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NONDESTRUCTIVE BAND-GAP PROFILE DETERMINATION OF HgCdTe LPE GROWN LAYERS 被引量:1
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作者 z.f.ivasiv F.F.Sizov 等 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2002年第2期81-86,共6页
Infrared transmission and photoconductivity spectra of mercury cadmium telluride (MCT) epitaxial layers, grown by liquid phase epitaxy (LPE) on CdTe and CdZnTe wide band gap substrates, were investigated both theoreti... Infrared transmission and photoconductivity spectra of mercury cadmium telluride (MCT) epitaxial layers, grown by liquid phase epitaxy (LPE) on CdTe and CdZnTe wide band gap substrates, were investigated both theoretically and experimentally at temperatures T =82 K and T =300 K in the infrared (IR) wavelength region 3 15 μm. The photoresponse position of the diodes was determined at cryogenic temperatures from the transmission spectra of room temperature. Theoretical calculations of optical density D(h-ω), needed for analysis of experimental optical transmission data, were performed in the framework of WKB approximation. 展开更多
关键词 HGCDTE 汞镉碲化合物 外延生长 红外探测 LPE 液相外延
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