Aiming at the influences of poor contact at carbon nanotube (CNT)/electrode interface on luminescence stability in printed CNT film, a new co-sintering process for cathode fabrication was presented to improve the lumi...Aiming at the influences of poor contact at carbon nanotube (CNT)/electrode interface on luminescence stability in printed CNT film, a new co-sintering process for cathode fabrication was presented to improve the luminescent stability of fully printed CNT-FED. By co-sintering the printed silver and CNT layers, CNTs geometrically matched with Ag surface and/or embedded into Ag layer at the bottom of the co-sintered film, large CNTs block and bulk silver nested each other at the top of the co-sintered film. All these structures increased the contact area at CNT/Ag interface, which could increase the probability of forming ohmic contact at CNT/Ag interface. The luminescent stability of printed CNT-FED with co-sintered cathode could be improved as 5.6 times high as that of common devices.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.60036010)the National High Technology Research and Development Program of China(Grant No.2001AA313090)the Doctoral Foundation of the National Education Administration of P.R.China(Grant No.20020698014).
文摘Aiming at the influences of poor contact at carbon nanotube (CNT)/electrode interface on luminescence stability in printed CNT film, a new co-sintering process for cathode fabrication was presented to improve the luminescent stability of fully printed CNT-FED. By co-sintering the printed silver and CNT layers, CNTs geometrically matched with Ag surface and/or embedded into Ag layer at the bottom of the co-sintered film, large CNTs block and bulk silver nested each other at the top of the co-sintered film. All these structures increased the contact area at CNT/Ag interface, which could increase the probability of forming ohmic contact at CNT/Ag interface. The luminescent stability of printed CNT-FED with co-sintered cathode could be improved as 5.6 times high as that of common devices.
