The effects of 100 keV H-ion implantation on the structure of LiTaO3 crystal are investigated by Raman and UV/VIS/NIR spectroscopies.The implantation fluence is in the range from 1.0 × 10^(13) to 1.0 × 10^(1...The effects of 100 keV H-ion implantation on the structure of LiTaO3 crystal are investigated by Raman and UV/VIS/NIR spectroscopies.The implantation fluence is in the range from 1.0 × 10^(13) to 1.0 × 10^(17) H^(+)/cm^(2).The experimental results show the dependence of the crystal structure on ion fluence.It is found that the structural modification of the LiTaO3 crystal is due to two processes.One is H-ions occupying lithium vacancies (VLi),which is predominant at a fluence less than 1.0 × 10^(14) H^(+) /cm^(2).This process causes the reduction of negative charge centers in the crystal and relaxation of distortion in the local lattice structure.The other is the influence of defects created during implantation,which plays a dominant role gradually in the structural modification at a fluence larger than 1.0 × 10^(15) H^(+)/cm^(2).展开更多
<正>Crystalline SiO2(c-SiO2) samples were firstly implanted at room temperature (RT) with 120 keV Cions and then irradiated at RT with 950 MeV Pb ions. The C-ion irradiation experiments were performed on the 200...<正>Crystalline SiO2(c-SiO2) samples were firstly implanted at room temperature (RT) with 120 keV Cions and then irradiated at RT with 950 MeV Pb ions. The C-ion irradiation experiments were performed on the 200 kV heavy ion implanter of IMP and the selected implantation doses are 2. 0×1017 , 5. 0×1017, 8. 6×1017 and 1. 2×1017C/cm2. The Pb ion irradiation was carried out at the IRASME (CIRIL-GANIL, Caen) and the irradiation fluencies are 5.0×1011,1. 0×1012 and 1..0×1012 Pb/cm2 , respectively. The chemical bonds formation in the samples was investigated by using a Spectrum GX IR spectroscopy.展开更多
With the decrease of the device size,soft error induced by various particles becomes a serious problem for advanced CMOS technologies.In this paper,we review the evolution of two main aspects of soft error-SEU and SET...With the decrease of the device size,soft error induced by various particles becomes a serious problem for advanced CMOS technologies.In this paper,we review the evolution of two main aspects of soft error-SEU and SET,including the new mechanisms to induced SEUs,the advances of the MCUs and some newly observed phenomena of the SETs.The mechanisms and the trends with downscaling of these issues are briefly discussed.We also review the hardening strategies for different types of soft errors from different perspective and present the challenges in testing,modeling and hardening assurance of soft error issues we have to address in the future.展开更多
Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the sam- ples were characterized by X-ray diffractometer, X-...Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the sam- ples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400℃, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photolumines- cence spectra, and the origin of blue emission was investigated.展开更多
The study presents an investigation into the proton-induced current transient in a silicon-germanium heterojunction bipolar transistor(SiGe HBT).The temporal information of the proton-induced current transients is fir...The study presents an investigation into the proton-induced current transient in a silicon-germanium heterojunction bipolar transistor(SiGe HBT).The temporal information of the proton-induced current transients is first measured and then compared with results from heavy ion microbeam experiment.Additionally,a model for proton-induced charge collection based on Geant4 Monte Carlo simulation tools is constructed by using the information from heavy ion experiment and 3D TCAD simulation.The results obtained by the validated model exhibit good consistency with the proton experiment.展开更多
The structural stability of C60 films under the bombardment of 1.95 GeV Kr ions is investigated.The irradiated C60 films were analyzed by Fourier Transform Infrared(FTIR) spectroscopy and Raman scattering technique.Th...The structural stability of C60 films under the bombardment of 1.95 GeV Kr ions is investigated.The irradiated C60 films were analyzed by Fourier Transform Infrared(FTIR) spectroscopy and Raman scattering technique.The analytical results indicate that the irradiation induced a decrease of icosahedral symmetry of C60 molecule and damage of C60 films;different vibration modes of C60 molecule have different irradiation sensitivities;the mean efficient damage radius obtained from experimental data is about 1.47 nm,which is in good agreement with thermal spike model prediction.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2010CB832902the National Natural Science Foundation of China(10835010)the Chinese Academy of Sciences.
文摘The effects of 100 keV H-ion implantation on the structure of LiTaO3 crystal are investigated by Raman and UV/VIS/NIR spectroscopies.The implantation fluence is in the range from 1.0 × 10^(13) to 1.0 × 10^(17) H^(+)/cm^(2).The experimental results show the dependence of the crystal structure on ion fluence.It is found that the structural modification of the LiTaO3 crystal is due to two processes.One is H-ions occupying lithium vacancies (VLi),which is predominant at a fluence less than 1.0 × 10^(14) H^(+) /cm^(2).This process causes the reduction of negative charge centers in the crystal and relaxation of distortion in the local lattice structure.The other is the influence of defects created during implantation,which plays a dominant role gradually in the structural modification at a fluence larger than 1.0 × 10^(15) H^(+)/cm^(2).
基金Supported by National Natural Science Foundation of China （10125522,10475102）.
文摘<正>Crystalline SiO2(c-SiO2) samples were firstly implanted at room temperature (RT) with 120 keV Cions and then irradiated at RT with 950 MeV Pb ions. The C-ion irradiation experiments were performed on the 200 kV heavy ion implanter of IMP and the selected implantation doses are 2. 0×1017 , 5. 0×1017, 8. 6×1017 and 1. 2×1017C/cm2. The Pb ion irradiation was carried out at the IRASME (CIRIL-GANIL, Caen) and the irradiation fluencies are 5.0×1011,1. 0×1012 and 1..0×1012 Pb/cm2 , respectively. The chemical bonds formation in the samples was investigated by using a Spectrum GX IR spectroscopy.
基金supported by the National Natural Science Foundation of China(Grant No.11175138)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20100201110018)+1 种基金the Key Program of the National Natural Science Foundation of China(Grant No.11235008)the State Key Laboratory Program(Grant No.20140134)
文摘With the decrease of the device size,soft error induced by various particles becomes a serious problem for advanced CMOS technologies.In this paper,we review the evolution of two main aspects of soft error-SEU and SET,including the new mechanisms to induced SEUs,the advances of the MCUs and some newly observed phenomena of the SETs.The mechanisms and the trends with downscaling of these issues are briefly discussed.We also review the hardening strategies for different types of soft errors from different perspective and present the challenges in testing,modeling and hardening assurance of soft error issues we have to address in the future.
基金Supported by the National Science Fund for Distinguished Young Scholars (Grant No. 10125522)the National Natural Science Foundation of China (Grant No. 10475102)the "Xi-Bu-Zhi-Guang" Program of the Chinese Academy of Sciences
文摘Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the sam- ples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400℃, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photolumines- cence spectra, and the origin of blue emission was investigated.
基金supported by the National Natural Science Foundation of China(Grant Nos.11775167,61574171 and 11575138)。
文摘The study presents an investigation into the proton-induced current transient in a silicon-germanium heterojunction bipolar transistor(SiGe HBT).The temporal information of the proton-induced current transients is first measured and then compared with results from heavy ion microbeam experiment.Additionally,a model for proton-induced charge collection based on Geant4 Monte Carlo simulation tools is constructed by using the information from heavy ion experiment and 3D TCAD simulation.The results obtained by the validated model exhibit good consistency with the proton experiment.
基金supported by the National Natural Science Foundation of China (10835010,10675150,10175084)the National Basic Research Program of China (2010CB832902)
文摘The structural stability of C60 films under the bombardment of 1.95 GeV Kr ions is investigated.The irradiated C60 films were analyzed by Fourier Transform Infrared(FTIR) spectroscopy and Raman scattering technique.The analytical results indicate that the irradiation induced a decrease of icosahedral symmetry of C60 molecule and damage of C60 films;different vibration modes of C60 molecule have different irradiation sensitivities;the mean efficient damage radius obtained from experimental data is about 1.47 nm,which is in good agreement with thermal spike model prediction.
