A Cr film with a 75 nm thickness sputtered on a Si substrate was used to fabricate microbridge and microcantilever samples with the MEMS （microelectromechanical system） technique. The profile of the buckled beams wa...A Cr film with a 75 nm thickness sputtered on a Si substrate was used to fabricate microbridge and microcantilever samples with the MEMS （microelectromechanical system） technique. The profile of the buckled beams was measured by using the interference technique with white light and fitted with a theoretical result. The uniform residual strain in the bridge samples was deduced from the variation of buckling amplitude with the beam length. On the other hand, the gradient residual strain was determined from the deflection profile of the cantilever. The residual uniform and gradient strain in the Cr film are about 4.96×10^-3 and 4.2967×10^-5, respectively.展开更多
基金supported by the National Natural Sci-ence Foundation of China (No. 10402023)
文摘A Cr film with a 75 nm thickness sputtered on a Si substrate was used to fabricate microbridge and microcantilever samples with the MEMS （microelectromechanical system） technique. The profile of the buckled beams was measured by using the interference technique with white light and fitted with a theoretical result. The uniform residual strain in the bridge samples was deduced from the variation of buckling amplitude with the beam length. On the other hand, the gradient residual strain was determined from the deflection profile of the cantilever. The residual uniform and gradient strain in the Cr film are about 4.96×10^-3 and 4.2967×10^-5, respectively.
