0)→2(ππ)_(S)are observed in both channels.With the obtained amplitude model,the CP-even fractions of D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)(non-η)are determined to be(75.2±1.1_(stat).±1.5_(syst.))%and(68.9±1.5_(stat).±2.4_(syst.))%,respectively.The branching fractions of D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)(non-η)are measured to be(0.688±0.010_(stat.)±0.010_(syst.))%and(0.951±0.025_(stat.)±0.021_(syst.))%,respectively.The amplitude analysis provides an important model for the binning strategy in measuring the strong phase parameters of D^(0)→4πwhen used to determine the CKM angleγ(ϕ_(3))via the B^(−)→DK^(−)decay. 展开更多
关键词 BESIII D^(0)meson decays amplitude analysis CP-even fraction
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Determination of the number ofψ(3686)events taken at BESⅢ
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作者 M.Ablikim M.N.Achasov +660 位作者 P.Adlarson O.Afedulidis X.C.Ai R.Aliberti A.Amoroso Q.An Y.Bai O.Bakina I.Balossino Y.Ban H.-R.Bao V.Batozskaya K.Begzsuren N.Berger M.Berlowski M.Bertani D.Bettoni F.Bianchi E.Bianco A.Bortone I.Boyko R.A.Briere A.Brueggemann H.Cai X.Cai A.Calcaterra G.F.Cao N.Cao S.A.Cetin J.F.Chang G.R.Che G.Chelkov C.Chen C.H.Chen Chao Chen G.Chen H.S.Chen H.Y.Chen M.L.Chen S.J.Chen S.L.Chen S.M.Chen T.Chen X.R.Chen X.T.Chen Y.B.Chen Y.Q.Chen Z.J.Chen Z.Y.Chen S.K.Choi G.Cibinetto F.Cossio J.J.Cui H.L.Dai J.P.Dai A.Dbeyssi R.E.de Boer D.Dedovich C.Q.Deng Z.Y.Deng A.Denig I.Denysenko M.Destefanis F.De Mori B.Ding X.X.Ding Y.Ding Y.Ding J.Dong L.Y.Dong M.Y.Dong X.Dong M.C.Du S.X.Du Y.Y.Duan Z.H.Duan P.Egorov Y.H.Fan J.Fang J.Fang S.S.Fang W.X.Fang Y.Fang Y.Q.Fang R.Farinelli L.Fava F.Feldbauer G.Felici C.Q.Feng J.H.Feng Y.T.Feng M.Fritsch C.D.Fu J.L.Fu Y.W.Fu H.Gao X.B.Gao Y.N.Gao Yang Gao S.Garbolino I.Garzia L.Ge P.T.Ge Z.W.Ge C.Geng E.M.Gersabeck A.Gilman K.Goetzen L.Gong W.X.Gong W.Gradl S.Gramigna M.Greco M.H.Gu Y.T.Gu C.Y.Guan Z.L.Guan A.Q.Guo L.B.Guo M.J.Guo R.P.Guo Y.P.Guo A.Guskov J.Gutierrez K.L.Han T.T.Han F.Hanisch X.Q.Hao F.A.Harris K.K.He K.L.He F.H.Heinsius C.H.Heinz Y.K.Heng C.Herold T.Holtmann P.C.Hong G.Y.Hou X.T.Hou Y.R.Hou Z.L.Hou B.Y.Hu H.M.Hu J.F.Hu S.L.Hu T.Hu Y.Hu G.S.Huang K.X.Huang L.Q.Huang X.T.Huang Y.P.Huang T.Hussain F.Hölzken N.Hüsken N.in der Wiesche J.Jackson S.Janchiv J.H.Jeong Q.Ji Q.P.Ji W.Ji X.B.Ji X.L.Ji Y.Y.Ji X.Q.Jia Z.K.Jia D.Jiang H.B.Jiang P.C.Jiang S.S.Jiang T.J.Jiang X.S.Jiang Y.Jiang J.B.Jiao J.K.Jiao Z.Jiao S.Jin Y.Jin M.Q.Jing X.M.Jing T.Johansson S.Kabana N.Kalantar-Nayestanaki X.L.Kang X.S.Kang M.Kavatsyuk B.C.Ke V.Khachatryan A.Khoukaz R.Kiuchi O.B.Kolcu B.Kopf M.Kuessner X.Kui N.Kumar A.Kupsc W.Kühn J.J.Lane P.Larin L.Lavezzi T.T.Lei Z.H.Lei M.Lellmann T.Lenz C.Li C.Li C.H.Li Cheng Li D.M.Li F.Li G.Li H.B.Li H.J.Li H.N.Li Hui Li J.R.Li J.S.Li Ke Li L.J.Li L.K.Li Lei Li M.H.Li P.R.Li Q.M.Li Q.X.Li R.Li S.X.Li T.Li W.D.Li W.G.Li X.Li X.H.Li X.L.Li X.Z.Li Xiaoyu Li Y.G.Li Z.J.Li Z.X.Li Z.Y.Li C.Liang H.Liang H.Liang Y.F.Liang Y.T.Liang G.R.Liao L.Z.Liao Y.P.Liao J.Libby A.Limphirat C.C.Lin D.X.Lin T.Lin B.J.Liu B.X.Liu C.Liu C.X.Liu F.H.Liu Fang Liu Feng Liu G.M.Liu H.Liu H.B.Liu H.M.Liu Huanhuan Liu Huihui Liu J.B.Liu J.Y.Liu K.Liu K.Y.Liu Ke Liu L.Liu L.C.Liu Lu Liu M.H.Liu P.L.Liu Q.Liu S.B.Liu T.Liu W.K.Liu W.M.Liu X.Liu X.Liu Y.Liu Y.Liu Y.B.Liu Z.A.Liu Z.D.Liu Z.Q.Liu X.C.Lou F.X.Lu H.J.Lu J.G.Lu X.L.Lu Y.Lu Y.P.Lu Z.H.Lu C.L.Luo J.R.Luo M.X.Luo T.Luo X.L.Luo X.R.Lyu Y.F.Lyu F.C.Ma H.Ma H.L.Ma J.L.Ma L.L.Ma M.M.Ma Q.M.Ma R.Q.Ma T.Ma X.T.Ma X.Y.Ma Y.Ma Y.M.Ma F.E.Maas M.Maggiora S.Malde Y.J.Mao Z.P.Mao S.Marcello Z.X.Meng J.G.Messchendorp G.Mezzadri H.Miao T.J.Min R.E.Mitchell X.H.Mo B.Moses N.Yu.Muchnoi J.Muskalla Y.Nefedov F.Nerling L.S.Nie I.B.Nikolaev Z.Ning S.Nisar Q.L.Niu W.D.Niu Y.Niu S.L.Olsen Q.Ouyang S.Pacetti X.Pan Y.Pan A.Pathak P.Patteri Y.P.Pei M.Pelizaeus H.P.Peng Y.Y.Peng K.Peters J.L.Ping R.G.Ping S.Plura V.Prasad F.Z.Qi H.Qi H.R.Qi M.Qi T.Y.Qi S.Qian W.B.Qian C.F.Qiao X.K.Qiao J.J.Qin L.Q.Qin L.Y.Qin X.S.Qin Z.H.Qin J.F.Qiu Z.H.Qu C.F.Redmer K.J.Ren A.Rivetti M.Rolo G.Rong Ch.Rosner S.N.Ruan N.Salone A.Sarantsev Y.Schelhaas K.Schoenning M.Scodeggio K.Y.Shan W.Shan X.Y.Shan Z.J.Shang J.F.Shangguan L.G.Shao M.Shao C.P.Shen H.F.Shen W.H.Shen X.Y.Shen B.A.Shi H.Shi H.C.Shi J.L.Shi J.Y.Shi Q.Q.Shi S.Y.Shi X.Shi J.J.Song T.Z.Song W.M.Song Y.J.Song Y.X.Song S.Sosio S.Spataro F.Stieler Y.J.Su G.B.Sun G.X.Sun H.Sun H.K.Sun J.F.Sun K.Sun L.Sun S.S.Sun T.Sun W.Y.Sun Y.Sun Y.J.Sun Y.Z.Sun Z.Q.Sun Z.T.Sun C.J.Tang G.Y.Tang J.Tang M.Tang Y.A.Tang L.Y.Tao Q.T.Tao M.Tat J.X.Teng V.Thoren W.H.Tian Y.Tian Z.F.Tian I.Uman Y.Wan S.J.Wang B.Wang B.L.Wang Bo Wang D.Y.Wang F.Wang H.J.Wang J.J.Wang J.P.Wang K.Wang L.L.Wang M.Wang N.Y.Wang S.Wang S.Wang T.Wang T.J.Wang W.Wang W.Wang W.P.Wang X.Wang X.F.Wang X.J.Wang X.L.Wang X.N.Wang Y.Wang Y.D.Wang Y.F.Wang Y.L.Wang Y.N.Wang Y.Q.Wang Yaqian Wang Yi Wang Z.Wang Z.L.Wang Z.Y.Wang Ziyi Wang D.H.Wei F.Weidner S.P.Wen Y.R.Wen U.Wiedner G.Wilkinson M.Wolke L.Wollenberg C.Wu J.F.Wu L.H.Wu L.J.Wu X.Wu X.H.Wu Y.Wu Y.H.Wu Y.J.Wu Z.Wu L.Xia X.M.Xian B.H.Xiang T.Xiang D.Xiao G.Y.Xiao S.Y.Xiao Y.L.Xiao Z.J.Xiao C.Xie X.H.Xie Y.Xie Y.G.Xie Y.H.Xie Z.P.Xie T.Y.Xing C.F.Xu C.J.Xu G.F.Xu H.Y.Xu M.Xu Q.J.Xu Q.N.Xu W.Xu W.L.Xu X.P.Xu Y.C.Xu Z.P.Xu Z.S.Xu F.Yan L.Yan W.B.Yan W.C.Yan X.Q.Yan H.J.Yang H.L.Yang H.X.Yang Tao Yang Y.Yang Y.F.Yang Y.X.Yang Yifan Yang Z.W.Yang Z.P.Yao M.Ye M.H.Ye J.H.Yin Z.Y.You B.X.Yu C.X.Yu G.Yu J.S.Yu T.Yu X.D.Yu Y.C.Yu C.Z.Yuan J.Yuan J.Yuan L.Yuan S.C.Yuan Y.Yuan Z.Y.Yuan C.X.Yue A.A.Zafar F.R.Zeng S.H.Zeng X.Zeng Y.Zeng Y.J.Zeng Y.J.Zeng X.Y.Zhai Y.C.Zhai Y.H.Zhan A.Q.Zhang B.L.Zhang B.X.Zhang D.H.Zhang G.Y.Zhang H.Zhang H.Zhang H.C.Zhang H.H.Zhang H.H.Zhang H.Q.Zhang H.R.Zhang H.Y.Zhang J.Zhang J.Zhang J.J.Zhang J.L.Zhang J.Q.Zhang J.S.Zhang J.W.Zhang J.X.Zhang J.Y.Zhang J.Z.Zhang Jianyu Zhang L.M.Zhang Lei Zhang P.Zhang Q.Y.Zhang R.Y.Zhang Shuihan Zhang Shulei Zhang X.D.Zhang X.M.Zhang X.Y.Zhang Y.Zhang Y.T.Zhang Y.H.Zhang Y.M.Zhang Yan Zhang Yao Zhang z.d.zhang Z.H.Zhang Z.L.Zhang Z.Y.Zhang Z.Y.Zhang Z.Z.Zhang G.Zhao J.Y.Zhao J.Z.Zhao Lei Zhao Ling Zhao M.G.Zhao N.Zhao R.P.Zhao S.J.Zhao Y.B.Zhao Y.X.Zhao Z.G.Zhao A.Zhemchugov B.Zheng B.M.Zheng J.P.Zheng W.J.Zheng Y.H.Zheng B.Zhong X.Zhong H.Zhou J.Y.Zhou L.P.Zhou S.Zhou X.Zhou X.K.Zhou X.R.Zhou X.Y.Zhou Y.Z.Zhou J.Zhu K.Zhu K.J.Zhu K.S.Zhu L.Zhu L.X.Zhu S.H.Zhu S.Q.Zhu T.J.Zhu W.D.Zhu Y.C.Zhu Z.A.Zhu J.H.Zou J.Zu 《Chinese Physics C》 SCIE CAS CSCD 2024年第9期8-20,共13页
The number ofψ(3686)events collected by the BESⅢdetector during the 2021 run period is determined to be(2259.3±11.1)×10~6 by counting inclusiveψ(3686)hadronic events.The uncertainty is systematic and the ... The number ofψ(3686)events collected by the BESⅢdetector during the 2021 run period is determined to be(2259.3±11.1)×10~6 by counting inclusiveψ(3686)hadronic events.The uncertainty is systematic and the statistical uncertainty is negligible.Meanwhile,the numbers ofψ(3686)events collected during the 2009 and 2012run periods are updated to be(107.7±0.6)×10~6 and(345.4±2.6)×10~6,respectively.Both numbers are consistent with the previous measurements within one standard deviation.The total number ofψ(3686)events in the three data samples is(2712.4±14.3)×10~6. 展开更多
关键词 ψ(3686) inclusive process Hadronic events BESⅢdetector
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Synchronous optimization of strengths, ductility and corrosion resistances of bulk nanocrystalline 304 stainless steel 被引量:4
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作者 S.G.Wang M.Sun +5 位作者 S.Y.Liu X.Liu Y.H.Xu C.B.Gong K.Long z.d.zhang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2020年第2期161-172,共12页
Structural materials usually suffer from several attacks during their service,such as tension,fatigue and corrosion.It is necessary to synchronously improve these properties for their lightweight and longlifetime,but ... Structural materials usually suffer from several attacks during their service,such as tension,fatigue and corrosion.It is necessary to synchronously improve these properties for their lightweight and longlifetime,but corrosion resistance and ductility are generally inverse correlation with strength,it is very difficult to simultaneously optimize all three properties.However,bulk nanocrystalline 304 stainless steel(BN-304SS)produced by severe rolling technology possessed the larger yield and ultimate tensile strengths with sufficient elongation(>40%)during tensile test,the larger saturation stress and longer lifetime during low-cycle fatigue,the enhanced uniform and pitting corrosion resistances during fiveday immersion test in 6 mol/L HCl,the lowered stress corrosion cracking(SCC)susceptibility with larger yield(~2.40 GPa)and ultimate tensile(~2.66 GPa)strengths,and enough elongation(>30%)during stress corrosion in comparison with conventional polycrystalline 304 stainless steel(CP-304 SS)counterpart.The uniform and pitting corrosion resistances of fractured BN-304SS were enhanced in comprsion with those of fractured CP-304 SS during seven-day immersion test in 1 mol/L HCl.These results demonstrated the strengths,ductility and corrosion resistances of BN-304SS can be simultaneously optimized by severe rolling technology.These improved results of BN-304SS in different disciplines were understood by its valence electron configurations rather than traditional microstructural parameters. 展开更多
关键词 STAINLESS steel PITTING CORROSION Stress CORROSION TENSILE properties Low-cycle fatigue Severe rolling technology
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Enhanced localized and uniform corrosion resistances of bulk nanocrystalline 304 stainless steel in high-concentration hydrochloric acid solutions at room temperature 被引量:5
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作者 S.G.Wang M.Sun +2 位作者 Y.H.Xu K.Long z.d.zhang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2018年第12期2498-2506,共9页
The localized and uniform corrosion resistances of bulk nanocrystalline 304 stainless steel(NC-304 SS)produced by severe rolling technique, and its conventional polycrystalline 304 stainless steel(CC-304 SS)counte... The localized and uniform corrosion resistances of bulk nanocrystalline 304 stainless steel(NC-304 SS)produced by severe rolling technique, and its conventional polycrystalline 304 stainless steel(CC-304 SS)counterpart, were investigated in high-concentration hydrochloric acid solutions at room temperature.NC-304 SS can scarcely suffer from localized corrosion in 4 mol/L and 5 mol/L HCl solutions during 5-day immersion tests, and in 1-3 mol/L HCl solutions during thirty-five-day immersion tests. The corrosion rate of NC-304 SS was also less than that of CC-304 SS during these immersion tests. The improved localized and uniform corrosion resistances of NC-304 SS were explained in terms of the adsorption and chemical activity of Cl;on NC-304 SS and CC-304 SS characterized by X-ray photoelectron spectroscopy,and the valence electron configurations of NC-304 SS and CC-304 SS were characterized by ultra-violet photoelectron spectroscopy rather than conventional electrochemical results. 展开更多
关键词 Stainless steels Localized corrosion Severe rolling technique X-ray photoelectron spectroscopy Ultra-violet photoelectron spectroscopy
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Magnetic Properties and Coercivity of MnGa Films Deposited on Different Substrates 被引量:1
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作者 J.N.Feng W.Liu +4 位作者 W.J.Gong X.G.Zhao D.Kim C.J.Choi z.d.zhang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2017年第3期291-294,共4页
MnGa films were grown by magnetron sputtering on thermally oxidized Si(Si/SiO2) and glass substrates. Films grown on single-crystal Si(100) substrate with different underlayers were prepared for comparison. It is ... MnGa films were grown by magnetron sputtering on thermally oxidized Si(Si/SiO2) and glass substrates. Films grown on single-crystal Si(100) substrate with different underlayers were prepared for comparison. It is found that the Si/SiO2 substrate is more suitable for growing high-coercivity MnGa films than the glass substrate, which is the result of the isolated-island-like growth. A coercivity of 9.7 kOe can be achieved for the 10 nm MnGa films grown on Si/SiO2 substrate at substrate temperature TS of 450 °C.Optimized experimental conditions are specified by changing the thickness of the MnGa films and the temperature of the substrates. 展开更多
关键词 Atomic force microscopy Coercivity Magnetic properties Magnetron sputtering Thin film
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Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current
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作者 X.T.Zhao Y.Q.Zhao +4 位作者 W.Liu Z.M.Dai T.T.Wang X.G.Zhao z.d.zhang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2018年第5期832-835,共4页
By inserting an ultrathin Pt layer at Co/Ru interface,we established antiferromagnetic coupling with outof-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering.To achieve configuration suitable for fre... By inserting an ultrathin Pt layer at Co/Ru interface,we established antiferromagnetic coupling with outof-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering.To achieve configuration suitable for free layer,the magnetic properties of the stacks have been investigated by changing the thickness of Co,Ru and Pt layers using an orthogonal wedges technique.It is found that magnetic properties for upper Co layer thinner than 0.5 nm are sensitive to little change in Ru thickness.Improving continuity of upper Co layer by slightly increasing the thickness can effectively increase the squareness of minor loop.The switching magnetization of synthetic antiferromagnetic(SAF) structure is achieved by DC current under an in-plane static magnetic field of ± 500 Oe.This structure is very promising for free layer in spintronic application. 展开更多
关键词 Magnetic materials Multilayer structure WEDGE Exchange coupling ANTIFERROMAGNETIC
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Magnetic and Transport Properties of Mn_(0.98)Cr_(0.02)Te Epitaxial Films Grown on Al_2O_3 Substrates
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作者 Z.H.Wang D.Y.Geng +2 位作者 J.Li Y.B.Li z.d.zhang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2014年第2期103-106,共4页
The epitaxial Mno0.98Cr0.02Te films on single crystal Al2O3 (0001) substrates were prepared by pulsed laser deposition. The X-ray diffraction and scanning electron microscopy results showed that the good continuous ... The epitaxial Mno0.98Cr0.02Te films on single crystal Al2O3 (0001) substrates were prepared by pulsed laser deposition. The X-ray diffraction and scanning electron microscopy results showed that the good continuous epitaxial film was obtained with substrate temperature of 500 ℃. When the substrate temperature reached 700 ℃, the film was island growth and the manganese oxides phase appeared. The temperature dependence of both the magnetization and electrical resistance showed a sharp rise at around 60 K due to the magnetoelastic coupling. The temperature dependence of the electrical resistance of Mno0.98Cr0.02Te provided evidence for a transition from the metallic to semiconducting state at 305 K due to the spin disorder scattering with a large contribution from the influence of magnon drag. 展开更多
关键词 Magnetic properties Mno0.98Cr0.02Te films X-ray diffraction Epitaxial film
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A new scale for optimized cryogenic magnetocaloric effect in ErAl_2@Al_2O_3 nanocapsules
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作者 F.Wei S.Ma +6 位作者 L.Yang Y.Feng J.Z.Wang A.Hua X.G.Zhao D.Y.Geng z.d.zhang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2018年第5期848-854,共7页
The Er Al2@Al2O3 nanocapsules with Er Al2core and Al2O3 shell were synthesized by modified arc-charge technique.The typical core-shell structure of the nanocapsules was confirmed by high resolution transmission electr... The Er Al2@Al2O3 nanocapsules with Er Al2core and Al2O3 shell were synthesized by modified arc-charge technique.The typical core-shell structure of the nanocapsules was confirmed by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy.Transmission electron microscopy analysis shows the irregular sphere of the nanocapules with an average diameter of 26 nm.Magnetic investigation revealed the Curie temperature of Er Al2@Al2O3 nanocapsules at 20 K and the typical superparamagnetic behavior between blocking temperature and Curie temperature.Based on the blocking temperature and average diameter,the magnetocrystalline anisotropy constant of Er Al2@Al2O3nanocapsules was estimated to illustrate the magnetic contribution to the-SM.The large-SMof 14.25 J/(kg K)was obtained under 50 k Oe at 5 K.A vital parameter β was introduced in the present work to scale the optimized magnetic characteristics and the optimized mechanism was discussed in detail according to classical superparamagnetic theory.The results demonstrate that the optimal-SMwill be obtained when the magnetic parameter β is close to the theoretical coefficient. 展开更多
关键词 NANOCAPSULES Magnetocaloric effect Superparamagnetic property Cryogenic refrigeration
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Structure and topological transport in Pb-doping topological crystalline insulator SnTe(001)film
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作者 C.H.Yan F.Wei +5 位作者 Y.Bai F.Wang A.Q.Zhang S.Ma W.Liu z.d.zhang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2020年第9期223-228,共6页
Topological crystalline insulator(TCI)as a new type of topological materials has attracted extensive research interests for its tunable topological properties.Due its symmetry topological protection essence,the struct... Topological crystalline insulator(TCI)as a new type of topological materials has attracted extensive research interests for its tunable topological properties.Due its symmetry topological protection essence,the structure investigation provides a solid basement for tuning its topological transport properties.On SrTiO3(111)substrate,the SnTe film was found to be epitaxial growth only along[001]while not[111]direction.The detailed structural study was performed and a structural model was proposed to elucidate epitaxial growth of the SnTe(001)film.The transport properties of SnTe(001)film were further investigated and a typical weak anti-localization effect was observed.By Pb-doping into SnTe,the bulk carriers were inhibited and its topological surface states were strengthened to induce the enhanced surface transport contribution.With tunable multiple transport channels from the even Dirac cones,the TCI SnTe film systems will have the potential application in future spintronics devices. 展开更多
关键词 Topological crystalline insulator Surface state SnTe
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